Inventor · disambiguated record
Yu-Lan Chang
Also filed as: CHANG YU-LAN
13 granted patents·8 pending applications·39 citations·filing 2005–2008
88Inventor score
Files withUNITED MICROELECTRONICS CORP16HSIEH CHAO-CHING2CHANG YU-LAN1CHIANG YI-YIING1HUNG TSUNG-YU1
Top patents by PatentIndex Score
21 records- 0183US7390754B2Method of forming a silicideUNITED MICROELECTRONICS CORP·Filed 2006·Granted Jun 24, 2008·9 cites·15 claims
- 0281US7344978B2Fabrication method of semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2005·Granted Mar 18, 2008·9 cites·10 claims
- 0381US7214988B2Metal oxide semiconductor transistorUNITED MICROELECTRONICS CORP·Filed 2005·Granted May 8, 2007·8 cites·9 claims
- 0472US7229920B2Method of fabricating metal silicide layerUNITED MICROELECTRONICS CORP·Filed 2005·Granted Jun 12, 2007·4 cites·18 claims
- 0570US7884028B2Method of removing material layer and remnant metalUNITED MICROELECTRONICS CORP·Filed 2007·Granted Feb 8, 2011·3 cites·20 claims
- 0667US7892935B2Semiconductor processUNITED MICROELECTRONICS CORP·Filed 2006·Granted Feb 22, 2011·2 cites·12 claims
- 0766US7785972B2Method for fabricating semiconductor MOS deviceUNITED MICROELECTRONICS CORP·Filed 2006·Granted Aug 31, 2010·2 cites·17 claims
- 0857US7649263B2Semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2007·Granted Jan 19, 2010·1 cites·11 claims
- 0957US7553762B2Method for forming metal silicide layerUNITED MICROELECTRONICS CORP·Filed 2007·Granted Jun 30, 2009·1 cites·25 claims
- 1052US7572722B2Method of fabricating nickel silicideUNITED MICROELECTRONICS CORP·Filed 2007·Granted Aug 11, 2009·0 cites·10 claims
- 1150US7385294B2Semiconductor device having nickel silicide and method of fabricating nickel silicideUNITED MICROELECTRONICS CORP·Filed 2005·Granted Jun 10, 2008·0 cites·7 claims
- 1247US7595234B2Fabricating method for a metal oxide semiconductor transistorUNITED MICROELECTRONICS CORP·Filed 2006·Granted Sep 29, 2009·0 cites·22 claims
- 1345US2008224232A1Silicidation process for mos transistor and transistor structureUNITED MICROELECTRONICS CORP·Filed 2007·Application pending·0 cites
- 1444US2009061623A1Method of forming electrical connection structureUNITED MICROELECTRONICS CORP·Filed 2007·Application pending·0 cites
- 1543US7595264B2Fabrication method of semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2008·Granted Sep 29, 2009·0 cites·16 claims
- 1640US2007087573A1Pre-treatment method for physical vapor deposition of metal layer and method of forming metal silicide layerCHIANG YI-YIING·Filed 2005·Application pending·0 cites
- 1739US2007082494A1Method for forming silicide layerUNITED MICROELECTRONICS CORP·Filed 2006·Application pending·0 cites
- 1839US2008009134A1Method for fabricating metal silicideHUNG TSUNG-YU·Filed 2006·Application pending·0 cites
- 1937US2008171449A1Method for cleaning salicideHSIEH CHAO-CHING·Filed 2007·Application pending·0 cites
- 2036US2007059878A1Salicide processCHANG YU-LAN·Filed 2005·Application pending·0 cites
- 2130US2007020925A1Method of forming a nickel platinum silicideHSIEH CHAO-CHING·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →