Inventor · disambiguated record
Yider Wu
Also filed as: WU YIDER
60 granted patents·13 pending applications·1,586 citations·filing 2000–2012
99Inventor score
Files withADVANCED MICRO DEVICES INC33SPANSION LLC7EON SILICON SOLUTION INC6EON SILICON SOLUTIONS INC5WU YIDER5
Top patents by PatentIndex Score
73 records- 0198US6445030B1Flash memory erase speed by fluorine implant or fluorinationADVANCED MICRO DEVICES INC·Filed 2001·Granted Sep 3, 2002·212 cites·22 claims
- 0296US6897533B1Multi-bit silicon nitride charge-trapping non-volatile memory cellADVANCED MICRO DEVICES INC·Filed 2002·Granted May 24, 2005·118 cites·9 claims
- 0396US6468865B1Method of simultaneous formation of bitline isolation and periphery oxideADVANCED MICRO DEVICES INC·Filed 2000·Granted Oct 22, 2002·97 cites·30 claims
- 0496US6436768B1Source drain implant during ONO formation for improved isolation of SONOS devicesADVANCED MICRO DEVICES INC·Filed 2001·Granted Aug 20, 2002·152 cites·22 claims
- 0595US6555436B2Simultaneous formation of charge storage and bitline to wordline isolationADVANCED MICRO DEVICES INC·Filed 2002·Granted Apr 29, 2003·56 cites·13 claims
- 0695US6512701B1Erase method for dual bit virtual ground flashADVANCED MICRO DEVICES INC·Filed 2001·Granted Jan 28, 2003·100 cites·41 claims
- 0794US6509232B1Formation of STI (shallow trench isolation) structures within core and periphery areas of flash memory deviceADVANCED MICRO DEVICES INC·Filed 2001·Granted Jan 21, 2003·65 cites·20 claims
- 0893US6566736B1Die seal for semiconductor device moisture protectionADVANCED MICRO DEVICES INC·Filed 2001·Granted May 20, 2003·81 cites·20 claims
- 0993US6465306B1Simultaneous formation of charge storage and bitline to wordline isolationADVANCED MICRO DEVICES INC·Filed 2000·Granted Oct 15, 2002·46 cites·21 claims
- 1092US6440797B1Nitride barrier layer for protection of ONO structure from top oxide loss in a fabrication of SONOS flash memoryADVANCED MICRO DEVICES INC·Filed 2001·Granted Aug 27, 2002·104 cites·20 claims
- 1190US6680509B1Nitride barrier layer for protection of ONO structure from top oxide loss in fabrication of SONOS flash memoryADVANCED MICRO DEVICES INC·Filed 2002·Granted Jan 20, 2004·80 cites·19 claims
- 1287US6664191B1Non self-aligned shallow trench isolation process with disposable space to define sub-lithographic poly spaceADVANCED MICRO DEVICES INC·Filed 2001·Granted Dec 16, 2003·38 cites·29 claims
- 1387US6344994B1Data retention characteristics as a result of high temperature bakeADVANCED MICRO DEVICES INC·Filed 2001·Granted Feb 5, 2002·52 cites·26 claims
- 1486US6963104B2Non-volatile memory deviceADVANCED MICRO DEVICES INC·Filed 2003·Granted Nov 8, 2005·38 cites·15 claims
- 1586US6754106B1Reference cell with various load circuits compensating for source side loading effects in a non-volatile memoryADVANCED MICRO DEVICES INC·Filed 2002·Granted Jun 22, 2004·39 cites·23 claims
- 1686US6707078B1Dummy wordline for erase and bitline leakageFASL LLC·Filed 2002·Granted Mar 16, 2004·39 cites·20 claims
- 1785US6797565B1Methods for fabricating and planarizing dual poly scalable SONOS flash memoryADVANCED MICRO DEVICES INC·Filed 2002·Granted Sep 28, 2004·28 cites·22 claims
- 1882US6958512B1Non-volatile memory deviceADVANCED MICRO DEVICES INC·Filed 2004·Granted Oct 25, 2005·28 cites·21 claims
- 1980US7842618B2System and method for improving mesa width in a semiconductor deviceSPANSION LLC·Filed 2005·Granted Nov 30, 2010·5 cites·17 claims
- 2079US6869844B1Method and structure for protecting NROM devices from induced charge damage during device fabricationADVANCED MICRO DEVICES INC·Filed 2003·Granted Mar 22, 2005·23 cites·20 claims
- 2179US6362051B1Method of forming ONO flash memory devices using low energy nitrogen implantationADVANCED MICRO DEVICES INC·Filed 2000·Granted Mar 26, 2002·22 cites·16 claims
- 2278US6767791B1Structure and method for suppressing oxide encroachment in a floating gate memory cellADVANCED MICRO DEVICES INC·Filed 2003·Granted Jul 27, 2004·22 cites·14 claims
- 2376US8802537B1System and method for improving reliability in a semiconductor deviceWU YIDER·Filed 2005·Granted Aug 12, 2014·6 cites·12 claims
- 2475US7229876B2Method of fabricating memoryMACRONIX INT CO LTD·Filed 2005·Granted Jun 12, 2007·4 cites·20 claims
- 2574US6607925B1Hard mask removal process including isolation dielectric refillADVANCED MICRO DEVICES INC·Filed 2002·Granted Aug 19, 2003·16 cites·12 claims
- 2672US7157333B1Non-volatile memory and fabricating method thereofMACRONIX INT CO LTD·Filed 2005·Granted Jan 2, 2007·4 cites·10 claims
- 2768US6628545B1Memory circuit for suppressing bit line current leakageADVANCED MICRO DEVICES INC·Filed 2002·Granted Sep 30, 2003·16 cites·20 claims
- 2866US6395654B1Method of forming ONO flash memory devices using rapid thermal oxidationADVANCED MICRO DEVICES INC·Filed 2000·Granted May 28, 2002·12 cites·14 claims
- 2965US6933558B2Flash memory deviceADVANCED MICRO DEVICES INC·Filed 2003·Granted Aug 23, 2005·11 cites·20 claims
- 3064US7632749B1Semiconductor device having a pad metal layer and a lower metal layer that are electrically coupled, whereas apertures are formed in the lower metal layer below a center area of the pad metal layerSPANSION LLC·Filed 2004·Granted Dec 15, 2009·11 cites·5 claims
- 3164US7408220B2Non-volatile memory and fabricating method thereofMACRONIX INT CO LTD·Filed 2006·Granted Aug 5, 2008·2 cites·7 claims
- 3264US6706595B2Hard mask process for memory device without bitline shortsADVANCED MICRO DEVICES INC·Filed 2002·Granted Mar 16, 2004·9 cites·20 claims
- 3364US6403420B1Nitrogen implant after bit-line formation for ONO flash memory devicesADVANCED MICRO DEVICES INC·Filed 2000·Granted Jun 11, 2002·9 cites·16 claims
- 3463US7265014B1Avoiding field oxide gouging in shallow trench isolation (STI) regionsSPANSION LLC·Filed 2004·Granted Sep 4, 2007·9 cites·9 claims
- 3560US7939423B2Method for manufacturing nonvolatile semiconductor memory device structureEON SILICON SOLUTION INC·Filed 2010·Granted May 10, 2011·1 cites·4 claims
- 3660US6667243B1Etch damage repair with thermal annealingADVANCED MICRO DEVICES INC·Filed 2002·Granted Dec 23, 2003·6 cites·11 claims
- 3758US8476156B1Manufacturing method of flash memory structure with stress areaWU YIDER·Filed 2011·Granted Jul 2, 2013·1 cites·7 claims
- 3858US7019366B1Electrostatic discharge performance of a silicon structure and efficient use of area with electrostatic discharge protective device under the pad approach and adjustment of via configuration thereto to control drain junction resistanceFASL LLC·Filed 2004·Granted Mar 28, 2006·8 cites·13 claims
- 3955US8598645B2System and method for improving mesa width in a semiconductor deviceKIM UNSOON·Filed 2010·Granted Dec 3, 2013·1 cites·20 claims
- 4053US7344938B2Method of fabricating memoryMACRONIX INT CO LTD·Filed 2007·Granted Mar 18, 2008·0 cites·20 claims
- 4153US6399984B1Species implantation for minimizing interface defect density in flash memory devicesADVANCED MICRO DEVICES INC·Filed 2001·Granted Jun 4, 2002·4 cites·6 claims
- 4251US6331954B1Determination of misalignment for floating gates near a gate stack bending point in array of flash memory cellsADVANCED MICRO DEVICES INC·Filed 2001·Granted Dec 18, 2001·7 cites·22 claims
- 4350US2007262412A1Avoiding Field Oxide Gouging In Shallow Trench Isolation (STI) RegionsSPANSION LLC·Filed 2007·Application pending·0 cites
- 4448US8647969B1Method for forming a semiconductor layer with improved gap filling propertiesSUGINO RINJI·Filed 2012·Granted Feb 11, 2014·0 cites·20 claims
- 4548US8133801B1Method for forming a semiconducting layer with improved gap filling propertiesSUGINO RINJI·Filed 2005·Granted Mar 13, 2012·0 cites·15 claims
- 4646US8008692B2Semiconductor memory structure with stress regionsEON SILICON SOLUTION INC·Filed 2008·Granted Aug 30, 2011·0 cites·17 claims
- 4746US7078749B1Memory structure having tunable interlayer dielectric and method for fabricating sameSPANSION LLC·Filed 2003·Granted Jul 18, 2006·2 cites·19 claims
- 4846US2008079059A1Method of manufacturing a nonvolatile semiconductor memory device and select gate device having a stacked gate structureEON SILICON SOLUTION INC·Filed 2007·Application pending·0 cites
- 4944US8017488B2Manufacturing method of a NOR flash memory with phosphorous and arsenic ion implantationsEON SILICON SOLUTIONS INC·Filed 2009·Granted Sep 13, 2011·0 cites·5 claims
- 5044US7067388B1Flash memory device and method of forming the same with improved gate breakdown and enduranceSPANSION LLC·Filed 2004·Granted Jun 27, 2006·1 cites·11 claims
Showing the top 50 of 73 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →