Inventor · disambiguated record
Yoshio Honda
Also filed as: HONDA YOSHIO
17 granted patents·11 pending applications·304 citations·filing 2001–2023
92Inventor score
Files withNIHON MEDIPHYSICS CO LTD6IDEMITSU KOSAN CO3SUMCO CORP3UNIV NAGOYA NAT UNIV CORP3AXELSSON LEIF2
Top patents by PatentIndex Score
28 records- 0190US6635901B2Semiconductor device including an InGaAIN layerSAWAKI NOBUHIKO·Filed 2001·Granted Oct 21, 2003·118 cites·10 claims
- 0285US8036224B2Method and system for efficient routing in Ad Hoc networksERICSSON TELEFON AB L M·Filed 2003·Granted Oct 11, 2011·50 cites·29 claims
- 0384US8553560B2Predictive ad-hoc network routingAXELSSON LEIF·Filed 2003·Granted Oct 8, 2013·50 cites·41 claims
- 0483US8218550B2Method and system for routing traffic in ad hoc networksAXELSSON LEIF·Filed 2003·Granted Jul 10, 2012·47 cites·19 claims
- 0577US6888867B2Semiconductor laser device and fabrication method thereofSHARP KK·Filed 2002·Granted May 3, 2005·14 cites·19 claims
- 0672US2023364275A1METHOD FOR PRODUCING Ac-225 SOLUTION AND METHOD FOR PRODUCING MEDICINE USING Ac-225 SOLUTIONNIHON MEDIPHYSICS CO LTD·Filed 2023·Application pending·0 cites
- 0770US11752223B2Method for producing Ac-225 solution and method for producing medicine using Ac-225 solutionNIHON MEDIPHYSICS CO LTD·Filed 2022·Granted Sep 12, 2023·0 cites·5 claims
- 0870US11551826B2Method for producing 225AcNIHON MEDIPHYSICS CO LTD·Filed 2022·Granted Jan 10, 2023·0 cites·9 claims
- 0969US6927423B2Semiconductor element structure, electron emitter and method for fabricating a semiconductor element structureUNIV NAGOYA·Filed 2003·Granted Aug 9, 2005·8 cites·16 claims
- 1067US12009206B2Vapor phase epitaxial growth deviceUNIV NAGOYA NAT UNIV CORP·Filed 2023·Granted Jun 11, 2024·0 cites·10 claims
- 1166US12179149B2Method for purifying 226Ra-containing solution, method for producing 226Ra target, and method for producing 225AcNIHON MEDIPHYSICS CO LTD·Filed 2020·Granted Dec 31, 2024·0 cites·9 claims
- 1263US6806115B2Semiconductor light emitting device and method for producing the sameSHARP KK·Filed 2002·Granted Oct 19, 2004·15 cites·11 claims
- 1361US2024084419A1RECOVERY METHOD OF Ra-226, PRODUCTION METHOD OF Ra-226 SOLUTION, AND PRODUCTION METHOD OF Ac-225 SOLUTIONNIHON MEDIPHYSICS CO LTD·Filed 2021·Application pending·0 cites
- 1457US8338853B2Substrate for forming light-emitting layer, light emitter and light-emitting substanceKIYAMA AKIRA·Filed 2006·Granted Dec 25, 2012·2 cites·12 claims
- 1556US2023310665A1Method for producing 225ac solutionNIHON MEDIPHYSICS CO LTD·Filed 2021·Application pending·0 cites
- 1655US2025241093A1Reflective electrode for an emitting deviceIDEMITSU KOSAN CO·Filed 2022·Application pending·0 cites
- 1751US11371165B2Vapor phase epitaxial growth deviceNATIONAL UNIV CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH SYSTEM·Filed 2019·Granted Jun 28, 2022·0 cites·16 claims
- 1850US11591717B2Vapor phase epitaxial growth deviceUNIV NAGOYA NAT UNIV CORP·Filed 2018·Granted Feb 28, 2023·0 cites·14 claims
- 1949US12439742B2Light emitting device with electrode having specified molar ratio of magnesium to zincIDEMITSU KOSAN CO·Filed 2019·Granted Oct 7, 2025·0 cites·19 claims
- 2049US2024347343A1Nitride semiconductor device, nitride semiconductor substrate, and method of manufacturing nitride semiconductor deviceNATIONAL UNIV CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH SYSTEM·Filed 2022·Application pending·0 cites
- 2149US2015214423A1Method for manufacturing optical device and optical deviceTOKYO ELECTRON LTD·Filed 2014·Application pending·0 cites
- 2247US10777704B2Manufacturing method for group III nitride semiconductor substrate and group III nitride semiconductor substrateSUMCO CORP·Filed 2016·Granted Sep 15, 2020·0 cites·29 claims
- 2343US2021210340A1Group iii nitride semiconductor substrate and manufacturing method thereofSUMCO CORP·Filed 2019·Application pending·0 cites
- 2442US7355815B2Recording medium cartridge and recording/reproducing apparatus thereofFUJIFILM CORP·Filed 2003·Granted Apr 8, 2008·0 cites·20 claims
- 2542US2021151314A1Method for manufacturing group iii nitride semiconductor substrateSUMCO CORP·Filed 2018·Application pending·0 cites
- 2640US2022393073A1Laminate and semiconductor deviceIDEMITSU KOSAN CO·Filed 2020·Application pending·0 cites
- 2739US2005245054A1Method for producing a nitride semiconductor crystal layer, nitride semiconductor crystal layer and substrate for producing the sameUNIV NAGOYA NAT UNIV CORP·Filed 2004·Application pending·0 cites
- 2833US2015214429A1Method for manufacturing rod-type light emitting device and rod-type light emitting deviceTOKYO ELECTRON LTD·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →