Inventor · disambiguated record

Yi-Hsiung Lin

Also filed as: LIN YI-HSIUNG · LIN YI-HSIUNG S

63 granted patents·21 pending applications·252 citations·filing 1999–2025

98Inventor score

Technology areasH10W H10P H10D H01L F24F

Files withTAIWAN SEMICONDUCTOR MFG CO LTD57 LIN YI HSIUNG8 IBM6 SAMSUNG ELECTRONICS CO LTD2 UNITED MICROELECTRONICS CORP2

Top patents by PatentIndex Score

84 records

0196US9691695B2Monolithic 3D integration inter-tier vias insertion scheme and associated layout structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jun 27, 2017·13 cites·20 claims
0295US11682590B2Methods of forming contact features in field-effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 20, 2023·2 cites·20 claims
0394US11004855B2Buried metal track and methods forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 11, 2021·7 cites·20 claims
0494US10170404B2Monolithic 3D integration inter-tier vias insertion scheme and associated layout structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 1, 2019·8 cites·20 claims
0594US9564363B1Method of forming butted contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 7, 2017·12 cites·20 claims
0693US10672665B2Fin field effect transistor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 2, 2020·6 cites·20 claims
0793US10446555B2Buried metal track and methods forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 15, 2019·7 cites·20 claims
0891US11393815B2Transistors with varying width nanosheetTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 19, 2022·5 cites·20 claims
0991US10734321B2Integrated circuit and method of manufacturing sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 4, 2020·6 cites·20 claims
1089US11127631B2Semiconductor device with contact structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 21, 2021·4 cites·20 claims
1189US10763365B2Metal rail conductors for non-planar semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 1, 2020·3 cites·20 claims
1288US11264204B2Implanter calibrationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 1, 2022·2 cites·20 claims
1388US10763198B2Monolithic 3D integration inter-tier vias insertion scheme and associated layout structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 1, 2020·3 cites·20 claims
1488US10504775B1Methods of forming metal layer structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 10, 2019·4 cites·20 claims
1588US9892224B2Method of forming masksTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 13, 2018·5 cites·20 claims
1688US7815173B2CoolerLIN YI-HSIUNG·Filed 2008·Granted Oct 19, 2010·16 cites·3 claims
1788US6593185B1Method of forming embedded capacitor structure applied to logic integrated circuitUNITED MICROELECTRONICS CORP·Filed 2002·Granted Jul 15, 2003·45 cites·6 claims
1888US2025316584A1Interconnect structure and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1985US11495687B2Metal rail conductors for non-planar semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 8, 2022·1 cites·20 claims
2085US2025293089A1Semiconductor device with contact structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2184US12113066B2Integrated circuit device including a power supply line and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 8, 2024·0 cites·20 claims
2284US10818473B2Implanter calibrationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 27, 2020·3 cites·20 claims
2384US7560222B2Si-containing polymers for nano-pattern device fabricationIBM·Filed 2006·Granted Jul 14, 2009·7 cites·1 claims
2483US11404320B2Fin field effect transistor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 2, 2022·1 cites·20 claims
2583US2024371868A1Buried metal track and methods forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2683US2025324558A1Finfet sram cells with reduced fin pitchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2783US2024387530A1Integrated circuit device including a power supply line and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2882US12327765B2Semiconductor device with contact structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 10, 2025·0 cites·20 claims
2982US12107012B2Method for forming fin field effect transistor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 1, 2024·0 cites·20 claims
3082US2025241052A1Methods of forming contact features in field-effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3181US12272605B2Methods of forming contact features in field-effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 8, 2025·0 cites·20 claims
3281US10727113B2Methods of forming metal layer structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 28, 2020·2 cites·20 claims
3381US2025285980A1Integrated circuit and method of manufacturing sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3480US7488687B2Methods of forming electrical interconnect structures using polymer residues to increase etching selectivity through dielectric layersSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Feb 10, 2009·7 cites·20 claims
3579US11791215B2Fin field effect transistor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 17, 2023·0 cites·20 claims
3678US10134863B2Vertical semiconductor device structure and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 20, 2018·3 cites·20 claims
3778US6750129B2Process for forming fusible linksINFINEON TECHNOLOGIES AG·Filed 2002·Granted Jun 15, 2004·27 cites·27 claims
3877US12400950B2Interconnect structure and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 26, 2025·0 cites·20 claims
3977US7553758B2Method of fabricating interconnections of microelectronic device using dual damascene processSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jun 30, 2009·7 cites·17 claims
4076US11081403B2Methods of forming contact features in field-effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 3, 2021·1 cites·20 claims
4176US11063041B2Integrated circuit device including a power supply line and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 13, 2021·1 cites·20 claims
4276US2024379854A1Metal Rail Conductors For Non-Planar Semiconductor DevicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
4375US12363879B2FinFET SRAM cells with reduced fin pitchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 15, 2025·0 cites·20 claims
4475US11694927B2Formation method of semiconductor device with contact structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 4, 2023·0 cites·20 claims
4574US12113132B2Metal rail conductors for non-planar semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 8, 2024·0 cites·20 claims
4674US11848327B2Integrated circuit device including a power supply line and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 19, 2023·0 cites·20 claims
4773US12125850B2Buried metal track and methods forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 22, 2024·0 cites·20 claims
4873US11557532B2Monolithic 3D integration inter-tier vias insertion scheme and associated layout structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 17, 2023·0 cites·20 claims
4969US10879176B2Integrated circuit structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 29, 2020·1 cites·20 claims
5068US11508661B2Integrated circuit and method of manufacturing sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 22, 2022·0 cites·20 claims

Showing the top 50 of 84 patent records by PatentIndex Score.

Join the waitlist — get patent alerts

Get an alert when Yi-Hsiung Lin files or is granted a new patent.

We store only your email — no account needed. See our privacy policy.

Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →