Inventor · disambiguated record
Yuan-Yang Hsiao
Also filed as: HSIAO YUAN-YANG
27 granted patents·19 pending applications·30 citations·filing 2017–2025
94Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD46
Top patents by PatentIndex Score
46 records- 0198US12230566B2Metal-insulator-metal structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 18, 2025·3 cites·20 claims
- 0298US11114373B1Metal-insulator-metal structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 7, 2021·9 cites·20 claims
- 0396US11842959B2Metal-Insulator-Metal structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 12, 2023·2 cites·20 claims
- 0495US11728262B2Metal plate corner structure on metal insulator metalTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 15, 2023·3 cites·20 claims
- 0594US11705384B2Through vias of semiconductor structure and method of forming thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 18, 2023·2 cites·20 claims
- 0692US11961880B2Metal-insulator-metal structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 16, 2024·2 cites·20 claims
- 0792US11342408B2Metal-insulator-metal structure and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 24, 2022·2 cites·20 claims
- 0891US11728375B2Metal-insulator-metal (MIM) capacitor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 15, 2023·1 cites·20 claims
- 0986US12477756B2Metal-insulator-metal structure and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Nov 18, 2025·0 cites·20 claims
- 1084US11715756B2Device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 1, 2023·1 cites·20 claims
- 1184US10734474B2Metal-insulator-metal structure and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 4, 2020·2 cites·19 claims
- 1284US2025357392A1Reduction of cracks in passivation layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1382US11031458B2Metal-insulator-metal (MIM) capacitor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 8, 2021·2 cites·20 claims
- 1480US12444674B2Back-end-of-line passive device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 14, 2025·0 cites·20 claims
- 1579US12300640B2Semiconductor device and method of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 13, 2025·0 cites·20 claims
- 1679US11923405B2Metal-insulator-metal structure and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 5, 2024·0 cites·20 claims
- 1779US2025192026A1Metal-Insulator-Metal StructureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1878US12266592B2Through vias of semiconductor structure and method of forming thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 1, 2025·0 cites·20 claims
- 1978US12107041B2Metal plate corner structure on metal insulator metalTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 1, 2024·0 cites·20 claims
- 2078US12080753B2Device structure with a redistribution layer and a buffer layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 3, 2024·0 cites·20 claims
- 2178US2024379531A1Back-end-of-line passive device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2278US2025349703A1Dummy Metal-Insulator-Metal Structures Within ViasTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2377US2024379593A1Reduction of cracks in passivation layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2477US2024379529A1Metal plate corner structure on metal insulator metalTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2577US2024371920A1Device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2676US2025364397A1Semiconductor packaging structure and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2776US2025233090A1Semiconductor device and method of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2876US2025343131A1Semiconductor Structures And Methods Of Forming The SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2976US2025201672A1Through vias of semiconductor structure and method of forming thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3075US2025357373A1Passive Device Structure Stress ReductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3174US10468478B2Metal-insulator-metal (MIM) capacitor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 5, 2019·1 cites·20 claims
- 3274US2024379734A1Methods of manufacturing semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3373US11990401B2Back-end-of-line passive device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 21, 2024·0 cites·20 claims
- 3472US11362170B2Metal-insulator-metal (MIM) capacitor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 14, 2022·0 cites·20 claims
- 3572US2024274653A1Metal-insulator-metal structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3672US2025300065A1High voltage passive device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3772US2024387617A1Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3870US12087714B2Reduction of cracks in passivation layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 10, 2024·0 cites·20 claims
- 3970US11728295B2Semiconductor device and method of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 15, 2023·0 cites·20 claims
- 4068US12327785B2High voltage passive device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 10, 2025·0 cites·20 claims
- 4167US12368094B2Semiconductor structures and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 22, 2025·0 cites·20 claims
- 4266US2023352396A1Dummy Metal-Insulator-Metal Structures Within ViasTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 4365US2025185262A1Back-end-of-line passive device structure having common connection to groundTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4464US12218186B2Back-end-of-line passive device structure having common connection to groundTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 4, 2025·0 cites·20 claims
- 4563US12417973B2Semiconductor packaging structure and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 16, 2025·0 cites·20 claims
- 4661US2022336576A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →