Inventor · disambiguated record
Yoshinari Amano
Also filed as: AMANO YOSHINARI
16 granted patents·1 pending application·243 citations·filing 1974–2006
94Inventor score
Top patents by PatentIndex Score
17 records- 0190US4050930AElectrical contact materialSUMITOMO ELECTRIC INDUSTRIES·Filed 1976·Granted Sep 27, 1977·37 cites·3 claims
- 0282US4457780AElectric contact materialsSUMITOMO ELECTRIC INDUSTRIES·Filed 1982·Granted Jul 3, 1984·22 cites·8 claims
- 0382US4072515AElectrical contact materialSUMITOMO ELECTRIC INDUSTRIES·Filed 1974·Granted Feb 7, 1978·23 cites·3 claims
- 0474US5342573AMethod of producing a tungsten heavy alloy productSUMITOMO ELECTRIC INDUSTRIES·Filed 1992·Granted Aug 30, 1994·43 cites·12 claims
- 0573US5086333ASubstrate for semiconductor apparatus having a composite materialSUMITOMO ELECTRIC INDUSTRIES·Filed 1989·Granted Feb 4, 1992·27 cites·8 claims
- 0670US5099310ASubstrate for semiconductor apparatusSUMITOMO ELECTRIC INDUSTRIES·Filed 1989·Granted Mar 24, 1992·26 cites·4 claims
- 0769US6595821B2Rotary anode for X-ray tube comprising an Mo-containing layer and a W-containing layer laminated to each other and method of producing the sameTOKYO TUNGSTEN KK·Filed 2001·Granted Jul 22, 2003·7 cites·6 claims
- 0858US7083759B2Method of producing a heat dissipation substrate of molybdenum powder impregnated with copper with rolling in primary and secondary directionsALMT CORP·Filed 2001·Granted Aug 1, 2006·10 cites·7 claims
- 0955US6926861B2Semiconductor package and method for producing heat-radiating substrate for itTOKYO TUNGSTEN KK·Filed 2003·Granted Aug 9, 2005·6 cites·7 claims
- 1049US5525428ASubstrate for semiconductor apparatusSUMITOMO ELECTRIC INDUSTRIES·Filed 1995·Granted Jun 11, 1996·10 cites·17 claims
- 1147US6693353B1Semiconductor package and method for producing heat-radiating substrate for itTOKYO TUNGSTEN KK·Filed 1999·Granted Feb 17, 2004·13 cites·6 claims
- 1246US5563101ASubstrate for semiconductor apparatusSUMITOMO ELECTRIC INDUSTRIES·Filed 1995·Granted Oct 8, 1996·9 cites·50 claims
- 1341US5409864ASubstrate for semiconductor apparatusSUMITOMO ELECTRIC INDUSTRIES·Filed 1994·Granted Apr 25, 1995·7 cites·3 claims
- 1439US2006246314A1Method of producing a heat dissipation substrate of molybdenum powder impregnated with copper with rolling in primary and secondary directionsALMT CORP·Filed 2006·Application pending·0 cites
- 1536US7547412B2Composite material, method for producing same and member using sameALMT CORP·Filed 2003·Granted Jun 16, 2009·0 cites·7 claims
- 1632US5708959ASubstrate for semiconductor apparatusSUMITOMO ELECTRIC INDUSTRIES·Filed 1996·Granted Jan 13, 1998·2 cites·35 claims
- 1725US6233311B1Rotary anode for X-ray tube comprising an Mo-containing layer and a W-containing layer laminated to each other and method of producing the sameTOKYO TUNGSTERS CO LTD·Filed 1999·Granted May 15, 2001·1 cites·4 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →