Inventor · disambiguated record
Yoichi Tamaki
Also filed as: TAMAKI Y · TAMAKI YOICHI
32 granted patents·586 citations·filing 1977–2004
98Inventor score
Top patents by PatentIndex Score
32 records- 0188US4949162ASemiconductor integrated circuit with dummy pedestalsHITACHI LTD·Filed 1988·Granted Aug 14, 1990·91 cites·21 claims
- 0281US4635090ATapered groove IC isolationHITACHI LTD·Filed 1985·Granted Jan 6, 1987·49 cites·23 claims
- 0380US5793097ASemiconductor device having conducting structureHITACHI LTD·Filed 1995·Granted Aug 11, 1998·30 cites·27 claims
- 0480US4729965AMethod of forming extrinsic base by diffusion from polysilicon/silicide source and emitter by lithographyHITACHI LTD·Filed 1985·Granted Mar 8, 1988·39 cites·24 claims
- 0575US4746963AIsolation regions formed by locos followed with groove etch and refillHITACHI LTD·Filed 1986·Granted May 24, 1988·33 cites·42 claims
- 0672US7576406B2Semiconductor deviceHITACHI LTD·Filed 2004·Granted Aug 18, 2009·19 cites·18 claims
- 0772US4396460AMethod of forming groove isolation in a semiconductor deviceHITACHI LTD·Filed 1982·Granted Aug 2, 1983·34 cites·9 claims
- 0869US5846869AMethod of manufacturing semiconductor integrated circuit deviceHITACHI LTD·Filed 1996·Granted Dec 8, 1998·36 cites·10 claims
- 0966US5773340AMethod of manufacturing a BIMISHITACHI LTD·Filed 1995·Granted Jun 30, 1998·26 cites·14 claims
- 1064US7089525B2Semiconductor device and method for fabricating the sameHITACHI ULSI SYS CO LTD·Filed 2003·Granted Aug 8, 2006·11 cites·7 claims
- 1164US5011788AProcess of manufacturing semiconductor integrated circuit device and product formed therebyHITACHI LTD·Filed 1988·Granted Apr 30, 1991·22 cites·21 claims
- 1263US6835632B2Semiconductor device and process of producing the sameHITACHI LTD·Filed 2003·Granted Dec 28, 2004·6 cites·4 claims
- 1361US6573578B2Photo semiconductor integrated circuit device and optical recording reproducing apparatusHITACHI LTD·Filed 2001·Granted Jun 3, 2003·8 cites·1 claims
- 1460US7238582B2Semiconductor device and process of producing the sameHITACHI DEVICE ENG·Filed 2004·Granted Jul 3, 2007·5 cites·6 claims
- 1560US6610569B1Semiconductor device and process of producing the sameHITACHI LTD·Filed 2000·Granted Aug 26, 2003·5 cites·33 claims
- 1659US6876067B2Semiconductor deviceHITACHI LTD·Filed 2003·Granted Apr 5, 2005·9 cites·13 claims
- 1758US4819054ASemiconductor IC with dual groove isolationHITACHI LTD·Filed 1987·Granted Apr 4, 1989·18 cites·30 claims
- 1857US6662344B2Semiconductor device and method for fabricating the sameHITACHI LTD·Filed 2002·Granted Dec 9, 2003·7 cites·14 claims
- 1955US4984048ASemiconductor device with buried side contactHITACHI LTD·Filed 1988·Granted Jan 8, 1991·20 cites·30 claims
- 2051US6133094ASemiconductor device and process of producing the sameHITACHI LTD·Filed 1998·Granted Oct 17, 2000·7 cites·10 claims
- 2151US5141888AProcess of manufacturing semiconductor integrated circuit device having trench and field isolation regionsHITACHI LTD·Filed 1991·Granted Aug 25, 1992·15 cites·37 claims
- 2250US5128743ASemiconductor device and method of manufacturing the sameHITACHI LTD·Filed 1986·Granted Jul 7, 1992·13 cites·13 claims
- 2348US5643805AProcess for producing a bipolar deviceHITACHI LTD·Filed 1995·Granted Jul 1, 1997·13 cites·12 claims
- 2446US4126880AGermanium-containing silicon nitride filmHITACHI LTD·Filed 1977·Granted Nov 21, 1978·10 cites·15 claims
- 2544US5324983ASemiconductor deviceHITACHI LTD·Filed 1992·Granted Jun 28, 1994·10 cites·31 claims
- 2644US4905078ASemiconductor deviceHITACHI LTD·Filed 1987·Granted Feb 27, 1990·10 cites·29 claims
- 2743US4853343AMethod for fabricating a semiconductor integrated circuit device having thick oxide films and groove etch and refillHITACHI LTD·Filed 1988·Granted Aug 1, 1989·8 cites·20 claims
- 2841US5200348AMethod of manufacturing semiconductor device with constant width deep groove isolationHITACHI LTD·Filed 1991·Granted Apr 6, 1993·8 cites·16 claims
- 2938US5619069ABipolar device and production thereofHITACHI LTD·Filed 1995·Granted Apr 8, 1997·6 cites·14 claims
- 3038US5084402AMethod of fabricating a semiconductor substrate, and semiconductor device, having thick oxide films and groove isolationHITACHI IND·Filed 1989·Granted Jan 28, 1992·8 cites·29 claims
- 3136US4926235ASemiconductor deviceTAMAKI YOICHI·Filed 1987·Granted May 15, 1990·8 cites·30 claims
- 3235US6524924B1Semiconductor device and process of producing the sameHITACHI LTD·Filed 1998·Granted Feb 25, 2003·2 cites·9 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →