Inventor · disambiguated record
Youn-Joung Cho
Also filed as: CHO YOUN-JOUNG
39 granted patents·13 pending applications·64 citations·filing 2006–2025
96Inventor score
Top patents by PatentIndex Score
52 records- 0191US11043553B2Integrated circuit deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jun 22, 2021·6 cites·20 claims
- 0291US9812329B2Method of fabricating a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Nov 7, 2017·9 cites·20 claims
- 0388US10134582B2Tantalum compound and methods of forming thin film and fabricating integrated circuit device by using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Nov 20, 2018·3 cites·10 claims
- 0487US10049882B1Method for fabricating semiconductor device including forming a dielectric layer on a structure having a height difference using ALDSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Aug 14, 2018·6 cites·20 claims
- 0586US9637511B2Method of forming thin film using a heterostructured nickel compoundSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted May 2, 2017·4 cites·12 claims
- 0685US9359382B2β-ketoimine ligand, method of preparing the same, metal complex comprising the same and method of forming thin film using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Jun 7, 2016·2 cites·2 claims
- 0784US9391089B2Method of manufacturing semiconductor device including nickel-containing filmSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jul 12, 2016·4 cites·18 claims
- 0879US9923047B2Method for manufacturing a capacitor for semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Mar 20, 2018·3 cites·19 claims
- 0978US10913754B2Lanthanum compound and methods of forming thin film and integrated circuit device using the lanthanum compoundSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Feb 9, 2021·2 cites·15 claims
- 1078US10259836B2Methods of forming thin film and fabricating integrated circuit device using niobium compoundSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Apr 16, 2019·3 cites·20 claims
- 1177US9425059B2Methods of forming a pattern and methods of manufacturing a semiconductor device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Aug 23, 2016·1 cites·17 claims
- 1275US12113035B2Semiconductor device and method for fabricating thereofSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Oct 8, 2024·0 cites·20 claims
- 1375US10224200B2Aluminum compound, method of forming thin film by using the same, and method of fabricating integrated circuit deviceSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Mar 5, 2019·2 cites·8 claims
- 1474US10882873B2Method of forming tin-containing material film and method of synthesizing a tin compoundSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jan 5, 2021·0 cites·12 claims
- 1573US9991112B2Method for forming dielectric film and method for fabricating semiconductor deviceCHUNG WON WOONG·Filed 2017·Granted Jun 5, 2018·3 cites·20 claims
- 1671US9359383B2β-ketoimine ligand, method of preparing the same, metal complex comprising the same and method of forming thin film using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Jun 7, 2016·0 cites·6 claims
- 1771US8268397B2Organometallic precursor, thin film having the same, metal wiring including the thin film, method of forming a thin film and method of manufacturing a metal wiring using the sameCHO YOUN-JOUNG·Filed 2008·Granted Sep 18, 2012·4 cites·8 claims
- 1871US7648854B2Methods of forming metal oxide layers, methods of forming gate structures using the same, and methods of forming capacitors using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jan 19, 2010·3 cites·19 claims
- 1970US10242877B2Aluminum compound and methods of forming thin film and fabricating integrated circuit device by using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Mar 26, 2019·1 cites·16 claims
- 2069US10468264B2Method of fabricating semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Nov 5, 2019·1 cites·14 claims
- 2167US10651031B2Tantalum compoundSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted May 12, 2020·0 cites·20 claims
- 2267US10329312B2Lanthanum compound, method of synthesizing lanthanum compound, lanthanum precursor composition, method of forming thin film, and method of manufacturing integrated circuit deviceSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jun 25, 2019·0 cites·16 claims
- 2366US11848287B2Semiconductor device and method for fabricating thereofSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Dec 19, 2023·0 cites·20 claims
- 2466US7488684B2Organic aluminum precursor and method of forming a metal wire using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Feb 10, 2009·2 cites·8 claims
- 2566US2018155372A1Tin compound, method of synthesizing the same, tin precursor compound for atomic layer deposition, and method of forming tin-containing material filmSAMSUNG ELECTRONICS CO LTD·Filed 2017·Application pending·0 cites
- 2664US10319590B2Method of forming semiconductor device using metal-containing hardmask to pattern photoresist having protected polymerSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jun 11, 2019·1 cites·20 claims
- 2761US11929389B2Integrated circuit deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Mar 12, 2024·0 cites·13 claims
- 2861US10752645B2Method of forming a thin filmSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Aug 25, 2020·0 cites·9 claims
- 2961US7452569B2Organic aluminum precursor and method of manufacturing a metal wiring using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 18, 2008·2 cites·7 claims
- 3060US9472345B2Aluminum precursor, method of forming a thin film and method of forming a capacitor using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Oct 18, 2016·1 cites·20 claims
- 3159US11062940B2Organometallic precursors, methods of forming a layer using the same and methods of manufacturing semiconductor devices using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jul 13, 2021·0 cites·18 claims
- 3259US2025157809A1Thin-film forming composition including aluminum compound, method of forming thin film by using the thin-film forming composition, and method of manufacturing semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 3358US2025305120A1Method for selective deposition of layer of interestSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 3457US8563085B2Precursor composition, methods of forming a layer, methods of forming a gate structure and methods of forming a capacitorCHO YOUN-JOUNG·Filed 2011·Granted Oct 22, 2013·1 cites·14 claims
- 3555US9790246B2Nickel compound and method of forming thin film using the nickel compoundSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Oct 17, 2017·0 cites·3 claims
- 3654US12500079B2Semiconductor device manufacturing methodSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Dec 16, 2025·0 cites·18 claims
- 3754US11901191B2Atomic layer etching method and semiconductor device manufacturing method using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Feb 13, 2024·0 cites·19 claims
- 3854US10361118B2Organometallic precursors, methods of forming a layer using the same and methods of manufacturing semiconductor devices using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jul 23, 2019·0 cites·7 claims
- 3953US9562299B2Copper electroplating solution and copper electroplating apparatusSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Feb 7, 2017·0 cites·9 claims
- 4053US2012251724A1Beta-ketoimine ligand, method of preparing the same, metal complex comprising the same and method of forming thin film using the sameCHO YOUN-JOUNG·Filed 2012·Application pending·0 cites
- 4152US2021380622A1Materials for fabricating thin films, methods of fabricating thin films using the same, and equipment for fabricating thin films using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Application pending·0 cites
- 4251US2023220213A1Compositions for manufacturing thin film and methods for manufacturing semiconductor device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
- 4348US10553449B2Methods of forming a silicon layer, methods of forming patterns, and methods of manufacturing semiconductor devices using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Feb 4, 2020·0 cites·10 claims
- 4448US2024213017A1Method of manufacturing integrated circuit deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 4547US10923341B2Method of forming oxide layer and method of fabricating semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Feb 16, 2021·0 cites·20 claims
- 4647US2008292783A1Method of manufacturing a thin layer and methods of manufacturing gate structures and capacitors using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 4746US2022260212A1Acetylene fluid supply package, system comprising the same and method of fabricating semiconductor device using the sameSINHA ASHWINI K·Filed 2022·Application pending·0 cites
- 4844US2019378854A1Semiconductor device and method of manufacturing the same using preliminary sacrificial layersSAMSUNG ELECTRONICS CO LTD·Filed 2018·Application pending·0 cites
- 4943US9941114B2Organometallic precursors and methods of forming thin layers using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Apr 10, 2018·0 cites·20 claims
- 5042US2008057224A1Method of forming a thin film and methods of manufacturing a gate structure and a capacitor using sameCHO YOUN-JOUNG·Filed 2007·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →