High-Heat-Resistant Semiconductor Device

Abstract

In a wide gap semiconductor device of SiC or the like used at a temperature of 150 degrees centigrade or higher, the insulation characteristic of a wide gap semiconductor element is improved and a high-voltage resistance is achieved. For these purposes, a synthetic high-molecular compound, with which the outer surface of the wide gap semiconductor element is coated, is formed in a three-dimensional steric structure which is formed by linking together organosilicon polymers C with covalent bonds resulting from addition reaction. The organosilicon polymers C have been formed by linking at least one organosilicon polymers A having a crosslinked structure using siloxane (Si—O—Si combination) with at least one organosilicon polymers B having a linear linked structure using siloxane through siloxane bonds.

1 . A semiconductor device having a synthetic high-molecular compound, wherein
 the synthetic high-molecular compound covers a semiconductor element and at least part of electrical connecting means used for electrically connecting the semiconductor device to external devices;   the synthetic high-molecular compound contains a compound having a three-dimensional steric structure and having a structure in which plural third organosilicon polymers are linked to each other with covalent bonds resulting from an addition reaction;   each of the third organosilicon polymers has a molecular weight of 2×104 to 8×105 and has a structure in which plural first organosilicon polymers are linked through siloxane bonds with plural second organosilicon polymers;   each of the first organosilicon polymers has a crosslinked structure using siloxane (Si—O—Si combination) and each of the second organosilicon polymers has a linear structure using siloxane;   the first organosilicon polymer is a silsesquioxane polymer, and the second organosilicon polymer is a siloxane polymer; and   the molecular weight of the first organosilicon polymer is lower than the molecular weight of the second organosilicon polymer.   
   
   
       2 . The semiconductor device as claimed in  claim 1 , wherein each of the third organosilicon polymers has a structure in which plural first organosilicon polymers are alternately and linearly linked through siloxane bonds with plural second organosilicon polymers. 
   
   
       3 . The semiconductor device as claimed in  claim 1 , wherein
 the first organosilicon polymer is selected from the group consisting of polyphenylsilsesquioxane, polymethylsilsesquioxane, polyethylsilsesquioxane, polypropylsilsesquioxane, and combinations thereof; and   the second organosilicon polymer is selected from the group consisting of polydimethylsiloxane, polydiethylsiloxane, polydiphenylsiloxane, polymethylphenylsiloxane, and combinations thereof.