Inventor · disambiguated record
Yoon-Jong Song
Also filed as: SONG YOON-JONG
40 granted patents·7 pending applications·327 citations·filing 2001–2023
97Inventor score
Top patents by PatentIndex Score
47 records- 0195US7482616B2Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jan 27, 2009·39 cites·67 claims
- 0291US7453111B2Phase-change memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Nov 18, 2008·35 cites·13 claims
- 0389US9853087B2Magnetoresistive random access memory device and method of manufacturing the sameSUH KI-SEOK·Filed 2016·Granted Dec 26, 2017·8 cites·19 claims
- 0489US6737694B2Ferroelectric memory device and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted May 18, 2004·39 cites·4 claims
- 0588US10833250B2Magnetoresistive random access memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Nov 10, 2020·5 cites·20 claims
- 0688US10056543B2Magnetoresistive random access memory device having magnetic tunnel junction and method of manufacturing the sameBAK JUNG HOON·Filed 2016·Granted Aug 21, 2018·10 cites·19 claims
- 0788US7309885B2PRAMs having a plurality of active regions located vertically in sequence and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Dec 18, 2007·15 cites·14 claims
- 0887US8026543B2Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Sep 27, 2011·12 cites·20 claims
- 0985US9431610B2Methods of manufacturing a phase change memory device including a heat sinkSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Aug 30, 2016·4 cites·7 claims
- 1084US7906773B2Phase change memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Mar 15, 2011·13 cites·17 claims
- 1184US7696508B2Phase change memory devices having dual lower electrodesSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Apr 13, 2010·13 cites·17 claims
- 1280US6713310B2Ferroelectric memory device using via etch-stop layer and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Mar 30, 2004·18 cites·17 claims
- 1379US10319784B2Semiconductor device including variable resistance memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jun 11, 2019·2 cites·20 claims
- 1479US7348616B2Ferroelectric integrated circuit devices having an oxygen penetration pathSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Mar 25, 2008·7 cites·16 claims
- 1577US7339185B2Phase change memory device and method for forming the sameSAMSUNG ELECTRONICS COL LTD·Filed 2005·Granted Mar 4, 2008·14 cites·21 claims
- 1676US8203135B2Semiconductor device including uniform contact plugs and a method of manufacturing the sameSIM KYU-RIE·Filed 2010·Granted Jun 19, 2012·7 cites·10 claims
- 1776US6909134B2Ferroelectric memory device using via etch-stop layer and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jun 21, 2005·13 cites·20 claims
- 1874US6979881B2Ferroelectric integrated circuit devices having an oxygen penetration pathSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Dec 27, 2005·16 cites·19 claims
- 1972US10651236B2Semiconductor device including variable resistance memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted May 12, 2020·2 cites·20 claims
- 2070US7939366B2Phase change memory devices and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted May 10, 2011·7 cites·10 claims
- 2169US11462679B2Magnetoresistive random access memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Oct 4, 2022·0 cites·13 claims
- 2268US10163976B2Magnetoresistive random access memory device and method of manufacturing the sameSUH KI SEOK·Filed 2017·Granted Dec 25, 2018·1 cites·15 claims
- 2368US7977662B2Phase-changeable memory devices having reduced susceptibility to thermal interferenceSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jul 12, 2011·10 cites·7 claims
- 2468US7498179B2Semiconductor device having ferroelectric material capacitor and method of making the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Mar 3, 2009·2 cites·7 claims
- 2562US7479405B2PRAMS having a plurality of active regions located vertically in sequence and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jan 20, 2009·2 cites·17 claims
- 2661US6956279B2Semiconductor device having multi-layer oxygen barrier patternSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Oct 18, 2005·6 cites·12 claims
- 2758US7045839B2Ferroelectric memory devices with improved ferroelectric properties and associated methods for fabricating such memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted May 16, 2006·7 cites·25 claims
- 2857US6911362B2Methods for forming electronic devices including capacitor structuresSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jun 28, 2005·6 cites·33 claims
- 2956US6825082B2Ferroelectric memory device and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Nov 30, 2004·4 cites·20 claims
- 3056US2013320290A1Phase change memory devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Application pending·0 cites
- 3155US7932102B2Phase change memory and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Apr 26, 2011·0 cites·16 claims
- 3254US7064366B2Ferroelectric memory devices having an expanded plate electrodeSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jun 20, 2006·9 cites·11 claims
- 3353US2023371276A1Magnetic memory device and electronic device comprising the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 3451US8164079B2Phase change memorySONG YOON-JONG·Filed 2011·Granted Apr 24, 2012·0 cites·10 claims
- 3551US2012175580A1Variable resistance memorySONG YOON-JONG·Filed 2012·Application pending·0 cites
- 3650US12022744B2Core magnetization reversal method of skyrmion and data storage device using the methodSEOUL NAT UNIV R&DB FOUNDATION·Filed 2021·Granted Jun 25, 2024·0 cites·14 claims
- 3750US8129214B2Phase change memory devices having dual lower electrodes and methods of fabricating the sameSONG YOON-JONG·Filed 2010·Granted Mar 6, 2012·1 cites·11 claims
- 3850US8043924B2Methods of forming phase-change memory units, and methods of manufacturing phase-change memory devices using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Oct 25, 2011·0 cites·6 claims
- 3949US11301319B2Memory device and memory system having multiple error correction functions, and operating method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Apr 12, 2022·0 cites·11 claims
- 4046US2007272950A1Semiconductor memory devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 4145US7488628B2Methods for fabricating ferroelectric memory devices with improved ferroelectric propertiesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Feb 10, 2009·0 cites·17 claims
- 4242US2005263801A1Phase-change memory device having a barrier layer and manufacturing methodPARK JAE-HYUN·Filed 2005·Application pending·0 cites
- 4341US10109676B2MTJ structures including magnetism induction pattern and magnetoresistive random access memory devices including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Oct 23, 2018·0 cites·13 claims
- 4441US7888667B2Phase change memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Feb 15, 2011·0 cites·5 claims
- 4541US2008111171A1Node structures under capacitor in ferroelectric random access memory device and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 4639US9484526B2Magnetic memory device and method for forming the sameJEONG DAE-EUN·Filed 2015·Granted Nov 1, 2016·0 cites·13 claims
- 4735US2010252795A1Phase change memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →