Inventor · disambiguated record
Yoshinori Taneda
Also filed as: TANEDA YOSHINORI
16 granted patents·2 pending applications·45 citations·filing 2012–2016
90Inventor score
Top patents by PatentIndex Score
18 records- 0195US8759220B1Patterning processSHINETSU CHEMICAL CO·Filed 2013·Granted Jun 24, 2014·13 cites·46 claims
- 0293US10444628B2Compound for forming organic film, composition for forming organic film, method for forming organic film, and patterning processSHINETSU CHEMICAL CO·Filed 2016·Granted Oct 15, 2019·8 cites·17 claims
- 0389US9522979B2Fluorine-containing silicon compound, method for producing same, and method for producing fluorine-containing silicon resinSHINETSU CHEMICAL CO·Filed 2015·Granted Dec 20, 2016·2 cites·8 claims
- 0488US8932953B2Composition for forming a silicon-containing resist underlayer film and patterning process using the sameOGIHARA TSUTOMU·Filed 2012·Granted Jan 13, 2015·6 cites·30 claims
- 0583US9312127B2Method for producing semiconductor apparatus substrateSHINETSU CHEMICAL CO·Filed 2015·Granted Apr 12, 2016·4 cites·20 claims
- 0681US10429739B2Compound for forming organic film, composition for forming organic film, method for forming organic film, and patterning processSHINETSU CHEMICAL CO·Filed 2016·Granted Oct 1, 2019·3 cites·18 claims
- 0778US8945820B2Silicon-containing resist underlayer film-forming composition and patterning processSHINETSU CHEMICAL CO·Filed 2012·Granted Feb 3, 2015·4 cites·11 claims
- 0870US9075309B2Silicon-containing surface modifier, resist underlayer film composition containing this, and patterning processSHINETSU CHEMICAL CO·Filed 2013·Granted Jul 7, 2015·2 cites·22 claims
- 0965US9627204B2Composition for forming a coating type BPSG film, substrate formed a film by said composition, and patterning process using said compositionSHINETSU CHEMICAL CO·Filed 2014·Granted Apr 18, 2017·1 cites·21 claims
- 1064US9902875B2Composition for forming a coating type BPSG film, substrate, and patterning processSHINETSU CHEMICAL CO·Filed 2015·Granted Feb 27, 2018·1 cites·27 claims
- 1163US9580623B2Patterning process using a boron phosphorus silicon glass filmSHINETSU CHEMICAL CO·Filed 2015·Granted Feb 28, 2017·1 cites·12 claims
- 1248US9176382B2Composition for forming titanium-containing resist underlayer film and patterning processSHINETSU CHEMICAL CO·Filed 2014·Granted Nov 3, 2015·0 cites·18 claims
- 1345US9377690B2Compositon for forming metal oxide-containing film and patterning processSHINETSU CHEMICAL CO·Filed 2013·Granted Jun 28, 2016·0 cites·20 claims
- 1445US2014193975A1Composition for forming titanium-containing resist underlayer film and patterning processSHINETSU CHEMICAL CO·Filed 2013·Application pending·0 cites
- 1544US9188866B2Composition for forming titanium-containing resist underlayer film and patterning processSHINETSU CHEMICAL CO·Filed 2014·Granted Nov 17, 2015·0 cites·21 claims
- 1644US9069247B2Silicon-containing surface modifier, resist lower layer film-forming composition containing the same, and patterning processSHINETSU CHEMICAL CO·Filed 2013·Granted Jun 30, 2015·0 cites·12 claims
- 1741US2013280912A1Silicon compound, silicon-containing compound, composition for forming resist underlayer film containing the same and patterning processSHINETSU CHEMICAL CO·Filed 2013·Application pending·0 cites
- 1834US9880470B2Composition for forming a coating type silicon-containing film, substrate, and patterning processSHINETSU CHEMICAL CO·Filed 2015·Granted Jan 30, 2018·0 cites·18 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →