Inventor · disambiguated record
Yoshitaka Sugawara
Also filed as: KAMEI TATSUYA · SUGAWARA YOSHITAKA
61 granted patents·18 pending applications·859 citations·filing 1976–2024
99Inventor score
Top patents by PatentIndex Score
79 records- 0195US5572048AVoltage-driven type semiconductor deviceHITACHI LTD·Filed 1993·Granted Nov 5, 1996·142 cites·2 claims
- 0292US6342709B1Insulated gate semiconductor deviceKANSAI ELECTRIC POWER CO·Filed 1997·Granted Jan 29, 2002·125 cites·20 claims
- 0390US7554220B2Stable power supplying apparatusKANSAI ELECTRIC POWER CO·Filed 2004·Granted Jun 30, 2009·38 cites·14 claims
- 0487US11976214B2Antiglare filmDAICEL CORP·Filed 2018·Granted May 7, 2024·1 cites·3 claims
- 0586US8896084B2Semiconductor deviceSUGAWARA YOSHITAKA·Filed 2011·Granted Nov 25, 2014·10 cites·18 claims
- 0686US4100562ALight coupled semiconductor device and method of manufacturing the sameHITACHI LTD·Filed 1976·Granted Jul 11, 1978·51 cites·17 claims
- 0786US2024402393A1Anti-glare filmDAICEL CORP·Filed 2024·Application pending·0 cites
- 0885US12153193B2Anti-glare filmDAICEL CORP·Filed 2023·Granted Nov 26, 2024·0 cites·4 claims
- 0985US6600192B1Vertical field-effect semiconductor device with buried gate regionKANSAI ELECTRIC POWER CO·Filed 1999·Granted Jul 29, 2003·70 cites·13 claims
- 1085US2024240030A1Antiglare filmDAICEL CORP·Filed 2024·Application pending·0 cites
- 1184US8748937B2Insulated gate bipolar transistor with high breakdown voltageFUJI ELECTRIC CO LTD·Filed 2012·Granted Jun 10, 2014·7 cites·11 claims
- 1284US4122479AOptoelectronic device having control circuit for light emitting element and circuit for light receiving element integrated in a semiconductor bodyHITACHI LTD·Filed 1976·Granted Oct 24, 1978·47 cites·18 claims
- 1382US12228753B2Anti-glare filmDAICEL CORP·Filed 2023·Granted Feb 18, 2025·0 cites·4 claims
- 1482US8003736B2Silicon-containing compound, curable composition and cured productADEKA CORP·Filed 2008·Granted Aug 23, 2011·5 cites·17 claims
- 1581US4794441ASemiconductor switch circuitHITACHI LTD·Filed 1985·Granted Dec 27, 1988·36 cites·12 claims
- 1680US12037513B2Antiglare filmDAICEL CORP·Filed 2022·Granted Jul 16, 2024·0 cites·2 claims
- 1780US8154026B2Silicon carbide bipolar semiconductor deviceISHII RYOSUKE·Filed 2006·Granted Apr 10, 2012·8 cites·20 claims
- 1879US11880051B2Anti-glare filmDAICEL CORP·Filed 2023·Granted Jan 23, 2024·0 cites·4 claims
- 1979US11733431B2Anti-glare filmDAICEL CORP·Filed 2022·Granted Aug 22, 2023·0 cites·5 claims
- 2079US5631494APower semiconductor device with low on-state voltageHITACHI LTD·Filed 1994·Granted May 20, 1997·62 cites·29 claims
- 2177US7482237B2Semiconductor device and method of producing the same, and power conversion apparatus incorporating this semiconductor deviceKANSAI ELECTRIC POWER CO·Filed 2006·Granted Jan 27, 2009·4 cites·4 claims
- 2277US2024142670A1Anti-glare film, method for producing same, and use of sameDAICEL CORP·Filed 2024·Application pending·0 cites
- 2376US8786024B2Semiconductor device comprising bipolar and unipolar transistors including a concave and convex portionSUGAWARA YOSHITAKA·Filed 2011·Granted Jul 22, 2014·5 cites·15 claims
- 2476US7470960B1High-voltage power semiconductor device with body regions of alternating conductivity and decreasing thicknessKANSAI ELECTRIC POWER COMPANY·Filed 2000·Granted Dec 30, 2008·24 cites·4 claims
- 2576US7462886B2Semiconductor device and method of producing the same, and power conversion apparatus incorporating this semiconductor deviceKANSAI ELECTRIC POWER CO·Filed 2006·Granted Dec 9, 2008·4 cites·2 claims
- 2676US7462888B2Semiconductor device and method of producing the same, and power conversion apparatus incorporating this semiconductor deviceKANSAI ELECTRIC POWER CO·Filed 2007·Granted Dec 9, 2008·4 cites·4 claims
- 2776US5552625ASemiconductor device having a semi-insulating layerHITACHI LTD·Filed 1994·Granted Sep 3, 1996·41 cites·17 claims
- 2874US7960737B2Silicon carbide semiconductor device and manufacturing method thereforKANSAI ELECTRIC POWER CO·Filed 2010·Granted Jun 14, 2011·2 cites·1 claims
- 2972US7939614B2Silicon-containing curing composition and heat cured product thereofADEKA CORP·Filed 2005·Granted May 10, 2011·3 cites·6 claims
- 3072US7772594B2High-heat-resistive semiconductor deviceKANSAI ELECTRIC POWER CO·Filed 2005·Granted Aug 10, 2010·6 cites·10 claims
- 3170US8178949B2Bipolar semiconductor device, method for producing the same, and method for controlling Zener voltageISHII RYOSUKE·Filed 2008·Granted May 15, 2012·5 cites·10 claims
- 3268US7960257B2Silicon carbide semiconductor device and manufacturing method thereforKANSAI ELECTRIC POWER CO·Filed 2010·Granted Jun 14, 2011·1 cites·3 claims
- 3368US7960738B2Silicon carbide semiconductor device and manufacturing method thereforKANSAI ELECTRIC POWER CO·Filed 2010·Granted Jun 14, 2011·1 cites·1 claims
- 3466US11772365B2Anti-glare film, method for producing same, and use of sameDAICEL CORP·Filed 2018·Granted Oct 3, 2023·0 cites·7 claims
- 3566US7768017B2Silicon carbide semiconductor device and manufacturing method thereforKANSAI ELECTRIC CO INC·Filed 2004·Granted Aug 3, 2010·9 cites·5 claims
- 3665US11313995B2Anti-glare filmDAICEL CORP·Filed 2018·Granted Apr 26, 2022·0 cites·4 claims
- 3764US2009225573A1Stable power supplying apparatusKANSAI ELECTRIC POWER CO·Filed 2009·Application pending·0 cites
- 3863US11906702B2Anti-glare film, method for producing same, and use of sameDAICEL CORP·Filed 2018·Granted Feb 20, 2024·0 cites·20 claims
- 3961US11650357B2Anti-glare filmDAICEL CORP·Filed 2018·Granted May 16, 2023·0 cites·4 claims
- 4061US8367510B2Process for producing silicon carbide semiconductor deviceCENTRAL RES INST ELECT·Filed 2006·Granted Feb 5, 2013·1 cites·10 claims
- 4158US7488973B2High-heat-resistant semiconductor deviceKANSAI ELECTRIC POWER CO·Filed 2004·Granted Feb 10, 2009·6 cites·2 claims
- 4256US8455269B2Method for recovering an on-state forward voltage and, shrinking stacking faults in bipolar semiconductor devices, and the bipolar semiconductor devicesMIYANAGI TOSHIYUKI·Filed 2006·Granted Jun 4, 2013·2 cites·10 claims
- 4356US7544970B2Semiconductor device and method of producing the same, and power conversion apparatus incorporating this semiconductor deviceKANSAI ELECTRIC POWER CO·Filed 2004·Granted Jun 9, 2009·4 cites·9 claims
- 4455US7626232B2Voltage-controlled semiconductor deviceKANSAI ELECTRIC POWER CO·Filed 2005·Granted Dec 1, 2009·1 cites·13 claims
- 4555US4419685ASemiconductor deviceHITACHI LTD·Filed 1981·Granted Dec 6, 1983·13 cites·3 claims
- 4654US11598903B2Anti-glare film, method for producing same, and use of sameDAICEL CORP·Filed 2018·Granted Mar 7, 2023·0 cites·8 claims
- 4753US7554114B2High-heat-resistant semiconductor deviceKANSAI ELECTRIC POWER CO·Filed 2007·Granted Jun 30, 2009·0 cites·4 claims
- 4853US4136351APhoto-coupled semiconductor deviceHITACHI LTD·Filed 1977·Granted Jan 23, 1979·14 cites·9 claims
- 4953US2009072356A1High-Heat-Resistant Semiconductor DeviceKANSAI ELECTRIC POWER CO·Filed 2008·Application pending·0 cites
- 5053US2008204115A1Semiconductor device and method of producing the same, and power conversion apparatus incorporating this semiconductor deviceKANSAI ELECTRIC POWER CO·Filed 2008·Application pending·0 cites
Showing the top 50 of 79 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →