Inventor · disambiguated record
You Li
Also filed as: LI YOU · Li You Bing
26 granted patents·41 citations·filing 2014–2023
93Inventor score
Top patents by PatentIndex Score
26 records- 0195US10008491B1Low capacitance electrostatic discharge (ESD) devicesGLOBALFOUNDRIES INC·Filed 2017·Granted Jun 26, 2018·14 cites·20 claims
- 0291US11804481B2Fin-based and bipolar electrostatic discharge devicesGLOBALFOUNDRIES US INC·Filed 2021·Granted Oct 31, 2023·2 cites·19 claims
- 0390US10096587B1Fin-based diode structures with a realigned feature layoutGLOBALFOUNDRIES INC·Filed 2017·Granted Oct 9, 2018·7 cites·20 claims
- 0488US10290626B1High voltage electrostatic discharge (ESD) bipolar integrated in a vertical field-effect transistor (VFET) technology and method for producing the sameGLOBALFOUNDRIES INC·Filed 2018·Granted May 14, 2019·5 cites·18 claims
- 0588US9391065B1Electrostatic discharge and passive structures integrated in a vertical gate fin-type field effect diodeIBM·Filed 2015·Granted Jul 12, 2016·5 cites·7 claims
- 0678US11349304B2Structure and method for controlling electrostatic discharge (ESD) event in resistor-capacitor circuitGLOBALFOUNDRIES US INC·Filed 2020·Granted May 31, 2022·1 cites·18 claims
- 0776US12107083B2Fin-based and bipolar electrostatic discharge devicesGLOBALFOUNDRIES US INC·Filed 2023·Granted Oct 1, 2024·0 cites·18 claims
- 0875US10361293B1Vertical fin-type devices and methodsGLOBALFOUNDRIES INC·Filed 2018·Granted Jul 23, 2019·2 cites·16 claims
- 0974US11335674B2Diode triggered silicon controlled rectifier (SCR) with hybrid diodesGLOBALFOUNDRIES US INC·Filed 2019·Granted May 17, 2022·1 cites·20 claims
- 1070US11769767B2Diode triggered silicon controlled rectifierGLOBALFOUNDRIES US INC·Filed 2022·Granted Sep 26, 2023·0 cites·16 claims
- 1169US11791626B2Electrostatic discharge clamp structuresGLOBALFOUNDRIES US INC·Filed 2021·Granted Oct 17, 2023·0 cites·20 claims
- 1269US9704852B2Electrostatic discharge and passive structures integrated in a vertical gate fin-type field effect diodeGLOBALFOUNDRIES INC·Filed 2016·Granted Jul 11, 2017·1 cites·14 claims
- 1369US9425185B2Self-healing electrostatic discharge power clampGLOBALFOUNDRIES INC·Filed 2014·Granted Aug 23, 2016·2 cites·16 claims
- 1465US12068308B2Integrated circuit structure with avalanche junction to doped semiconductor over semiconductor wellGLOBALFOUNDRIES US INC·Filed 2022·Granted Aug 20, 2024·0 cites·20 claims
- 1564US9882377B2Electrostatic discharge protection solutionsIBM·Filed 2015·Granted Jan 30, 2018·1 cites·19 claims
- 1662US11444076B2Integrated circuit structure with avalanche junction to doped semiconductor over semiconductor wellGLOBALFOUNDRIES US INC·Filed 2020·Granted Sep 13, 2022·0 cites·14 claims
- 1757US11171132B2Bi-directional breakdown silicon controlled rectifiersGLOBALFOUNDRIES US INC·Filed 2019·Granted Nov 9, 2021·0 cites·18 claims
- 1856US10297589B2Electrostatic discharge and passive structures integrated in a vertical gate fin-type field effect diodeGLOBALFOUNDRIES INC·Filed 2017·Granted May 21, 2019·0 cites·15 claims
- 1955US11289471B2Electrostatic discharge deviceGLOBALFOUNDRIES US INC·Filed 2020·Granted Mar 29, 2022·0 cites·20 claims
- 2054US11201466B2Electrostatic discharge clamp structuresGLOBALFOUNDRIES US INC·Filed 2018·Granted Dec 14, 2021·0 cites·18 claims
- 2151US12287721B2Storage management and usage optimization using workload trendsIBM·Filed 2022·Granted Apr 29, 2025·0 cites·20 claims
- 2247US11631759B2Electrostatic discharge protection devices and methods for fabricating electrostatic discharge protection devicesGLOBALFOUNDRIES US INC·Filed 2021·Granted Apr 18, 2023·0 cites·20 claims
- 2344US10692852B2Silicon-controlled rectifiers with wells laterally isolated by trench isolation regionsGLOBALFOUNDRIES INC·Filed 2018·Granted Jun 23, 2020·0 cites·20 claims
- 2444US10541236B2Electrostatic discharge devices with reduced capacitanceGLOBALFOUNDRIES INC·Filed 2018·Granted Jan 21, 2020·0 cites·14 claims
- 2542US10347622B2Silicon-controlled rectifiers having a cathode coupled by a contact with a diode triggerGLOBALFOUNDRIES INC·Filed 2017·Granted Jul 9, 2019·0 cites·15 claims
- 2641US10741685B2Semiconductor devices having a fin channel arranged between source and drift regions and methods of manufacturing the sameGLOBALFOUNDRIES INC·Filed 2018·Granted Aug 11, 2020·0 cites·14 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →