System and method for forming multi-component dielectric films

Abstract

The present invention provides systems and methods for mixing precursors such that a mixture of precursors are present together in a chamber during a single pulse step in an atomic layer deposition (ALD) process to form a multi-component film. The precursors are comprised of at least one different chemical component, and such different components will form a mono-layer to produce a multi-component film. In a further aspect of the present invention, a dielectric film having a composition gradient is provided.

1 . A method of forming a film on a surface of a substrate, characterized in that: 
 two or more precursors, each of the precursors containing at least one different chemical component, are conveyed to a process chamber together and form a mono-layer on the surface of the substrate, said mono-layer containing each of the separate chemical components, said process chamber being configured to house a plurality of substrates.    
     
     
         2 . The method of  claim 1  wherein said substrate surface is selected from the group consisting of silicon, plastics, polymers, metals, alloys, organics, inorganics, or mixtures thereof.  
     
     
         3 . The method of  claim 1  where the precursors have the formula:  
         M(L) x    
       where M is a metal selected from the group of: Ti, Zr, Hf, Ta, W, Mo, Ni, Si, Cr, Y, La, C, Nb, Zn, Fe, Cu, Al, Sn, Ce, Pr, Sm, Eu, Th, Dy, Ho, Er, Tm, Yb, Lu, Ga, In, Ru, Mn, Sr, Ba, Ca, V, Co, Os, Rh, Ir, Pd, Pt, Bi, Sn, Pb, Tl, Ge or mixtures thereof; where L is a ligand selected from the group consisting of amine, amides, alkoxides, halogens, hydrides, alkyls, asides, nitrates, nitrites, cyclopentadienyls, carbonyl, carboxylates, diketonates, alkenes, alkynes, or a substituted analogs thereof, and combinations thereof; and where x is an integer less than or equal to the valence number for M.  
     
     
         4 . The method of  claim 1  further comprising supplying at least one reactant that reacts with said monolayer.  
     
     
         5 . The method of  claim 4 , wherein said at least one reactant is delivered sequentially or simultaneously with the precursors.  
     
     
         6 . The method of  claim 4 , wherein said at least one reactant is a nitridating reactant, reducing reactant, oxidizing reactant, or a mixture thereof.  
     
     
         7 . The method of  claim 6 , wherein said nitridating reactant is selected from the group consisting of ammonia, deuterated ammonia, 15N-ammonia, amines or amides, hydrazines, alkyl hydrazines, nitrogen gas, nitric oxide, nitrous oxide, nitrogen radicals, N-oxides, or mixtures thereof.  
     
     
         8 . The method of  claim 6 , wherein said oxidizing reactant is selected from the group consisting of ozone, oxygen, singlet oxygen, triplet oxygen, atomic oxygen, water, peroxides, air, nitrous oxide, nitric oxide, H 2 O 2 , and mixtures thereof.  
     
     
         9 . A method for forming a multi-component film on a surface of a substrate comprising the steps of: 
 vaporizing two or more precursors, each of the precursors containing at least one metal or metalloid component;    conveying the two or more precursors into a process chamber configured to house a plurality of substrates, wherein the precursors are present together in the process chamber;    forming a mono-layer on the surface of the substrate, said mono-layer containing each of the metal or metalloid components; and    purging said process chamber.    
     
     
         10 . The method of  claim 9  wherein said forming step is carried out at a temperature in the range of approximately 20 to 800 C.  
     
     
         11 . The method of  claim 9  wherein said process chamber is at a pressure in the range of approximately 0.001 mTorr to 600 Torr.  
     
     
         12 . The method of  claim 9  wherein the step of conveying further includes mixing the two or more precursors and conveying the mixture of precursors into the process chamber.  
     
     
         13 . The method of  claim 9 , wherein said purging step further comprises introducing a carrier gas to evacuate the precursors from the chamber.  
     
     
         14 . The method of  claim 9  further comprising conveying a reactant gas to the process chamber, wherein the reactant gas contacts the mono-layer formed on the surface of the substrate.  
     
     
         15 . The method of  claim 14  wherein the gas flow rate to the process chamber is in the range of approximately 0 to 20,000 sccm.  
     
     
         16 . The method of  claim 9  where the precursors have the formula:  
         M(L) x    
       where M is a metal selected from the group of: Ti, Zr, Hf, Ta, W, Mo, Ni, Si, Cr, Y, La, C, Nb, Zn, Fe, Cu, Al, Sn, Ce, Pr, Sm, Eu, Th, Dy, Ho, Er, Tm, Yb, Lu, Ga, In, Ru, Mn, Sr, Ba, Ca, V, Co, Os, Rh, Ir, Pd, Pt, Bi, Sn, Pb, Tl, Ge or mixtures thereof; where L is a ligand selected from the group consisting of amine, amides, alkoxides, halogens, hydrides, alkyls, asides, nitrates, nitrites, cyclopentadienyls, carbonyl, carboxylates, diketonates, alkenes, alkynes, or a substituted analogs thereof, and combinations thereof; and where x is an integer less than or equal to the valence number for M.  
     
     
         17 . A system for atomic layer deposition comprising: 
 at least a first vaporizer containing a first deposition precursor for deposition;    a least a second vaporizer containing a second deposition precursor for deposition;    a process chamber configured to house a plurality of substrates and adapted to carry out an atomic layer deposition process; and    a manifold, said manifold being coupled to said first and second vaporizers and to said process chamber, said manifold being adapted to mix and convey the first and second deposition precursors to said process chamber.    
     
     
         18 . The system of  claim 17 , wherein said process chamber further comprises: 
 a gas inlet coupled to said manifold; and    an inlet for supplying at least one reactant gas, wherein said inlet provides said at least one reactant in said process chamber in-situ in either sequential or simultaneous manner.    
     
     
         19 . The method of  claim 1  wherein said monolayer is selected from the group consisting of metals and metal, metal alloy or mix metal oxides, silicates, nitrides and oxynitrides.  
     
     
         20 . The method of  claim 1  wherein each said monolayer is compositionally variable and electrically and physically compatible with the adjacent said monolayers.  
     
     
         21 . A method of forming a film on the surface of a substrate, characterized in that: 
 two or more precursors, each of the precursors containing at least one different chemical component, are conveyed to a process chamber together and form a mono-layer on the surface of the substrate, said process chamber being configured to house a plurality of substrates and wherein the amount of each of the precursors conveyed to the process chamber is selectively controlled such that a desired composition gradient of one of more of the chemical components is formed in the film.