Inventor · disambiguated record
Yusuke Biyajima
Also filed as: BIYAJIMA YUSUKE
27 granted patents·5 pending applications·36 citations·filing 2011–2024
93Inventor score
Top patents by PatentIndex Score
32 records- 0195US11385544B2Composition for forming silicon-containing resist underlayer film and patterning processSHINETSU CHEMICAL CO·Filed 2020·Granted Jul 12, 2022·4 cites·20 claims
- 0293US9207535B2Method for producing resist compositionSHINETSU CHEMICAL CO·Filed 2014·Granted Dec 8, 2015·7 cites·20 claims
- 0390US8663898B2Resist underlayer film composition and patterning process using the sameOGIHARA TSUTOMU·Filed 2011·Granted Mar 4, 2014·7 cites·28 claims
- 0487US12147160B2Resist underlayer film material, patterning process, and method for forming resist underlayer filmSHINETSU CHEMICAL CO·Filed 2021·Granted Nov 19, 2024·1 cites·11 claims
- 0587US8853031B2Resist underlayer film composition and patterning process using the sameOGIHARA TSUTOMU·Filed 2011·Granted Oct 7, 2014·5 cites·28 claims
- 0685US12332565B2Thermosetting iodine- and silicon-containing material, composition containing the material for forming resist underlayer film for EUV lithography, and patterning processSHINETSU CHEMICAL CO·Filed 2023·Granted Jun 17, 2025·0 cites·12 claims
- 0783US9312127B2Method for producing semiconductor apparatus substrateSHINETSU CHEMICAL CO·Filed 2015·Granted Apr 12, 2016·4 cites·20 claims
- 0880US11480879B2Composition for forming silicon-containing resist underlayer film and patterning processSHINETSU CHEMICAL CO·Filed 2020·Granted Oct 25, 2022·1 cites·12 claims
- 0980US8877422B2Resist underlayer film composition and patterning process using the sameOGIHARA TSUTOMU·Filed 2011·Granted Nov 4, 2014·3 cites·20 claims
- 1074US8592956B2Resist underlayer film composition and patterning process using the sameOGIHARA TSUTOMU·Filed 2011·Granted Nov 26, 2013·2 cites·26 claims
- 1172US11018015B2Composition for forming organic film, substrate for manufacturing semiconductor device, method for forming organic film, and patterning processSHINETSU CHEMICAL CO·Filed 2018·Granted May 25, 2021·1 cites·22 claims
- 1270US12174541B2Composition for forming silicon-containing resist underlayer film and patterning processSHINETSU CHEMICAL CO·Filed 2023·Granted Dec 24, 2024·0 cites·4 claims
- 1365US9201301B2Method for producing resist compositionSHINETSU CHEMICAL CO·Filed 2014·Granted Dec 1, 2015·1 cites·4 claims
- 1462US2023400770A1Resist Underlayer Film Material, Patterning Process, And Method For Forming Resist Underlayer FilmSHINETSU CHEMICAL CO·Filed 2023·Application pending·0 cites
- 1559US12085857B2Composition for forming silicon-containing resist underlayer film and patterning processSHINETSU CHEMICAL CO·Filed 2020·Granted Sep 10, 2024·0 cites·14 claims
- 1659US2024337944A1Resist Underlayer Film Material, Pattern Forming Method, And Method Of Forming Resist Underlayer FilmSHINETSU CHEMICAL CO·Filed 2024·Application pending·0 cites
- 1758US12351742B2Material for forming adhesive film, patterning process, and method for forming adhesive filmSHINETSU CHEMICAL CO·Filed 2022·Granted Jul 8, 2025·0 cites·20 claims
- 1857US12498639B2Material for forming adhesive film, method for forming adhesive film using the same, and patterning process using material for forming adhesive filmSHINETSU CHEMICAL CO·Filed 2022·Granted Dec 16, 2025·0 cites·18 claims
- 1957US11914295B2Thermosetting iodine- and silicon-containing material, composition containing the material for forming resist underlayer film for EUV lithography, and patterning processSHINETSU CHEMICAL CO·Filed 2019·Granted Feb 27, 2024·0 cites·23 claims
- 2057US2024310731A1Material For Forming Adhesive Film, Patterning Process, And Method For Forming Adhesive FilmSHINETSU CHEMICAL CO·Filed 2024·Application pending·0 cites
- 2154US12001138B2Composition for forming silicon-containing resist underlayer film and patterning processSHINETSU CHEMICAL CO·Filed 2020·Granted Jun 4, 2024·0 cites·16 claims
- 2253US11592287B2Method for measuring distance of diffusion of curing catalystSHINETSU CHEMICAL CO·Filed 2020·Granted Feb 28, 2023·0 cites·4 claims
- 2352US12013640B2Resist underlayer film material, patterning process, and method for forming resist underlayer filmSHINETSU CHEMICAL CO·Filed 2021·Granted Jun 18, 2024·0 cites·19 claims
- 2452US10610906B2Method for manufacturing a resist compositionSHINETSU CHEMICAL CO·Filed 2014·Granted Apr 7, 2020·0 cites·3 claims
- 2552US2014205951A1Thermal crosslinking accelerator, polysiloxane-containing resist underlayer film forming composition containing same, and patterning process using sameSHINETSU CHEMICAL CO·Filed 2013·Application pending·0 cites
- 2651US9052603B2Pattern forming processSHINETSU CHEMICAL CO·Filed 2014·Granted Jun 9, 2015·0 cites·19 claims
- 2751US2018081272A1Thermal crosslinking accelerator, polysiloxane-containing resist underlayer film forming composition containing same, and patterning process using sameSHINETSU CHEMICAL CO·Filed 2017·Application pending·0 cites
- 2850US11822247B2Material for forming organic film, method for forming organic film, patterning process, and compoundSHINETSU CHEMICAL CO·Filed 2021·Granted Nov 21, 2023·0 cites·21 claims
- 2948US11720023B2Material for forming organic film, method for forming organic film, patterning process, and compoundSHINETSU CHEMICAL CO·Filed 2020·Granted Aug 8, 2023·0 cites·20 claims
- 3046US12215221B2Material for forming organic film, method for forming organic film, patterning process, and compoundSHINETSU CHEMICAL CO·Filed 2020·Granted Feb 4, 2025·0 cites·18 claims
- 3146US9312144B2Composition for forming a silicon-containing resist under layer film and patterning processSHINETSU CHEMICAL CO·Filed 2014·Granted Apr 12, 2016·0 cites·4 claims
- 3244US10620537B2Resist underlayer film composition, patterning process, method for forming resist underlayer film, and compound for resist underlayer film compositionSHINETSU CHEMICAL CO·Filed 2017·Granted Apr 14, 2020·0 cites·25 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →