Inventor · disambiguated record
Yong-Sun Sohn
Also filed as: SOHN YONG SUN
17 granted patents·1 pending application·884 citations·filing 1999–2024
95Inventor score
Top patents by PatentIndex Score
18 records- 0197US6730568B2Method for fabricating semiconductor device with ultra-shallow super-steep-retrograde epi-channel by boron-fluoride compound dopingHYNIX SEMICONDUCTOR INC·Filed 2002·Granted May 4, 2004·172 cites·17 claims
- 0296US6881987B2pMOS device having ultra shallow super-steep-retrograde epi-channel with dual channel doping and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2003·Granted Apr 19, 2005·137 cites·18 claims
- 0395US6753230B2Method for fabricating semiconductor device with ultra-shallow super-steep-retrograde epi-channel by decaborane dopingHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Jun 22, 2004·139 cites·20 claims
- 0495US6667200B2Method for forming transistor of semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Dec 23, 2003·137 cites·21 claims
- 0592US6087210AMethod of manufacturing a CMOS TransistorHYUNDAI ELECTRONICS IND·Filed 1999·Granted Jul 11, 2000·135 cites·7 claims
- 0690US6475888B1Method for forming ultra-shallow junctions using laser annealingHYNIX SEMICONDUCTOR INC·Filed 2001·Granted Nov 5, 2002·52 cites·26 claims
- 0789US6583052B2Method of fabricating a semiconductor device having reduced contact resistanceHYNIX SEMICONDUCTOR INC·Filed 2001·Granted Jun 24, 2003·53 cites·18 claims
- 0872US7662705B2Partial implantation method for semiconductor manufacturingHYNIX SEMICONDUCTOR INC·Filed 2005·Granted Feb 16, 2010·3 cites·10 claims
- 0971US6767780B2Method for fabricating CMOS transistorHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Jul 27, 2004·13 cites·8 claims
- 1063US6953734B2Method for manufacturing shallow trench isolation in semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2003·Granted Oct 11, 2005·12 cites·13 claims
- 1160US7026256B2Method for forming flowable dielectric layer in semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2003·Granted Apr 11, 2006·9 cites·9 claims
- 1259US7825015B2Method for implanting ions in semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2004·Granted Nov 2, 2010·5 cites·9 claims
- 1358US2025062100A1Dual scan type ion implant systemNINEBELL CO LTD·Filed 2024·Application pending·0 cites
- 1457US7939418B2Partial implantation method for semiconductor manufacturingHYNIX SEMICONDUCTOR INC·Filed 2009·Granted May 10, 2011·0 cites·7 claims
- 1557US6667233B2Method for forming a silicide layer of semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Dec 23, 2003·8 cites·6 claims
- 1652US6879006B2MOS transistor and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2004·Granted Apr 12, 2005·3 cites·13 claims
- 1740US6184077B1Method for fabricating crown-type capacitor of semiconductor deviceHYUNDAI ELECTRONICS IND·Filed 1999·Granted Feb 6, 2001·6 cites·10 claims
- 1838US6949467B2Forming method of contact in semiconductor device and manufacturing method of PMOS device using the sameHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Sep 27, 2005·0 cites·12 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →