Inventor · disambiguated record
Yongjun Shi
Also filed as: SHI YONGJUN
16 granted patents·2 pending applications·40 citations·filing 2017–2022
88Inventor score
Files withGLOBALFOUNDRIES INC10DELL PRODUCTS LP5GLOBALFOUNDRIES US INC1UNIV CHINA PETROLEUM EAST CHINA1UNIV QINGDAO TECHNOLOGY1
Top patents by PatentIndex Score
18 records- 0197US10249538B1Method of forming vertical field effect transistors with different gate lengths and a resulting structureGLOBALFOUNDRIES INC·Filed 2017·Granted Apr 2, 2019·22 cites·19 claims
- 0283US11093232B2Microservice update systemDELL PRODUCTS LP·Filed 2019·Granted Aug 17, 2021·8 cites·20 claims
- 0383US10068902B1Integrated circuit structure incorporating non-planar field effect transistors with different channel region heights and methodGLOBALFOUNDRIES INC·Filed 2017·Granted Sep 4, 2018·4 cites·4 claims
- 0482US10804199B2Self-aligned chamferless interconnect structures of semiconductor devicesGLOBALFOUNDRIES INC·Filed 2018·Granted Oct 13, 2020·4 cites·10 claims
- 0581US11931671B2Three-stage tubular T-shaped degassing device with microbubble axial flow and spiral flow fieldsUNIV QINGDAO TECHNOLOGY·Filed 2021·Granted Mar 19, 2024·1 cites·10 claims
- 0670US10297675B1Dual-curvature cavity for epitaxial semiconductor growthGLOBALFOUNDRIES INC·Filed 2017·Granted May 21, 2019·1 cites·13 claims
- 0755US12058257B2Data storage method, data read method, electronic device, and program productDELL PRODUCTS LP·Filed 2022·Granted Aug 6, 2024·0 cites·20 claims
- 0855US10712959B2Method, device and computer program product for storing dataDELL PRODUCTS LP·Filed 2019·Granted Jul 14, 2020·0 cites·20 claims
- 0951US2019181243A1Dual-curvature cavity for epitaxial semiconductor growthGLOBALFOUNDRIES INC·Filed 2019·Application pending·0 cites
- 1050US11872505B2Separation device with two-stage gas-liquid mixture and conical spiral fieldsUNIV CHINA PETROLEUM EAST CHINA·Filed 2021·Granted Jan 16, 2024·0 cites·11 claims
- 1150US10636894B2Fin-type transistors with spacers on the gatesGLOBALFOUNDRIES INC·Filed 2018·Granted Apr 28, 2020·0 cites·19 claims
- 1249US11171036B2Preventing dielectric void over trench isolation regionGLOBALFOUNDRIES US INC·Filed 2019·Granted Nov 9, 2021·0 cites·15 claims
- 1349US10546775B1Field-effect transistors with improved dielectric gap fillGLOBALFOUNDRIES INC·Filed 2018·Granted Jan 28, 2020·0 cites·19 claims
- 1449US2024143413A1Managing edge compute servers with a data center element managerDELL PRODUCTS LP·Filed 2022·Application pending·0 cites
- 1545US10910276B1STI structure with liner along lower portion of longitudinal sides of active region, and related FET and methodGLOBALFOUNDRIES INC·Filed 2019·Granted Feb 2, 2021·0 cites·20 claims
- 1643US10742359B2Apparatus and method for improving messaging system reliabilityDELL PRODUCTS LP·Filed 2018·Granted Aug 11, 2020·0 cites·20 claims
- 1739US10164010B1Finfet diffusion break having protective liner in fin insulatorGLOBALFOUNDRIES INC·Filed 2017·Granted Dec 25, 2018·0 cites·20 claims
- 1837US10461155B2Epitaxial region for embedded source/drain region having uniform thicknessGLOBALFOUNDRIES INC·Filed 2017·Granted Oct 29, 2019·0 cites·10 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →