Inventor · disambiguated record
Yoshihisa Matsubara
Also filed as: MATSUBARA YOSHIHISA
66 granted patents·24 pending applications·754 citations·filing 1993–2025
99Inventor score
Files withNEC CORP36NEC ELECTRONICS CORP23RENESAS ELECTRONICS CORP13MATSUBARA YOSHIHISA6TOKYO ELECTRON LTD5
Top patents by PatentIndex Score
90 records- 0192US6037625ASemiconductor device with salicide structure and fabrication method thereofNEC CORP·Filed 1998·Granted Mar 14, 2000·76 cites·6 claims
- 0289US6492735B1Semiconductor device with alloy film between barrier metal and interconnectNEC CORP·Filed 2000·Granted Dec 10, 2002·47 cites·8 claims
- 0387US8193582B2Semiconductor device and method of manufacturing the sameMATSUBARA YOSHIHISA·Filed 2009·Granted Jun 5, 2012·13 cites·14 claims
- 0482US6091081AInsulating film comprising amorphous carbon fluoride, a semiconductor device comprising such an insulating filmNEC CORP·Filed 1997·Granted Jul 18, 2000·55 cites·13 claims
- 0581US7986012B2Semiconductor device and process for manufacturing sameRENESAS ELECTRONICS CORP·Filed 2008·Granted Jul 26, 2011·8 cites·5 claims
- 0679US10418323B2Semiconductor device and manufacturing method thereofRENESAS ELECTRONICS CORP·Filed 2016·Granted Sep 17, 2019·3 cites·9 claims
- 0779US9837335B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2016·Granted Dec 5, 2017·2 cites·4 claims
- 0879US6277735B1Method for forming a refractory metal silicide layerNEC CORP·Filed 2000·Granted Aug 21, 2001·22 cites·34 claims
- 0978US6573607B2Semiconductor device and manufacturing method thereofNEC ELECTRONICS CORP·Filed 2001·Granted Jun 3, 2003·17 cites·12 claims
- 1078US6149730AApparatus for forming films of a semiconductor device, a method of manufacturing a semiconductor device, and a method of forming thin films of a semiconductorNEC CORP·Filed 1998·Granted Nov 21, 2000·50 cites·16 claims
- 1178US5563100AFabrication method of semiconductor device with refractory metal silicide formation by removing native oxide in hydrogenNEC CORP·Filed 1994·Granted Oct 8, 1996·41 cites·18 claims
- 1277US10411025B2Semiconductor device and manufacturing method thereofRENESAS ELECTRONICS CORP·Filed 2018·Granted Sep 10, 2019·2 cites·3 claims
- 1376US7645692B2Semiconductor device and method of manufacturing the sameNEC ELECTRONICS CORP·Filed 2007·Granted Jan 12, 2010·5 cites·5 claims
- 1475US6379782B2Semiconductor device formed with metal wiring on a wafer by chemical mechanical polishing, and method of manufacturing the sameNEC CORP·Filed 2001·Granted Apr 30, 2002·21 cites·3 claims
- 1574US8278760B2Semiconductor integrated circuit and method for manufacturing same, and maskMATSUBARA YOSHIHISA·Filed 2007·Granted Oct 2, 2012·3 cites·4 claims
- 1674US8102053B2Displacement detection pattern for detecting displacement between wiring and via plug, displacement detection method, and semiconductor deviceMATSUBARA YOSHIHISA·Filed 2008·Granted Jan 24, 2012·4 cites·6 claims
- 1774US6268090B1Process for manufacturing semiconductor device and exposure maskNEC CORP·Filed 2000·Granted Jul 31, 2001·14 cites·7 claims
- 1873US8802562B2Semiconductor device including copper wiring and via wiring having length longer than width thereof and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2013·Granted Aug 12, 2014·2 cites·10 claims
- 1973US8519389B2Semiconductor device, method of manufacturing the same, and method of designing the sameMATSUBARA YOSHIHISA·Filed 2011·Granted Aug 27, 2013·3 cites·9 claims
- 2073US6309970B1Method of forming multi-level copper interconnect with formation of copper oxide on exposed copper surfaceNEC CORP·Filed 1999·Granted Oct 30, 2001·36 cites·18 claims
- 2172US7989952B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2009·Granted Aug 2, 2011·3 cites·19 claims
- 2272US7365431B2Semiconductor device having multilayer structure and method for manufacturing thereofNEC ELECTRONICS CORP·Filed 2004·Granted Apr 29, 2008·17 cites·14 claims
- 2371US8664010B2Semiconductor device and manufacturing method of the semiconductor deviceMATSUBARA YOSHIHISA·Filed 2011·Granted Mar 4, 2014·2 cites·11 claims
- 2470US7504315B2Method of transporting semiconductor device and method of manufacturing semiconductor deviceRENESAS TECH CORP·Filed 2004·Granted Mar 17, 2009·12 cites·16 claims
- 2569US10008435B2Semiconductor device and method of manufacturing semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2017·Granted Jun 26, 2018·1 cites·18 claims
- 2669US6372628B1Insulating film comprising amorphous carbon fluoride, a semiconductor device comprising such an insulating film, and a method for manufacturing the semiconductor deviceNEC CORP·Filed 2000·Granted Apr 16, 2002·11 cites·3 claims
- 2768US6514853B1Semiconductor device and a manufacturing process thereforNEC CORP·Filed 2000·Granted Feb 4, 2003·12 cites·7 claims
- 2867US7785986B2Method of manufacturing semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2009·Granted Aug 31, 2010·2 cites·15 claims
- 2964US6274417B1Method of forming a semiconductor deviceNEC CORP·Filed 2000·Granted Aug 14, 2001·10 cites·22 claims
- 3062US7148575B2Semiconductor device having bonding pad above low-k dielectric filmNEC ELECTRONICS CORP·Filed 2004·Granted Dec 12, 2006·9 cites·7 claims
- 3162US6936926B2Wiring structure in a semiconductor deviceNEC CORP·Filed 2003·Granted Aug 30, 2005·8 cites·8 claims
- 3261US6096638AMethod for forming a refractory metal silicide layerNEC CORP·Filed 1996·Granted Aug 1, 2000·17 cites·38 claims
- 3360US6890852B2Semiconductor device and manufacturing method of the sameNEC ELECTRONICS CORP·Filed 2003·Granted May 10, 2005·9 cites·3 claims
- 3459US5897365AProcess of fabricating semiconductor device having low-resistive titanium silicide layer free from short-circuit and leakage currentNEC CORP·Filed 1997·Granted Apr 27, 1999·18 cites·13 claims
- 3556US10115656B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2017·Granted Oct 30, 2018·0 cites·3 claims
- 3656US5569618AMethod for planarizing insulating filmNEC CORP·Filed 1993·Granted Oct 29, 1996·25 cites·9 claims
- 3756US2025273621A1Substrate processing method, plasma processing apparatus, and substrate processing systemTOKYO ELECTRON LTD·Filed 2025·Application pending·0 cites
- 3855US6329295B1Semiconductor device capable of having amorphous carbon fluoride film of low dielectric constant as interlayer insulation material and method of manufacturing the sameNEC CORP·Filed 2000·Granted Dec 11, 2001·5 cites·8 claims
- 3955US6037250AProcess for forming multilevel interconnection structureNEC CORP·Filed 1999·Granted Mar 14, 2000·20 cites·7 claims
- 4055US2014306345A1Semiconductor device including copper wiring and via wiring having length longer than width thereof and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2014·Application pending·0 cites
- 4154US9035404B2Semiconductor device and manufacturing method of the semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2013·Granted May 19, 2015·0 cites·16 claims
- 4254US8598704B2Semiconductor deviceRENESAS ELECTRONIC CORP·Filed 2013·Granted Dec 3, 2013·0 cites·6 claims
- 4354US6458690B2Method for manufacturing a multilayer interconnection structureNEC CORP·Filed 2001·Granted Oct 1, 2002·6 cites·7 claims
- 4453US6127267AFabrication method of semiconductor device equipped with silicide layerNEC CORP·Filed 1998·Granted Oct 3, 2000·14 cites·20 claims
- 4553US2024250064A1Substrate processing methodTOKYO ELECTRON LTD·Filed 2022·Application pending·0 cites
- 4652US8598703B2Semiconductor deviceMATSUBARA YOSHIHISA·Filed 2011·Granted Dec 3, 2013·0 cites·29 claims
- 4752US7538428B2Semiconductor deviceNEC ELECTRONICS CORP·Filed 2006·Granted May 26, 2009·0 cites·7 claims
- 4852US2008197494A1Semiconductor device including copper wiring and via wiring having length longer than width thereof and method of manufacturing the sameNEC ELECTRONICS CORP·Filed 2008·Application pending·0 cites
- 4951US6104092ASemiconductor device having amorphous carbon fluoride film of low dielectric constant as interlayer insulation materialNEC CORP·Filed 1998·Granted Aug 15, 2000·13 cites·10 claims
- 5051US5883003AMethod for producing a semiconductor device comprising a refractory metal silicide layerNEC CORP·Filed 1995·Granted Mar 16, 1999·13 cites·3 claims
Showing the top 50 of 90 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →