Inventor · disambiguated record
Younjoung Cho
Also filed as: CHO YOUNJOUNG
19 granted patents·19 pending applications·14 citations·filing 2014–2025
89Inventor score
Top patents by PatentIndex Score
38 records- 0194US11081338B2Method of forming oxide film including two non-oxygen elements, method of manufacturing semiconductor device, method of forming dielectric film, and semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Aug 3, 2021·4 cites·20 claims
- 0277US10134583B2Methods of forming a low-k dielectric layer and methods of fabricating a semiconductor device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Nov 20, 2018·3 cites·20 claims
- 0375US9437419B2Method of forming a layer using a trialkylsilane silicon precursor compoundKIM YOUNSOO·Filed 2014·Granted Sep 6, 2016·4 cites·20 claims
- 0473US9899392B2Silicon precursor, method of forming a layer using the same, and method of fabricating semiconductor device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Feb 20, 2018·2 cites·13 claims
- 0572US12398166B2Method of selectively forming cobalt metal layer by using cobalt compound, and method of fabricating semiconductor device by using cobalt compoundSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Aug 26, 2025·0 cites·14 claims
- 0667US11728160B2Method of forming oxide film including two non-oxygen elements, method of manufacturing semiconductor device, method of forming dielectric film, and semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Aug 15, 2023·0 cites·20 claims
- 0766US10847362B2Method of fabricating semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Nov 24, 2020·1 cites·19 claims
- 0866US2025154648A1Precursor for forming metal thin film, manufacturing method using the same, and metal thin film manufactured therebySAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 0962US2025179627A1Composition for depositing a molybdenum-containing thin film, method for manufacturing a molybdenum-containing thin film, and molybdenum-containing thin film manufactured therebySAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1061US12378272B2Yttrium compound and method of manufacturing integrated circuit device by using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Aug 5, 2025·0 cites·11 claims
- 1161US2025163569A1Area-selective film forming method using polyureaSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1259US2025163081A1Silicon compounds and methods of manufacturing integrated circuit device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 1358US2025372392A1Dry-etching method for silicon oxide layerSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 1457US12473309B2Organometallic compound and method of manufacturing integrated circuit using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Nov 18, 2025·0 cites·17 claims
- 1557US2022380390A1Silicon compounds and methods of manufacturing integrated circuit device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
- 1656US2021032279A1Method of selectively forming cobalt metal layer by using cobalt compound, and method of fabricating semiconductor device by using cobalt compoundSAMSUNG ELECTRONICS CO LTD·Filed 2020·Application pending·0 cites
- 1756US2024067663A1Yttrium compound, source material for forming yttrium-containing film, and method of manufacturing integrated circuit device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 1855US11746121B2Molybdenum compound and method of manufacturing integrated circuit device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Sep 5, 2023·0 cites·20 claims
- 1955US2022324887A1Organometallic adduct compound and method of manufacturing integrated circuit device by using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
- 2055US2024243010A1Inhibitor for selectively depositing thin film and method for selectively depositing thin filmSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2155US2024429039A1Method of depositing filmSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2254US12410203B2Organometallic adduct compound and method of manufacturing integrated circuit using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Sep 9, 2025·0 cites·17 claims
- 2354US11524973B2Metal compounds and methods of fabricating semiconductor devices using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Dec 13, 2022·0 cites·20 claims
- 2453US11081389B2Method of manufacturing semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Aug 3, 2021·0 cites·20 claims
- 2551US11466043B2Niobium compound and method of forming thin filmSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Oct 11, 2022·0 cites·17 claims
- 2649US2023406822A1Silicon compound and method of manufacturing integrated circuit device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 2748US11254698B2Cobalt precursor and methods for manufacture using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Feb 22, 2022·0 cites·15 claims
- 2848US2024145303A1Selective thin film formation method and method of manufacturing semiconductor device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 2948US2023215723A1Methods of manufacturing integrated circuit devices using carbonyl compoundsSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
- 3048US2025250671A1Non-carbonyl metal deposition adjuvant, deposition method of late transition metal in channel hole using the same, and semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 3147US11332486B2Aluminum compound and method for manufacturing semiconductor device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted May 17, 2022·0 cites·11 claims
- 3247US2023407051A1Process of forming silicon-containing film and method of manufacturing integrated circuit device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 3346US12051586B2Method of manufacturing semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jul 30, 2024·0 cites·20 claims
- 3445US2025357120A1Manufacturing method of semiconductor device including plasma etching processSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 3542US12287064B2Gas container and deposition system including the sameSK SPECIALTY CO LTD·Filed 2020·Granted Apr 29, 2025·0 cites·11 claims
- 3642US2020231610A1Tin compound, tin precursor compound for forming a tin-containing layer, and methods of forming a thin layer using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Application pending·0 cites
- 3740US2015303060A1Silicon precursor, method of forming a layer using the same, and method of fabricating semiconductor device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Application pending·0 cites
- 3839US10883173B2Gas storage cylinder, deposition system, and method of manufacturing semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jan 5, 2021·0 cites·13 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →