Inventor · disambiguated record
Ying-Wei Yen
Also filed as: YEN YING · YEN YING-WEI
24 granted patents·14 pending applications·124 citations·filing 2004–2025
94Inventor score
Top patents by PatentIndex Score
38 records- 0190US7312139B2Method of fabricating nitrogen-containing gate dielectric layer and semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2005·Granted Dec 25, 2007·18 cites·30 claims
- 0288US8536038B2Manufacturing method for metal gate using ion implantationWang shao-wei·Filed 2011·Granted Sep 17, 2013·10 cites·35 claims
- 0388US8426277B2Semiconductor processLIN CHIEN-LIANG·Filed 2011·Granted Apr 23, 2013·9 cites·22 claims
- 0487US7037773B2Method of manufacturing metal-oxide-semiconductor transistorUNITED MICROELECTRONICS CORP·Filed 2004·Granted May 2, 2006·44 cites·20 claims
- 0580US8895435B2Polysilicon layer and method of forming the sameLIN CHIEN-LIANG·Filed 2011·Granted Nov 25, 2014·4 cites·13 claims
- 0677US8501636B1Method for fabricating silicon dioxide layerWang shao-wei·Filed 2012·Granted Aug 6, 2013·5 cites·16 claims
- 0775US8802579B2Semiconductor structure and fabrication method thereofLIN CHIEN-LIANG·Filed 2011·Granted Aug 12, 2014·3 cites·17 claims
- 0875US8263501B2Silicon dioxide film fabricating processLIN CHIEN-LIANG·Filed 2010·Granted Sep 11, 2012·3 cites·12 claims
- 0973US7435640B2Method of fabricating gate structureUNITED MICROELECTRONICS CORP·Filed 2005·Granted Oct 14, 2008·4 cites·11 claims
- 1073US7265065B2Method for fabricating dielectric layer doped with nitrogenUNITED MICROELECTRONICS CORP·Filed 2005·Granted Sep 4, 2007·5 cites·12 claims
- 1172US8889523B2Semiconductor processSUN TE-LIN·Filed 2012·Granted Nov 18, 2014·3 cites·19 claims
- 1271US12237398B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2021·Granted Feb 25, 2025·0 cites·1 claims
- 1371US7601404B2Method for switching decoupled plasma nitridation processes of different dosesUNITED MICROELECTRONICS CORP·Filed 2005·Granted Oct 13, 2009·4 cites·14 claims
- 1471US2025169140A1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2025·Application pending·0 cites
- 1566US8394688B2Process for forming repair layer and MOS transistor having repair layerLIN CHIEN-LIANG·Filed 2011·Granted Mar 12, 2013·2 cites·19 claims
- 1665US8232605B2Method for gate leakage reduction and Vt shift control and complementary metal-oxide-semiconductor deviceLIN CHIEN-LIANG·Filed 2008·Granted Jul 31, 2012·4 cites·13 claims
- 1764US7811892B2Multi-step annealing processUNITED MICROELECTRONICS CORP·Filed 2006·Granted Oct 12, 2010·2 cites·31 claims
- 1863US7214631B2Method of forming gate dielectric layerUNITED MICROELECTRONICS CORP·Filed 2005·Granted May 8, 2007·2 cites·9 claims
- 1962US8921238B2Method for processing high-k dielectric layerWang shao-wei·Filed 2011·Granted Dec 30, 2014·1 cites·14 claims
- 2060US11063135B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2018·Granted Jul 13, 2021·0 cites·1 claims
- 2154US7335548B2Method of manufacturing metal-oxide-semiconductor transistorUNITED MICROELECTRONICS CORP·Filed 2006·Granted Feb 26, 2008·1 cites·14 claims
- 2254US2015021776A1Polysilicon layerUNITED MICROELECTRONICS CORP·Filed 2014·Application pending·0 cites
- 2353US9634083B2Semiconductor structure and process thereofUNITED MICROELECTRONICS CORP·Filed 2012·Granted Apr 25, 2017·0 cites·12 claims
- 2453US7709316B2Method of fabricating gate structureUNITED MICROELECTRONICS CORP·Filed 2008·Granted May 4, 2010·0 cites·22 claims
- 2550US2017186617A1Semiconductor structureUNITED MICROELECTRONICS CORP·Filed 2017·Application pending·0 cites
- 2649US2008157231A1Gate structureUNITED MICROELECTRONICS CORP·Filed 2008·Application pending·0 cites
- 2744US2008254642A1Method of fabricating gate dielectric layerUNITED MICROELECTRONICS CORP·Filed 2007·Application pending·0 cites
- 2842US2006062913A1Process for depositing btbas-based silicon nitride filmsWANG YUN-REN·Filed 2004·Application pending·0 cites
- 2941US8614152B2Gate structure and a method for forming the sameLIN CHIEN-LIANG·Filed 2011·Granted Dec 24, 2013·0 cites·9 claims
- 3040US8741784B2Process for fabricating semiconductor device and method of fabricating metal oxide semiconductor deviceLIN CHIEN-LIANG·Filed 2011·Granted Jun 3, 2014·0 cites·12 claims
- 3139US2013001707A1Fabricating method of mos transistor, fin field-effect transistor and fabrication method thereofLIN CHIEN-LIANG·Filed 2011·Application pending·0 cites
- 3238US2007082503A1Method of fabricating a dielectric layerWANG YUN-REN·Filed 2005·Application pending·0 cites
- 3338US2006014350A1Method for fabricating a semiconductor transistor device having ultra-shallow source/drain extensionsWANG YUN-REN·Filed 2004·Application pending·0 cites
- 3437US2013012012A1Semiconductor processLIN CHIEN-LIANG·Filed 2011·Application pending·0 cites
- 3537US2012329285A1Gate dielectric layer forming methodWang shao-wei·Filed 2011·Application pending·0 cites
- 3635US2012264284A1Manufacturing method for metal gate structureWang shao-wei·Filed 2011·Application pending·0 cites
- 3735US2012309171A1Method for fabricating semiconductor deviceLU TSUO-WEN·Filed 2011·Application pending·0 cites
- 3830US2012306028A1Semiconductor process and structure thereofWANG YU-REN·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →