Inventor · disambiguated record
Yun Han
Also filed as: HAN YUN · HAN YUN-JU
19 granted patents·11 pending applications·39 citations·filing 2020–2024
90Inventor score
Top patents by PatentIndex Score
30 records- 0197US11094543B1Defect correction on metal resistsTOKYO ELECTRON LTD·Filed 2020·Granted Aug 17, 2021·7 cites·21 claims
- 0297US11079682B1Methods for extreme ultraviolet (EUV) resist patterning developmentTOKYO ELECTRON LTD·Filed 2020·Granted Aug 3, 2021·18 cites·20 claims
- 0396US11342195B1Methods for anisotropic etch of silicon-based materials with selectivity to organic materialsTOKYO ELECTRON LTD·Filed 2021·Granted May 24, 2022·7 cites·20 claims
- 0495US11195723B1Non-atomic layer deposition (ALD) method of forming sidewall passivation layer during high aspect ratio carbon layer etchTOKYO ELECTRON LTD·Filed 2020·Granted Dec 7, 2021·5 cites·20 claims
- 0586US11605539B2Defect correction on metal resistsTOKYO ELECTRON LTD·Filed 2021·Granted Mar 14, 2023·1 cites·20 claims
- 0683US11527413B2Cyclic plasma etch processTOKYO ELECTRON LTD·Filed 2021·Granted Dec 13, 2022·1 cites·20 claims
- 0770US12189297B2Methods for extreme ultraviolet (EUV) resist patterning developmentTOKYO ELECTRON LTD·Filed 2021·Granted Jan 7, 2025·0 cites·20 claims
- 0869US12451329B2Plasma processing apparatus with tunable electrical characteristicTOKYO ELECTRON LTD·Filed 2021·Granted Oct 21, 2025·0 cites·20 claims
- 0968US11651967B2Non-atomic layer deposition (ALD) method of forming sidewall passivation layer during high aspect ratio carbon layer etchTOKYO ELECTRON LTD·Filed 2021·Granted May 16, 2023·0 cites·20 claims
- 1062US2025076771A1Methods for Extreme Ultraviolet (EUV) Resist Patterning DevelopmentTOKYO ELECTRON LTD·Filed 2024·Application pending·0 cites
- 1160US12288692B2Method of forming a FET structure by selective deposition of film on source/drain contactTOKYO ELECTRON LTD·Filed 2022·Granted Apr 29, 2025·0 cites·20 claims
- 1260US12266533B2Sacrificial capping layer for contact etchTOKYO ELECTRON LTD·Filed 2022·Granted Apr 1, 2025·0 cites·20 claims
- 1359US12341009B2Variable hardness amorphous carbon maskTOKYO ELECTRON LTD·Filed 2022·Granted Jun 24, 2025·0 cites·20 claims
- 1458US12300500B2Etching of polycrystalline semiconductorsTOKYO ELECTRON LTD·Filed 2022·Granted May 13, 2025·0 cites·21 claims
- 1557US12040176B2Technologies for high aspect ratio carbon etching with inserted charge dissipation layerTOKYO ELECTRON LTD·Filed 2022·Granted Jul 16, 2024·0 cites·20 claims
- 1657US2025183046A1Plasma process for etching a multilayer stackTOKYO ELECTRON LTD·Filed 2023·Application pending·0 cites
- 1756US11942307B2Plasma processing with radio frequency (RF) source and bias signal waveformsTOKYO ELECTRON LTD·Filed 2021·Granted Mar 26, 2024·0 cites·17 claims
- 1856US2025285911A1In situ etch rate differentiation through oxidationTOKYO ELECTRON LTD·Filed 2024·Application pending·0 cites
- 1955US12237216B2Method for filling recessed features in semiconductor devices with a low-resistivity metalTOKYO ELECTRON LTD·Filed 2022·Granted Feb 25, 2025·0 cites·21 claims
- 2055US2024379372A1Method for ion-assisted self-limited conformal etchTOKYO ELECTRON LTD·Filed 2024·Application pending·0 cites
- 2155US2025273466A1Vertical feature growth using fluorine-containing gasTOKYO ELECTRON LTD·Filed 2024·Application pending·0 cites
- 2253US12400872B2Sacrificial capping layer for gate protectionTOKYO ELECTRON LTD·Filed 2022·Granted Aug 26, 2025·0 cites·20 claims
- 2353US2024234158A1Method for Etching Features in a Layer in a SubstrateTOKYO ELECTRON LTD·Filed 2023·Application pending·0 cites
- 2452US2025246437A1Selective etching in semiconductor devicesTOKYO ELECTRON LTD·Filed 2024·Application pending·0 cites
- 2551US2023230834A1Extreme ultra-violet (euv) lithography processes for patterning photoresist and photolithography masks used thereinSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
- 2650US11961735B2Cyclic plasma processingTOKYO ELECTRON LTD·Filed 2021·Granted Apr 16, 2024·0 cites·20 claims
- 2750US2023343598A1Method For Improving Etch Rate And Critical Dimension Uniformity When Etching High Aspect Ratio Features Within A Hard Mask LayerTOKYO ELECTRON LTD·Filed 2022·Application pending·0 cites
- 2850US2024186149A1Methods for Etching MolybdenumTOKYO ELECTRON LTD·Filed 2022·Application pending·0 cites
- 2949US11532517B2Localized etch stop layerTOKYO ELECTRON LTD·Filed 2020·Granted Dec 20, 2022·0 cites·16 claims
- 3045US2022246747A1Contact Etch Stop Layer with Improved Etch Stop CapabilityTOKYO ELECTRON LTD·Filed 2021·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →