Inventor · disambiguated record
Yushi Hu
Also filed as: HU YUSHI
83 granted patents·14 pending applications·415 citations·filing 2013–2025
99Inventor score
Files withYANGTZE MEMORY TECH CO LTD51MICRON TECHNOLOGY INC36WUXI SMART MEMORIES TECH CO LTD6WUXI PETABYTE TECH CO LTD2ERICSSON TELEFON AB L M (publ)1
Top patents by PatentIndex Score
97 records- 0198US11133325B2Memory cell structure of a three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Sep 28, 2021·14 cites·9 claims
- 0298US10403631B1Three-dimensional ferroelectric memory devicesWUXI PETABYTE TECH CO LTD·Filed 2018·Granted Sep 3, 2019·72 cites·30 claims
- 0398US10340286B2Methods of forming NAND memory arraysMICRON TECHNOLOGY INC·Filed 2018·Granted Jul 2, 2019·22 cites·18 claims
- 0498US10283452B2Three-dimensional memory devices having a plurality of NAND stringsYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted May 7, 2019·61 cites·13 claims
- 0598US10147732B1Source structure of three-dimensional memory device and method for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Dec 4, 2018·66 cites·21 claims
- 0697US10283520B2Elevationally-extending string of memory cells individually comprising a programmable charge storage transistor and method of forming an elevationally-extending string of memory cells individually comprising a programmable charge storage transistorMICRON TECHNOLOGY INC·Filed 2016·Granted May 7, 2019·20 cites·31 claims
- 0796US10566336B1Three-dimensional memory devices having through array contacts and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Feb 18, 2020·11 cites·17 claims
- 0896US10256249B2Integrated structuresMICRON TECHNOLOGY INC·Filed 2017·Granted Apr 9, 2019·10 cites·7 claims
- 0994US11031333B2Three-dimensional memory devices having a plurality of NAND stringsYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Jun 8, 2021·8 cites·19 claims
- 1094US9859845B2Dual-band signal transmissionERICSSON TELEFON AB L M (publ)·Filed 2014·Granted Jan 2, 2018·30 cites·16 claims
- 1193US10431591B2NAND memory arraysMICRON TECHNOLOGY INC·Filed 2017·Granted Oct 1, 2019·7 cites·25 claims
- 1293US2025359048A1Three-dimensional memory devices having through array contacts and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2025·Application pending·0 cites
- 1392US11211397B2Three-dimensional memory devices and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Dec 28, 2021·6 cites·14 claims
- 1492US10658378B2Through array contact (TAC) for three-dimensional memory devicesYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted May 19, 2020·9 cites·20 claims
- 1592US10344398B2Source material for electronic device applicationsMICRON TECHNOLOGY INC·Filed 2016·Granted Jul 9, 2019·7 cites·14 claims
- 1691US10867678B2Three-dimensional memory devicesYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Dec 15, 2020·8 cites·19 claims
- 1791US10868031B2Multiple-stack three-dimensional memory device and fabrication method thereofYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Dec 15, 2020·5 cites·6 claims
- 1891US10483280B1Method of forming staircase structures for three-dimensional memory device double-sided routingYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Nov 19, 2019·7 cites·20 claims
- 1991US9972628B1Conductive structures, wordlines and transistorsMICRON TECHNOLOGY INC·Filed 2016·Granted May 15, 2018·7 cites·19 claims
- 2091US9613973B2Memory having a continuous channelMICRON TECHNOLOGY INC·Filed 2015·Granted Apr 4, 2017·5 cites·24 claims
- 2190US11991880B2Three-dimensional memory devices and fabricating methods thereofYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted May 21, 2024·2 cites·9 claims
- 2290US2025098169A1Integrated StructuresMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 2389US10515975B1Method for forming dual-deck channel hole structure of three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Dec 24, 2019·6 cites·20 claims
- 2487US10937806B2Through array contact (TAC) for three-dimensional memory devicesYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Mar 2, 2021·2 cites·20 claims
- 2586US11532636B2Three-dimensional memory devices having through array contacts and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Dec 20, 2022·1 cites·20 claims
- 2686US10644015B2Memory cell structure of a three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted May 5, 2020·3 cites·9 claims
- 2786US9780102B2Memory cell pillar including source junction plugMICRON TECHNOLOGY INC·Filed 2014·Granted Oct 3, 2017·4 cites·31 claims
- 2885US2024032293A1Three-dimensional memory devices having through array contacts and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2023·Application pending·0 cites
- 2984US9099309B2Method providing an epitaxial growth having a reduction in defects and resulting structureMICRON TECHNOLOGY INC·Filed 2013·Granted Aug 4, 2015·5 cites·19 claims
- 3084US2025280538A1Multiple-stack three-dimensional memory device and fabrication method thereofYANGTZE MEMORY TECH CO LTD·Filed 2025·Application pending·0 cites
- 3183US2023255025A1Three-dimensional memory devices having through array contacts and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2023·Application pending·0 cites
- 3282US10847528B2Memory cell structure of a three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Nov 24, 2020·1 cites·20 claims
- 3382US10804279B2Source structure of three-dimensional memory device and method for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Oct 13, 2020·4 cites·16 claims
- 3479US12446217B23D NAND memory device and method of forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2023·Granted Oct 14, 2025·0 cites·20 claims
- 3579US2025142827A1Integrated StructuresMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 3678US12279420B2Memory having a continuous channelMICRON TECHNOLOGY INC·Filed 2022·Granted Apr 15, 2025·0 cites·7 claims
- 3778US10553611B2Memory arrays and methods of fabricating integrated structureMICRON TECHNOLOGY INC·Filed 2019·Granted Feb 4, 2020·1 cites·9 claims
- 3878US10164044B2Gate stacksMICRON TECHNOLOGY INC·Filed 2015·Granted Dec 25, 2018·2 cites·32 claims
- 3978US2025227927A1Memory having a continuous channelMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 4077US12185537B2Integrated structuresMICRON TECHNOLOGY INC·Filed 2021·Granted Dec 31, 2024·0 cites·31 claims
- 4177US11201164B2Memory devicesMICRON TECHNOLOGY INC·Filed 2019·Granted Dec 14, 2021·1 cites·20 claims
- 4276US11690219B2Three-dimensional memory devices having through array contacts and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Jun 27, 2023·0 cites·20 claims
- 4375US11581322B2Three-dimensional memory devices having through array contacts and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Feb 14, 2023·0 cites·20 claims
- 4475US10910390B2Memory device and forming method thereofYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Feb 2, 2021·1 cites·20 claims
- 4575US2023422504A1Three-dimensional memory devices and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2023·Application pending·0 cites
- 4674US9741732B2Integrated structuresMICRON TECHNOLOGY INC·Filed 2015·Granted Aug 22, 2017·1 cites·26 claims
- 4773US12063780B2Memory cell structure of a three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Aug 13, 2024·0 cites·20 claims
- 4873US11699657B2Three-dimensional memory devices having a plurality of NAND strings located between a substrate and a single crystalline silicon layerYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Jul 11, 2023·0 cites·17 claims
- 4973US11049866B2Three-dimensional memory devices having through array contacts and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Jun 29, 2021·0 cites·20 claims
- 5073US10879254B2Three-dimensional memory devices having through array contacts and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Dec 29, 2020·0 cites·20 claims
Showing the top 50 of 97 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →