Inventor · disambiguated record
Yoon-Ho Son
Also filed as: SON YOON-HO
22 granted patents·10 pending applications·262 citations·filing 2004–2021
95Inventor score
Top patents by PatentIndex Score
32 records- 0196US7291556B2Method for forming small features in microelectronic devices using sacrificial layersSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Nov 6, 2007·118 cites·28 claims
- 0292US10418366B2Semiconductor devices including enlarged contact hole and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Sep 17, 2019·7 cites·14 claims
- 0391US8034705B2Method of forming a seam-free tungsten plugSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Oct 11, 2011·22 cites·6 claims
- 0490US9570316B2Method of manufacturing semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Feb 14, 2017·6 cites·14 claims
- 0590US7223693B2Methods for fabricating memory devices using sacrificial layers and memory devices fabricated by sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted May 29, 2007·21 cites·43 claims
- 0689US10916549B2Semiconductor devices including enlarged contact hole and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Feb 9, 2021·4 cites·20 claims
- 0788US10297495B2Method of manufactuing semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted May 21, 2019·4 cites·20 claims
- 0888US7803657B2Method of manufacturing a variable resistance structure and method of manufacturing a phase-change memory device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Sep 28, 2010·13 cites·16 claims
- 0988US7666789B2Method of manufacturing a variable resistance structure and method of manufacturing a phase-change memory device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Feb 23, 2010·14 cites·20 claims
- 1076US8723297B2Memory deviceSON YOON-HO·Filed 2011·Granted May 13, 2014·5 cites·15 claims
- 1176US8148710B2Phase-change memory device using a variable resistance structureCHOI SUK-HUN·Filed 2010·Granted Apr 3, 2012·3 cites·11 claims
- 1275US7265050B2Methods for fabricating memory devices using sacrificial layersSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Sep 4, 2007·21 cites·17 claims
- 1372US10290537B2Method of manufacturing semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted May 14, 2019·1 cites·10 claims
- 1469US8357613B2Methods of fabricating semiconductor devices and semiconductor devices including a contact plug processed by rapid thermal annealingSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Jan 22, 2013·6 cites·13 claims
- 1568US11329053B2Semiconductor devices including enlarged contact hole and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted May 10, 2022·0 cites·20 claims
- 1667US10957647B2Integrated circuit devices including a boron-containing insulating patternSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Mar 23, 2021·1 cites·19 claims
- 1766US7867902B2Methods of forming a contact structureSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Jan 11, 2011·3 cites·17 claims
- 1864US8962455B2Method of fabricating semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Feb 24, 2015·2 cites·15 claims
- 1964US7622379B2Methods of forming metal contact structures and methods of fabricating phase-change memory devices using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Nov 24, 2009·3 cites·15 claims
- 2063US7517703B2Method for forming ferroelectric memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Apr 14, 2009·2 cites·9 claims
- 2158US7078241B2Methods of forming ferroelectric capacitors using separate polishing processesSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jul 18, 2006·6 cites·8 claims
- 2251US7612359B2Microelectronic devices using sacrificial layers and structures fabricated by sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Nov 3, 2009·0 cites·12 claims
- 2349US2008128853A1Non-Volatile Memory Devices with Discrete Resistive Memory Material Regions and Methods of Fabricating the SameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 2444US2011081762A1Methods of fabricating non-volatile memory devices with discrete resistive memory material regionsSAMSUNG ELECTRONICS CO LTD·Filed 2010·Application pending·0 cites
- 2544US2009146304A1Carbon nanotube integrated circuit devices and methods of fabrication therefor using protected catalyst layersSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 2643US2007284743A1Fabricating Memory Devices Using Sacrificial Layers and Memory Devices Fabricated by SameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 2742US2006183250A1Methods of fabricating ferroelectric capacitors utilizing a partial chemical mechanical polishing processSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 2841US2009302302A1Metal oxide resistive memory and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Application pending·0 cites
- 2939US2006027848A1Ferroelectric memory device and method of forming the sameSON YOON-HO·Filed 2005·Application pending·0 cites
- 3038US2006263909A1Methods of fabricating thin ferroelectric layers and capacitors having ferroelectric dielectric layers thereinCHOI SUK-HUN·Filed 2006·Application pending·0 cites
- 3138US2007212797A1Method of forming a ferroelectric deviceCHOI SUK-HUN·Filed 2007·Application pending·0 cites
- 3238US2006263289A1Metal oxide resistive memory and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →