Silicon precursor, method of forming a layer using the same, and method of fabricating semiconductor device using the same

Abstract

The inventive concepts provide silicon precursors, methods of forming a layer using the same, and methods of fabricating a semiconductor device using the same. The silicon precursor includes a silane group including two or more silicon atoms. The silicon precursor has a high and uniform adsorption property on surfaces of layers (e.g., a silicon layer, an oxide layer, and a nitride layer) that are mainly used when semiconductor devices are fabricated.

What is claimed is: 
     
         1 . A method of forming a layer, the method comprising:
 providing a silicon precursor having a chemical formula of R 1 —Si x H y , on a substrate to form a single-layered silicon atomic layer, wherein x is an integral number equal to or greater than 2, y satisfies an equation having a formula of y=2x+1, and R 1  includes at least one of an amino group, an alkyl group, a cyclopentadienyl (C 5 H 5 ) group, or a halogen.   
     
     
         2 . The method of  claim 1 , further comprising:
 forming a silicon nitride layer, a silicon oxide layer, or a silicon-germanium layer on the single-layered silicon atomic layer.   
     
     
         3 . The method of  claim 1 , further comprising:
 forming a poly-silicon layer on the single-layered silicon atomic layer by providing at least one of monosilane (SiH 4 ), disilane (Si 2 H 6 ), or a high-grade silane having a chemical formula of Si n H 2n+2 , wherein n is an integral number equal to or greater than 3.   
     
     
         4 . The method of  claim 3 , wherein forming the poly-silicon layer further comprises:
 doping the poly-silicon layer by providing at least one of Group III elements, Group V elements, or carbon.   
     
     
         5 . The method of  claim 1 , further comprising:
 forming a non-silicon atomic layer on the single-layered silicon atomic layer,   wherein forming the single-layered silicon atomic layer and forming the non-silicon atomic layer are alternately and repeatedly performed, and   wherein the non-silicon atomic layer is formed by providing a gas including oxygen, nitrogen, or germanium.   
     
     
         6 . The method of  claim 1 , wherein R 1  has the following chemical formula 1, 
       
         
           
           
               
               
           
         
         wherein each of R 2  and R 3  independently include at least one of a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, or a tert-butyl group. 
       
     
     
         7 . The method of  claim 1 , wherein the silicon precursor is diisopropylaminodisilane (((CH 3 ) 2 CH) 2 N—SiH 2 SiH 3 ). 
     
     
         8 . The method of  claim 1 , wherein the substrate includes an oxide layer formed thereon, and
 wherein the silicon precursor is provided on the oxide layer.   
     
     
         9 . A method of fabricating a semiconductor device, the method comprising:
 providing a silicon precursor having a chemical formula of R 1 —Si x H y  on a substrate to form a single-layered silicon atomic layer, wherein x is an integral number equal to or greater than 2, y satisfies an equation having a formula of y=2x+1, and R 1  includes at least one of an amino group, an alkyl group, a cyclopentadienyl (C 5 H 5 ) group, or a halogen.   
     
     
         10 . The method of  claim 9 , further comprising:
 forming a lower structure including a recessed region on the substrate before the formation of the single-layered silicon atomic layer,   wherein the single-layered silicon atomic layer is formed to conformally cover the lower structure.   
     
     
         11 . The method of  claim 10 , wherein the recessed region is a contact hole, and
 wherein forming the lower structure comprises:   forming an interlayer insulating layer covering the substrate; and   patterning the interlayer insulating layer to form the contact hole.   
     
     
         12 . The method of  claim 11 , further comprising:
 after the formation of the single-layered silicon atomic layer, forming a poly-silicon layer filling the contact hole on the single-layered silicon atomic layer by providing at least one of monosilane (SiH 4 ), disilane (Si 2 H 6 ), or a high-grade silane having a chemical formula of Si n H 2n+2 , wherein n is an integral number equal to or greater than 3.   
     
     
         13 . The method of  claim 12 , further comprising:
 forming a contact plug including a portion of the poly-silicon layer in the contact hole; and   forming a data storage element electrically connected to the contact plug.   
     
     
         14 . The method of  claim 10 , wherein the recessed region is an active hole, and
 wherein forming the lower structure comprises:   alternately and repeatedly stacking sacrificial layers and inter-gate insulating layers on the substrate; and   successively patterning the inter-gate insulating layers and the sacrificial layers to form the active hole exposing the substrate.   
     
     
         15 . The method of  claim 14 , further comprising:
 forming an active pillar covering a sidewall of the active hole after the formation of the single-layered silicon atomic layer, the active pillar having a cup-shape; and   replacing the sacrificial layers with a conductive layer.   
     
     
         16 . The method of  claim 15 , wherein forming the active pillar comprises:
 conformally forming a poly-silicon layer on the single-layered silicon atomic layer by providing at least one of monosilane (SiH 4 ), disilane (Si 2 H 6 ), or a high-grade silane having a chemical formula of Si n H 2n+2 , wherein n is an integral number equal to or greater than 3, the poly-silicon layer covering the sidewall of the active hole.   
     
     
         17 . The method of  claim 9 , wherein R 1  has the following chemical formula 1, 
       
         
           
           
               
               
           
         
         wherein each of R 2  and R 3  independently include at least one of a methyl group, an ethyl group, a propyl group, an isopropyl group, or a butyl group. 
       
     
     
         18 . The method of  claim 10 , wherein R 1  has the following chemical formula 1, 
       
         
           
           
               
               
           
         
         wherein each of R 2  and R 3  independently include at least one of a methyl group, an ethyl group, a propyl group, an isopropyl group, or a butyl group. 
       
     
     
         19 . The method of  claim 9 , wherein the silicon precursor is diisopropylaminodisilane (((CH 3 ) 2 CH) 2 N—SiH 2 SiH 3 ). 
     
     
         20 . The method of  claim 9 , wherein the substrate includes an oxide layer formed thereon, and
 wherein the silicon precursor is provided on the oxide layer.