Inventor · disambiguated record
Yong-Tian Hou
Also filed as: HOU YONG · HOU YONG-TIAN
18 granted patents·12 pending applications·232 citations·filing 2004–2024
93Inventor score
Files withTAIWAN SEMICONDUCTOR MFG10QUALCOMM INC3TAIWAN SEMICONDUCTOR MFG CO LTD3UNITED MICROELECTRONICS CORP3AGENCY SCIENCE TECH & RES2
Top patents by PatentIndex Score
30 records- 0194US7871915B2Method for forming metal gates in a gate last processTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Jan 18, 2011·38 cites·15 claims
- 0294US7002175B1Method of making resonant tunneling diodes and CMOS backend-process-compatible three dimensional (3-D) integrationAGENCY SCIENCE TECH & RES·Filed 2004·Granted Feb 21, 2006·108 cites·40 claims
- 0392US7812414B2Hybrid process for forming metal gatesTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Oct 12, 2010·20 cites·13 claims
- 0490US8679962B2Integrated circuit metal gate structure and method of fabricationHOU YONG-TIAN·Filed 2008·Granted Mar 25, 2014·17 cites·15 claims
- 0586US7465634B2Method of forming integrated circuit devices having n-MOSFET and p-MOSFET transistors with elevated and silicided source/drain structuresTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Dec 16, 2008·14 cites·20 claims
- 0685US2024379811A1Integrated circuit metal gate structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0777US8536660B2Hybrid process for forming metal gates of MOS devicesHSU PENG-FU·Filed 2008·Granted Sep 17, 2013·8 cites·17 claims
- 0877US7989321B2Semiconductor device gate structure including a gettering layerTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Aug 2, 2011·5 cites·18 claims
- 0976US7994051B2Implantation method for reducing threshold voltage for high-K metal gate deviceTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Aug 9, 2011·4 cites·13 claims
- 1075US7531399B2Semiconductor devices and methods with bilayer dielectricsTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted May 12, 2009·5 cites·17 claims
- 1173US8324090B2Method to improve dielectric quality in high-k metal gate technologyMASUOKA YURI·Filed 2008·Granted Dec 4, 2012·6 cites·21 claims
- 1269US9309570B2Method and device for genetic map construction, method and device for haplotype analysisSONG LUTING·Filed 2012·Granted Apr 12, 2016·3 cites·17 claims
- 1366US8258546B2High-k metal gate deviceHUNG CHENG-LUNG·Filed 2011·Granted Sep 4, 2012·2 cites·19 claims
- 1465US8836038B2CMOS dual metal gate semiconductor deviceHOU YONG-TIAN·Filed 2010·Granted Sep 16, 2014·2 cites·19 claims
- 1562US11004950B2Integrated circuit metal gate structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 11, 2021·0 cites·20 claims
- 1658US2024243179A1Semiconductor device and manufacturing method thereofHUAWEI DIGITAL POWER TECH CO LTD·Filed 2024·Application pending·0 cites
- 1755US10164045B2Integrated circuit metal gate structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Dec 25, 2018·0 cites·19 claims
- 1854US9397184B2Semiconductor device having metal gate and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2015·Granted Jul 19, 2016·0 cites·7 claims
- 1952US8384159B2Semiconductor devices and methods with bilayer dielectricsTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Feb 26, 2013·0 cites·19 claims
- 2049US2015021681A1Semiconductor device having metal gate and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2013·Application pending·0 cites
- 2149US2015372114A1Semiconductor device having metal gate and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2015·Application pending·0 cites
- 2248US2024023180A1Techniques for recovery from a dual connectivity data stallQUALCOMM INC·Filed 2020·Application pending·0 cites
- 2346US2023354156A1Cell selection, cell reselection, and public land mobile network (plmn) selection for shared network deploymentQUALCOMM TECHNOLOGIES INC·Filed 2021·Application pending·0 cites
- 2445US12452364B2User equipment signaling of customize ringing signal capabilityQUALCOMM INC·Filed 2021·Granted Oct 21, 2025·0 cites·17 claims
- 2544US2010044804A1Novel high-k metal gate structure and method of makingTAIWAN SEMICONDUCTOR MFG·Filed 2009·Application pending·0 cites
- 2643US2008146012A1Novel method to adjust work function by plasma assisted metal incorporated dielectricTAIWAN SEMICONDUCTOR MFG·Filed 2007·Application pending·0 cites
- 2741US2024007910A1Candidate cell detection for standalone modeQUALCOMM INC·Filed 2021·Application pending·0 cites
- 2841US2015299753A1Whole genome amplification method and application thereofWU KUI·Filed 2012·Application pending·0 cites
- 2938US2008001237A1Semiconductor device having nitrided high-k gate dielectric and metal gate electrode and methods of forming sameTAIWAN SEMICONDUCTOR MFG·Filed 2006·Application pending·0 cites
- 3034US2005056827A1CMOS compatible low band offset double barrier resonant tunneling diodeAGENCY SCIENCE TECH & RES·Filed 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →