Inventor · disambiguated record
Yi Tang
Also filed as: TANG YI · Tang yi zhou
26 granted patents·19 pending applications·18 citations·filing 2013–2025
92Inventor score
Files withCHANGXIN MEMORY TECH INC26INFINEON TECHNOLOGIES AMERICAS CORP10CXMT CORP5INT RECTIFIER CORP2CHONGQING ALPHA AND OMEGA SEMICONDUCTOR LTD1
Top patents by PatentIndex Score
45 records- 0184US9859407B2IGBT having deep gate trenchINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2016·Granted Jan 2, 2018·3 cites·20 claims
- 0284US9245985B2IGBT with buried emitter electrodeINT RECTIFIER CORP·Filed 2013·Granted Jan 26, 2016·5 cites·9 claims
- 0381US9299819B2Deep gate trench IGBTINT RECTIFIER CORP·Filed 2013·Granted Mar 29, 2016·4 cites·13 claims
- 0480US9496378B2IGBT with buried emitter electrodeINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2016·Granted Nov 15, 2016·2 cites·19 claims
- 0577US9871128B2Bipolar semiconductor device with sub-cathode enhancement regionsINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2016·Granted Jan 16, 2018·3 cites·18 claims
- 0669US2025324573A1Semiconductor device and manufacturing method thereforCXMT CORP·Filed 2025·Application pending·0 cites
- 0766US2025275125A1Semiconductor structure and method for forming sameCXMT CORP·Filed 2025·Application pending·0 cites
- 0865US2025071976A1Semiconductor structures and their formation methodsCXMT CORP·Filed 2024·Application pending·0 cites
- 0965US2025071974A1Semiconductor structure and method for manufacturing semiconductor structureCXMT CORP·Filed 2024·Application pending·0 cites
- 1064US12495537B2Method for manufacturing semiconductor structure, semiconductor structure and semiconductor memoryCHANGXIN MEMORY TECH INC·Filed 2022·Granted Dec 9, 2025·0 cites·18 claims
- 1164US12389588B2Memory and forming method thereofCHANGXIN MEMORY TECH INC·Filed 2022·Granted Aug 12, 2025·0 cites·5 claims
- 1264US12336167B2Memory and forming method thereofCHANGXIN MEMORY TECH INC·Filed 2022·Granted Jun 17, 2025·0 cites·10 claims
- 1363US10164078B2Bipolar semiconductor device with multi-trench enhancement regionsINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2016·Granted Dec 25, 2018·1 cites·18 claims
- 1462US12419028B2Semiconductor structure and method for forming sameCHANGXIN MEMORY TECH INC·Filed 2022·Granted Sep 16, 2025·0 cites·20 claims
- 1562US12402300B2Semiconductor device having channel regions distributed on two opposite sides of a gate electrodeCHANGXIN MEMORY TECH INC·Filed 2022·Granted Aug 26, 2025·0 cites·9 claims
- 1661US12513890B2Memory structure and manufacturing method thereof, and semiconductor structureCHANGXIN MEMORY TECH INC·Filed 2022·Granted Dec 30, 2025·0 cites·14 claims
- 1761US12419038B2Semiconductor structure, method for forming same, and layout structureCHANGXIN MEMORY TECH INC·Filed 2022·Granted Sep 16, 2025·0 cites·20 claims
- 1858US12426328B2Semiconductor structure and manufacturing method thereofCHANGXIN MEMORY TECH INC·Filed 2022·Granted Sep 23, 2025·0 cites·12 claims
- 1958US2024057308A1Semiconductor structure and method for forming sameCHANGXIN MEMORY TECH INC·Filed 2023·Application pending·0 cites
- 2058US2024145545A1Semiconductor structure and method for manufacturing the sameCHANGXIN MEMORY TECH INC·Filed 2023·Application pending·0 cites
- 2157US2024188286A1Method for manufacturing semiconductor structure and semiconductor structureCHANGXIN MEMORY TECH INC·Filed 2023·Application pending·0 cites
- 2257US2024090191A1Method for fabricating semiconductor structure and semiconductor structureCHANGXIN MEMORY TECH INC·Filed 2023·Application pending·0 cites
- 2356US12419033B2Semiconductor structure and manufacturing method thereofCHANGXIN MEMORY TECH INC·Filed 2022·Granted Sep 16, 2025·0 cites·9 claims
- 2456US12336168B2Method of manufacturing semiconductor structure and semiconductor structureCHANGXIN MEMORY TECH INC·Filed 2022·Granted Jun 17, 2025·0 cites·15 claims
- 2556US2024170324A1Method of fabrication for a semiconductor structureCHANGXIN MEMORY TECH INC·Filed 2023·Application pending·0 cites
- 2656US2023422468A1Method for preparing semiconductor structure, semiconductor structure and semiconductor memoryCHANGXIN MEMORY TECH INC·Filed 2023·Application pending·0 cites
- 2755US12490421B2Method of manufacturing semiconductor structure and semiconductor structureCHANGXIN MEMORY TECH INC·Filed 2022·Granted Dec 2, 2025·0 cites·9 claims
- 2855US12426240B2Semiconductor structure with a plurality of connection linesCHANGXIN MEMORY TECH INC·Filed 2022·Granted Sep 23, 2025·0 cites·15 claims
- 2955US12176213B2Semiconductor structure and manufacturing method using different ion implantation energyCHANGXIN MEMORY TECH INC·Filed 2022·Granted Dec 24, 2024·0 cites·15 claims
- 3054US2023010642A1Semiconductor structure and method for manufacturing sameCHANGXIN MEMORY TECH INC·Filed 2022·Application pending·0 cites
- 3153US12396156B2Memory structure and manufacturing method thereof, and semiconductor structureCHANGXIN MEMORY TECH INC·Filed 2022·Granted Aug 19, 2025·0 cites·15 claims
- 3253US2023369051A1Fabrication method and structure of semiconductor deviceCHANGXIN MEMORY TECH INC·Filed 2022·Application pending·0 cites
- 3353US2023013420A1Semiconductor structure and fabrication method thereofCHANGXIN MEMORY TECH INC·Filed 2022·Application pending·0 cites
- 3452US10115812B2Semiconductor device having a superjunction structureINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2017·Granted Oct 30, 2018·0 cites·21 claims
- 3552US2024047580A1Semiconductor structure and method for manufacturing sameCHANGXIN MEMORY TECH INC·Filed 2023·Application pending·0 cites
- 3651US2025071997A1Semiconductor structure and method for forming sameCXMT CORP·Filed 2024·Application pending·0 cites
- 3750US9799725B2IGBT having a deep superjunction structureINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2015·Granted Oct 24, 2017·0 cites·21 claims
- 3850US9685506B2IGBT having an inter-trench superjunction structureINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2015·Granted Jun 20, 2017·0 cites·20 claims
- 3950US2023389273A1Semiconductor structureCHANGXIN MEMORY TECH INC·Filed 2022·Application pending·0 cites
- 4049US2024063256A1Semiconductor device and method for fabricating sameCHANGXIN MEMORY TECH INC·Filed 2023·Application pending·0 cites
- 4148US9768284B2Bipolar semiconductor device having a charge-balanced inter-trench structureINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2015·Granted Sep 19, 2017·0 cites·14 claims
- 4244US11017979B2Method of ion implantation and an apparatus for the sameSHANGHAI HUALI MICROELECT CORP·Filed 2019·Granted May 25, 2021·0 cites·15 claims
- 4343US2025275177A1High-voltage-withstanding super junction termination structureCHONGQING ALPHA AND OMEGA SEMICONDUCTOR LTD·Filed 2025·Application pending·0 cites
- 4442US9831330B2Bipolar semiconductor device having a deep charge-balanced structureINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2015·Granted Nov 28, 2017·0 cites·10 claims
- 4534US2017271445A1Bipolar Semiconductor Device Having Localized Enhancement RegionsINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2016·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →