Inventor · disambiguated record
Yi-Tang Lin
Also filed as: LIN YI-TANG
64 granted patents·4 pending applications·1,664 citations·filing 2010–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD34TAIWAN SEMICONDUCTOR MFG15WANN CLEMENT HSINGJEN4WANG CHIEN-HSUN3CHANG CHIH-SHENG2
Top patents by PatentIndex Score
68 records- 0198US8816444B2System and methods for converting planar design to FinFET designWANN CLEMENT HSINGJEN·Filed 2012·Granted Aug 26, 2014·1.3k cites·20 claims
- 0296US9553025B2Selective Fin-shaping processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 24, 2017·14 cites·20 claims
- 0395US9368594B2Method of forming a fin-like BJTTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Jun 14, 2016·11 cites·20 claims
- 0495US9324866B2Structure and method for transistor with line end extensionYU SHAO-MING·Filed 2012·Granted Apr 26, 2016·30 cites·15 claims
- 0595US8946829B2Selective fin-shaping process using plasma doping and etching for 3-dimensional transistor applicationsWANN CLEMENT HSINGJEN·Filed 2011·Granted Feb 3, 2015·17 cites·12 claims
- 0695US8875076B2System and methods for converting planar design to FinFET designTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Oct 28, 2014·35 cites·20 claims
- 0794US8881066B2Mandrel modification for achieving single fin fin-like field effect transistor (FinFET) deviceSHIEH MING-FENG·Filed 2011·Granted Nov 4, 2014·21 cites·20 claims
- 0894US8525267B2Device and method for forming Fins in integrated circuitryWANG CHIEN-HSUN·Filed 2010·Granted Sep 3, 2013·22 cites·17 claims
- 0993US9929133B2Semiconductor logic circuits fabricated using multi-layer structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Mar 27, 2018·14 cites·20 claims
- 1093US9202788B2Multi-layer semiconductor device structureTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Dec 1, 2015·12 cites·17 claims
- 1193US8759184B2FinFETs and the methods for forming the sameHO CHIA-CHENG·Filed 2012·Granted Jun 24, 2014·17 cites·20 claims
- 1293US8609499B2FinFETs and the methods for forming the sameHO CHIA-CHENG·Filed 2012·Granted Dec 17, 2013·18 cites·8 claims
- 1391US9035426B2Fin-like BJTCHANG CHIH-SHENG·Filed 2011·Granted May 19, 2015·11 cites·20 claims
- 1491US8806397B2Method and device for increasing fin device density for unaligned finsTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Aug 12, 2014·5 cites·20 claims
- 1591US8633076B2Method for adjusting fin width in integrated circuitryWANG CHIEN-HSUN·Filed 2010·Granted Jan 21, 2014·14 cites·20 claims
- 1690US8963257B2Fin field effect transistors and methods for fabricating the sameWANN CLEMENT HSINGJEN·Filed 2011·Granted Feb 24, 2015·8 cites·20 claims
- 1789US9953975B2Methods for forming STI regions in integrated circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Apr 24, 2018·11 cites·20 claims
- 1889US9029958B2FinFETs and the methods for forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted May 12, 2015·9 cites·20 claims
- 1989US8799833B2System and methods for converting planar design to FinFET designWANN CLEMENT HSINGJEN·Filed 2012·Granted Aug 5, 2014·12 cites·19 claims
- 2089US8726220B2System and methods for converting planar design to FinFET designLIN YI-TANG·Filed 2012·Granted May 13, 2014·21 cites·20 claims
- 2186US10062601B2Systems and methods for a semiconductor structure having multiple semiconductor-device layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 28, 2018·3 cites·20 claims
- 2284US8621406B2System and methods for converting planar design to FinFET designLEI CHEOK-KEI·Filed 2012·Granted Dec 31, 2013·13 cites·20 claims
- 2383US12218239B2Structure and method for providing line end extensions for fin-type active regionsMOSAID TECH INCORPORATED·Filed 2023·Granted Feb 4, 2025·0 cites·16 claims
- 2482US9917192B2Structure and method for transistors with line end extensionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Mar 13, 2018·3 cites·19 claims
- 2581US9673328B2Structure and method for providing line end extensions for fin-type active regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jun 6, 2017·4 cites·17 claims
- 2681US9379217B2FinFETs and the methods for forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jun 28, 2016·4 cites·19 claims
- 2780US11784183B2Inter-level connection for multi-layer structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 10, 2023·0 cites·20 claims
- 2880US11239365B2Structure and method for providing line end extensions for fin-type active regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 1, 2022·1 cites·20 claims
- 2980US9634001B2System and methods for converting planar design to FinFET designTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Apr 25, 2017·4 cites·20 claims
- 3080US9472672B2Eliminating fin mismatch using isolation lastTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Oct 18, 2016·5 cites·20 claims
- 3179US11721761B2Structure and method for providing line end extensions for fin-type active regionsMOSAID TECHNOLOGIES INC·Filed 2022·Granted Aug 8, 2023·0 cites·21 claims
- 3279US9893056B2Multi-layer semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 13, 2018·2 cites·20 claims
- 3379US9646872B2Systems and methods for a semiconductor structure having multiple semiconductor-device layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted May 9, 2017·3 cites·20 claims
- 3477US10573751B2Structure and method for providing line end extensions for fin-type active regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Feb 25, 2020·1 cites·19 claims
- 3577US10515846B2Systems and methods for a semiconductor structure having multiple semiconductor-device layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 24, 2019·1 cites·20 claims
- 3677US2025220951A1Structure and method for providing line end extension for fin-type regionsMOSAID TECH INCORPORATED·Filed 2025·Application pending·0 cites
- 3775US8769446B2Method and device for increasing fin device density for unaligned finsWANG CHIEN-HSUN·Filed 2011·Granted Jul 1, 2014·3 cites·20 claims
- 3873US11532612B2Inter-level connection for multi-layer structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 20, 2022·0 cites·20 claims
- 3973US10128269B2Systems and methods for a semiconductor structure having multiple semiconductor-device layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Nov 13, 2018·2 cites·20 claims
- 4073US9209201B2Systems and methods for integrating different channel materials into a CMOS circuit by using a semiconductor structure having multiple transistor layersTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Dec 8, 2015·2 cites·21 claims
- 4171US9911850B2FinFETs and the methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Mar 6, 2018·1 cites·20 claims
- 4271US9773809B2Systems and methods for a semiconductor structure having multiple semiconductor-device layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 26, 2017·1 cites·20 claims
- 4371US9064797B2Systems and methods for dopant activation using pre-amorphization implantation and microwave radiationTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jun 23, 2015·2 cites·19 claims
- 4471US8906710B2Monitor test key of epi profileCHANG CHIH-SHENG·Filed 2011·Granted Dec 9, 2014·2 cites·19 claims
- 4570US12087777B2Systems and methods for a semiconductor structure having multiple semiconductor-device layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 10, 2024·0 cites·20 claims
- 4670US9443869B2Systems and methods for a semiconductor structure having multiple semiconductor-device layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Sep 13, 2016·2 cites·20 claims
- 4767US9472550B2Adjusted fin width in integrated circuitryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Oct 18, 2016·2 cites·6 claims
- 4866US10916469B2Systems and methods for a semiconductor structure having multiple semiconductor-device layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 9, 2021·0 cites·20 claims
- 4962US9123546B2Multi-layer semiconductor device structures with different channel materialsTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Sep 1, 2015·1 cites·20 claims
- 5061US10879235B2Inter-level connection for multi-layer structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 29, 2020·0 cites·20 claims
Showing the top 50 of 68 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →