Inventor · disambiguated record
Yoshihide Senzaki
Also filed as: SENZAKI YOSHIHIDE
20 granted patents·20 pending applications·2,003 citations·filing 1992–2013
96Inventor score
Top patents by PatentIndex Score
40 records- 0198US6713846B1Multilayer high κ dielectric filmsAVIZA TECH INC·Filed 2002·Granted Mar 30, 2004·230 cites·13 claims
- 0298US6238734B1Liquid precursor mixtures for deposition of multicomponent metal containing materialsAIR PROD & CHEM·Filed 1999·Granted May 29, 2001·570 cites·11 claims
- 0397US6537613B1Process for metal metalloid oxides and nitrides with compositional gradientsAIR PROD & CHEM·Filed 2000·Granted Mar 25, 2003·155 cites·28 claims
- 0496US7205247B2Atomic layer deposition of hafnium-based high-k dielectricAVIZA TECH INC·Filed 2004·Granted Apr 17, 2007·563 cites·13 claims
- 0596US5372849AChemical vapor deposition of iron, ruthenium, and osmiumMINNESOTA MINING & MFG·Filed 1994·Granted Dec 13, 1994·170 cites·9 claims
- 0689US6503561B1Liquid precursor mixtures for deposition of multicomponent metal containing materialsAIR PROD & CHEM·Filed 2000·Granted Jan 7, 2003·40 cites·23 claims
- 0786US5314727AChemical vapor deposition of iron, ruthenium, and osmiumMINNESOTA MINING & MFG CO REGE·Filed 1992·Granted May 24, 1994·63 cites·17 claims
- 0882US9011973B2Methods for depositing oxygen deficient metal filmsAPPLIED MATERIALS INC·Filed 2013·Granted Apr 21, 2015·2 cites·16 claims
- 0981US5744192AMethod of using water vapor to increase the conductivity of cooper desposited with cu(hfac)TMVSSHARP MICROELECT TECH INC·Filed 1996·Granted Apr 28, 1998·54 cites·26 claims
- 1076US7335569B2In-situ formation of metal insulator metal capacitorsAVIZA TECH INC·Filed 2003·Granted Feb 26, 2008·15 cites·16 claims
- 1175US6500499B1Deposition and annealing of multicomponent ZrSnTi and HfSnTi oxide thin films using solventless liquid mixture of precursorsAIR PROD & CHEM·Filed 2000·Granted Dec 31, 2002·14 cites·18 claims
- 1275US5767301APrecursor with (alkyloxy)(alkyl)-silylolefin ligand to deposit copperSHARP MICROELECT TECH INC·Filed 1997·Granted Jun 16, 1998·40 cites·29 claims
- 1373US6090960APrecursor with (methoxy) (methyl) silylolefin ligand to deposit copper and method sameSHARP LAB OF AMERICA INC·Filed 1997·Granted Jul 18, 2000·16 cites·30 claims
- 1469US6616972B1Synthesis of metal oxide and oxynitrideAIR PROD & CHEM·Filed 1999·Granted Sep 9, 2003·27 cites·17 claims
- 1568US7470470B2System and method for forming multi-component dielectric filmsAVIZA TECH INC·Filed 2004·Granted Dec 30, 2008·12 cites·4 claims
- 1662US9269574B2Methods of fabricating dielectric films from metal amidinate precursorsHUNG STEVEN·Filed 2013·Granted Feb 23, 2016·1 cites·7 claims
- 1761US6319567B1Synthesis of tantalum nitrideAIR PROD & CHEM·Filed 1999·Granted Nov 20, 2001·18 cites·8 claims
- 1858US6096913AProduction of metal-ligand complexesAIR PROD & CHEM·Filed 1999·Granted Aug 1, 2000·7 cites·22 claims
- 1955US6933011B2Two-step atomic layer deposition of copper layersAVIZA TECH INC·Filed 2003·Granted Aug 23, 2005·4 cites·17 claims
- 2053US2008128772A1In-Situ Formation of Metal Insulator Metal CapacitorsSENZAKI YOSHIHIDE·Filed 2008·Application pending·0 cites
- 2150US2006013955A1Deposition of ruthenium and/or ruthenium oxide filmsSENZAKI YOSHIHIDE·Filed 2005·Application pending·0 cites
- 2248US2005255243A1System and method for forming multi-component dielectric filmsAVIZA TECH INC·Filed 2005·Application pending·0 cites
- 2344US2005233156A1System and method for forming multi-component dielectric filmsAVIZA TECH INC·Filed 2005·Application pending·0 cites
- 2443US2004182309A1Low temperature deposition of silicon based thin films by single-wafer hot-wall rapid thermal chemical vapor depositionFiled 2003·Application pending·0 cites
- 2543US2005070126A1System and method for forming multi-component dielectric filmsFiled 2004·Application pending·0 cites
- 2643US2005227017A1Low temperature deposition of silicon nitrideSENZAKI YOSHIHIDE·Filed 2004·Application pending·0 cites
- 2742US6046364ARegeneration of metal CVD precursorsAIR PROD & CHEM·Filed 1998·Granted Apr 4, 2000·2 cites·16 claims
- 2841US2006110930A1Direct liquid injection system and method for forming multi-component dielectric filmsSENZAKI YOSHIHIDE·Filed 2005·Application pending·0 cites
- 2940US2005153571A1Nitridation of high-k dielectric filmsFiled 2004·Application pending·0 cites
- 3040US2005239297A1Growth of high-k dielectrics by atomic layer depositionSENZAKI YOSHIHIDE·Filed 2004·Application pending·0 cites
- 3139US2005023628A1Multilayer high k dielectric films and method of making the sameFiled 2004·Application pending·0 cites
- 3239US2005062136A1Multilayer high k dielectric films and method of making the sameFiled 2004·Application pending·0 cites
- 3338US2005012089A1Metal organic chemical vapor deposition and atomic layer deposition of metal oxynitride and metal silicon oxynitrideFiled 2003·Application pending·0 cites
- 3437US2003216041A1In-situ thermal chamber cleaningFiled 2002·Application pending·0 cites
- 3536US2006178019A1Low temperature deposition of silicon oxides and oxynitridesAVIZA TECH INC·Filed 2003·Application pending·0 cites
- 3636US2006051506A1Nitridation of high-k dielectricsSENZAKI YOSHIHIDE·Filed 2004·Application pending·0 cites
- 3736US2006228888A1Atomic layer deposition of high k metal silicatesLEE SANG-IN·Filed 2003·Application pending·0 cites
- 3836US2006258078A1Atomic layer deposition of high-k metal oxidesLEE SANG-IN·Filed 2003·Application pending·0 cites
- 3934US2005175789A1Method for energy-assisted atomic layer deposition and removalFiled 2003·Application pending·0 cites
- 4030US2003104707A1System and method for improved thin dielectric filmsFiled 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →