Inventor · disambiguated record
Yoshiaki Fukuzumi
Also filed as: FUKUZUMI YOSHIAKI
294 granted patents·65 pending applications·5,419 citations·filing 1998–2025
99Inventor score
Top patents by PatentIndex Score
359 records- 0199US11792992B2Nonvolatile semiconductor memory device and method for manufacturing sameKIOXIA CORP·Filed 2022·Granted Oct 17, 2023·4 cites·10 claims
- 0299US11594547B2Semiconductor device having a pad proximate to a step structure section of an array chipKIOXIA CORP·Filed 2020·Granted Feb 28, 2023·6 cites·11 claims
- 0399US11362106B2Manufacturing method of a nonvolatile semiconductor memory deviceKIOXIA CORP·Filed 2021·Granted Jun 14, 2022·5 cites·20 claims
- 0499US9558945B2Semiconductor memory device with electrode connecting to circuit chip through memory array chipTOSHIBA KK·Filed 2015·Granted Jan 31, 2017·93 cites·6 claims
- 0599US9035374B2Non-volatile semiconductor storage device and method of manufacturing the sameTOSHIBA KK·Filed 2014·Granted May 19, 2015·36 cites·20 claims
- 0699US8729624B2Non-volatile semiconductor storage device and method of manufacturing the sameTOSHIBA KK·Filed 2013·Granted May 20, 2014·53 cites·20 claims
- 0799US8551838B2Nonvolatile semicondutor memory device and manufacturing method thereofKITO MASARU·Filed 2011·Granted Oct 8, 2013·52 cites·20 claims
- 0899US8372720B2Non-volatile semiconductor storage device and method of manufacturing the sameTOSHIBA KK·Filed 2008·Granted Feb 12, 2013·127 cites·8 claims
- 0999US8374033B2Nonvolatile semiconductor memory deviceTOSHIBA KK·Filed 2010·Granted Feb 12, 2013·200 cites·9 claims
- 1099US8338882B2Semiconductor memory device and method for manufacturing sameTANAKA HIROYASU·Filed 2010·Granted Dec 25, 2012·273 cites·11 claims
- 1199US8008710B2Non-volatile semiconductor storage deviceTOSHIBA KK·Filed 2009·Granted Aug 30, 2011·275 cites·20 claims
- 1299US7936004B2Nonvolatile semiconductor memory device and manufacturing method thereofTOSHIBA KK·Filed 2007·Granted May 3, 2011·310 cites·26 claims
- 1399US7910432B2Non-volatile semiconductor storage device and method of manufacturing the sameTOSHIBA KK·Filed 2009·Granted Mar 22, 2011·231 cites·20 claims
- 1499US7558141B2Memory system, semiconductor memory device and method of driving sameTOSHIBA KK·Filed 2007·Granted Jul 7, 2009·222 cites·19 claims
- 1598US12100454B2Memory device including in-tier driver circuitMICRON TECHNOLOGY INC·Filed 2022·Granted Sep 24, 2024·2 cites·35 claims
- 1698US10916559B2Nonvolatile semiconductor memory device and manufacturing method thereofKIOXIA CORP·Filed 2019·Granted Feb 9, 2021·10 cites·20 claims
- 1798US10211219B2Nonvolatile semiconductor memory device and manufacturing method thereofTOSHIBA KK·Filed 2017·Granted Feb 19, 2019·11 cites·14 claims
- 1898US10090315B2Semiconductor memory device in which an array chip including three-dimensionally disposed memory cells bonded to a control circuit chipTOSHIBA MEMORY CORP·Filed 2016·Granted Oct 2, 2018·20 cites·14 claims
- 1998US9520407B2Semiconductor memory device and method for manufacturing the sameTOSHIBA KK·Filed 2015·Granted Dec 13, 2016·42 cites·16 claims
- 2098US9431419B2Semiconductor memory device and method for manufacturing sameTOSHIBA KK·Filed 2015·Granted Aug 30, 2016·50 cites·14 claims
- 2198US9356042B2Non-volatile semiconductor storage device and method of manufacturing the sameTOSHIBA KK·Filed 2015·Granted May 31, 2016·32 cites·16 claims
- 2298US8476708B2Semiconductor memory device having a circuit formed on a single crystal semiconductor layer with varied germanium concentrationFUKUZUMI YOSHIAKI·Filed 2012·Granted Jul 2, 2013·59 cites·15 claims
- 2398US8436414B2Non-volatile semiconductor stacked memory device having two semiconductor pillars in a through hole and method for manufacturing sameTANAKA HIROYASU·Filed 2010·Granted May 7, 2013·56 cites·18 claims
- 2498US8405142B2Semiconductor memory deviceKATSUMATA RYOTA·Filed 2011·Granted Mar 26, 2013·46 cites·7 claims
- 2598US8274108B2Nonvolatile semiconductor memory device and method for manufacturing the sameKATSUMATA RYOTA·Filed 2010·Granted Sep 25, 2012·48 cites·14 claims
- 2698US8178919B2Nonvolatile semiconductor memory device and method for manufacturing sameFUJIWARA TOMOKO·Filed 2010·Granted May 15, 2012·216 cites·15 claims
- 2798US8169826B2Nonvolatile semiconductor memory deviceHISHIDA TOMOO·Filed 2010·Granted May 1, 2012·68 cites·20 claims
- 2898US7847334B2Non-volatile semiconductor storage device and method of manufacturing the sameTOSHIBA KK·Filed 2009·Granted Dec 7, 2010·85 cites·9 claims
- 2998US7821058B2Nonvolatile semiconductor memory and method for manufacturing the sameTOSHIBA KK·Filed 2008·Granted Oct 26, 2010·95 cites·15 claims
- 3097US11482537B2Non-volatile memory device having at least one metal body and one semiconductor body extending through the electrode stackKIOXIA CORP·Filed 2020·Granted Oct 25, 2022·3 cites·20 claims
- 3197US9397109B1Semiconductor memory device and method for manufacturing sameTOSHIBA KK·Filed 2015·Granted Jul 19, 2016·16 cites·20 claims
- 3297US8653582B2Nonvolatile semiconductor memory device and method for manufacturing sameFUKUZUMI YOSHIAKI·Filed 2010·Granted Feb 18, 2014·26 cites·15 claims
- 3397US8188530B2Nonvolatile semiconductor memory device and method for manufacturing sameTANAKA HIROYASU·Filed 2010·Granted May 29, 2012·31 cites·15 claims
- 3497US8107286B2Three-dimensional nonvolatile semiconductor memory device for curbing a leak current and method of data read thereinITAGAKI KIYOTARO·Filed 2010·Granted Jan 31, 2012·41 cites·20 claims
- 3597US8013383B2Nonvolatile semiconductor storage device including a plurality of memory stringsTOSHIBA KK·Filed 2009·Granted Sep 6, 2011·63 cites·11 claims
- 3697US8009465B2Magnetoresistive elementTOSHIBA KK·Filed 2009·Granted Aug 30, 2011·55 cites·17 claims
- 3797US7847342B2Non-volatile semiconductor storage device and method of manufacturing the sameTOSHIBA KK·Filed 2008·Granted Dec 7, 2010·71 cites·11 claims
- 3897US7122854B2Semiconductor memory device comprising magneto resistive element and its manufacturing methodTOSHIBA KK·Filed 2005·Granted Oct 17, 2006·54 cites·20 claims
- 3996US11393845B2Microelectronic devices, and related memory devices and electronic systemsMICRON TECHNOLOGY INC·Filed 2020·Granted Jul 19, 2022·4 cites·27 claims
- 4096US11227869B1Memory array structures for capacitive sense NAND memoryMICRON TECHNOLOGY INC·Filed 2020·Granted Jan 18, 2022·4 cites·20 claims
- 4196US9941296B2Nonvolatile semiconductor memory device and method for manufacturing sameTOSHIBA MEMORY CORP·Filed 2017·Granted Apr 10, 2018·7 cites·7 claims
- 4296US9601503B2Nonvolatile semiconductor memory device and method for manufacturing sameTOSHIBA KK·Filed 2016·Granted Mar 21, 2017·7 cites·16 claims
- 4396US9312134B2Nonvolatile semiconductor memory device and method for manufacturing sameTOSHIBA KK·Filed 2014·Granted Apr 12, 2016·12 cites·20 claims
- 4496US9070589B2Nonvolatile semiconductor memory deviceTOSHIBA KK·Filed 2013·Granted Jun 30, 2015·17 cites·28 claims
- 4596US9064735B2Nonvolatile semiconductor memory device and manufacturing method thereofKITO MASARU·Filed 2011·Granted Jun 23, 2015·18 cites·20 claims
- 4696US8415242B2Nonvolatile semiconductor memory device and method of manufacturing the sameMIZUSHIMA ICHIRO·Filed 2010·Granted Apr 9, 2013·34 cites·14 claims
- 4796US8350314B2Semiconductor memory device and method for fabricating semiconductor memory deviceTOSHIBA KK·Filed 2008·Granted Jan 8, 2013·37 cites·20 claims
- 4896US8247863B2Nonvolatile semiconductor memory device and method of manufacturing the sameFUKUZUMI YOSHIAKI·Filed 2010·Granted Aug 21, 2012·28 cites·20 claims
- 4996US8199573B2Nonvolatile semiconductor memory deviceFUKUZUMI YOSHIAKI·Filed 2010·Granted Jun 12, 2012·35 cites·20 claims
- 5096US8178917B2Non-volatile semiconductor storage device having memory cells disposed three-dimensionally, and method of manufacturing the sameTANAKA HIROYASU·Filed 2009·Granted May 15, 2012·36 cites·20 claims
Showing the top 50 of 359 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →