Inventor · disambiguated record
Yoshio Terasawa
Also filed as: TERASAWA YOSHIO · WAJIMA KOICHI
33 granted patents·468 citations·filing 1974–1999
97Inventor score
Top patents by PatentIndex Score
33 records- 0191US6025233AMethod of manufacturing a semiconductor deviceNGK INSULATORS LTD·Filed 1999·Granted Feb 15, 2000·89 cites·6 claims
- 0290US4223328AField controlled thyristor with dual resistivity field layerHITACHI LTD·Filed 1978·Granted Sep 16, 1980·42 cites·11 claims
- 0390US3939415AMethod of and device for measuring life time of carriers of semiconductorHITACHI LTD·Filed 1974·Granted Feb 17, 1976·40 cites·5 claims
- 0483US6002143AHybrid vertical type power semiconductor deviceNGK INSULATORS LTD·Filed 1996·Granted Dec 14, 1999·49 cites·19 claims
- 0579US4514747AField controlled thyristor with double-diffused source regionHITACHI LTD·Filed 1982·Granted Apr 30, 1985·32 cites·12 claims
- 0677US5930651AMethod of forming a semiconductor device having a plurality of cavity defined gating regionsNGK INSULATORS LTD·Filed 1997·Granted Jul 27, 1999·34 cites·24 claims
- 0772US6075269ASemiconductor device and process for manufacturing the sameNGK INSULATORS LTD·Filed 1997·Granted Jun 13, 2000·41 cites·12 claims
- 0853US5894140ASemiconductor device having recessed gate structures and method of manufacturing the sameNGK INSULATORS LTD·Filed 1995·Granted Apr 13, 1999·12 cites·14 claims
- 0953US5739044AMethod of manufacturing semiconductor deviceNGK INSULATORS LTD·Filed 1996·Granted Apr 14, 1998·12 cites·14 claims
- 1052US3978513ASemiconductor controlled rectifying deviceHITACHI LTD·Filed 1974·Granted Aug 31, 1976·8 cites·11 claims
- 1148US4354121AField controlled thyristor control circuit with additional FCT in reverse bias circuitHITACHI LTD·Filed 1981·Granted Oct 12, 1982·10 cites·15 claims
- 1247US5591991ASemiconductor device and method of manufacturing the sameNGK INSULATORS LTD·Filed 1994·Granted Jan 7, 1997·9 cites·13 claims
- 1343US5648665ASemiconductor device having a plurality of cavity defined gating regions and a fabrication method thereforNGK INSULATORS LTD·Filed 1995·Granted Jul 15, 1997·7 cites·10 claims
- 1443US4214254AAmplified gate semiconductor controlled rectifier with reduced lifetime in auxiliary thyristor portionHITACHI LTD·Filed 1978·Granted Jul 22, 1980·5 cites·10 claims
- 1542US5757035ASemiconductor deviceNGK INSULATORS LTD·Filed 1996·Granted May 26, 1998·6 cites·9 claims
- 1642US5702962AFabrication process for a static induction transistorNGK INSULATORS LTD·Filed 1996·Granted Dec 30, 1997·8 cites·15 claims
- 1742US5602405ASemiconductor device with base formed by the junction of two semiconductors of the same conductive typeNGK INSULATORS LTD·Filed 1995·Granted Feb 11, 1997·8 cites·7 claims
- 1842US4329772AMethod for manufacturing a semiconductor device utilizing selective epitaxial growth and post heat treatingHITACHI LTD·Filed 1980·Granted May 18, 1982·11 cites·6 claims
- 1942US4114178ASemiconductor controlled rectifier having an auxiliary region with localized low resistance paths to the control gateHITACHI LTD·Filed 1976·Granted Sep 12, 1978·5 cites·13 claims
- 2042US3943548ASemiconductor controlled rectifierHITACHI LTD·Filed 1974·Granted Mar 9, 1976·5 cites·8 claims
- 2141US6180965B1Semiconductor device having a static induction in a recessed portionNGK INSULATORS LTD·Filed 1997·Granted Jan 30, 2001·7 cites·17 claims
- 2239US4063270ASemiconductor controlled rectifier device having amplifying gate structureHITACHI LTD·Filed 1976·Granted Dec 13, 1977·4 cites·11 claims
- 2337US4016591ASemiconductor controlled rectifierHITACHI LTD·Filed 1974·Granted Apr 5, 1977·3 cites·13 claims
- 2436US3990090ASemiconductor controlled rectifierHITACHI LTD·Filed 1974·Granted Nov 2, 1976·3 cites·6 claims
- 2535US6159776AMethod for manufacturing semiconductor deviceNGK INSULATORS LTD·Filed 1998·Granted Dec 12, 2000·3 cites·6 claims
- 2635US5946572AMethod of manufacturing a semiconductor device having recessed gate structuresNGK INSULATORS LTD·Filed 1998·Granted Aug 31, 1999·3 cites·7 claims
- 2735US4713679AReverse blocking type semiconductor deviceHITACHI LTD·Filed 1985·Granted Dec 15, 1987·5 cites·10 claims
- 2832US5841155ASemiconductor device containing two joined substratesNGK INSULATORS LTD·Filed 1996·Granted Nov 24, 1998·2 cites·6 claims
- 2931US5950075ASemiconductor device having recessed gate regions and method of manufacturing the sameNGK INSULATORS LTD·Filed 1997·Granted Sep 7, 1999·1 cites·8 claims
- 3031US5847417ASemiconductor device and method of manufacturing sameNGK INSULATORS LTD·Filed 1995·Granted Dec 8, 1998·1 cites·6 claims
- 3130US5956577AMethod of manufacturing serrated gate-type or joined structureNGK INSULATORS LTD·Filed 1998·Granted Sep 21, 1999·0 cites·20 claims
- 3230US4404580ALight activated semiconductor deviceHITACHI LTD·Filed 1980·Granted Sep 13, 1983·1 cites·11 claims
- 3329US4210924ASemiconductor controlled rectifier with configured cathode to eliminate hot-spotsHITACHI LTD·Filed 1978·Granted Jul 1, 1980·2 cites·11 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →