Inventor · disambiguated record
Yuuki Ishida
Also filed as: ISHIDA YUUKI
2 granted patents·18 citations·filing 2008–2012
58Inventor score
Technology areasH10P
Files withMOMOSE KENJI2
Top patents by PatentIndex Score
2 records- 0191US8716718B2Epitaxial SiC single crystal substrate and method of manufacture of epitaxial SiC single crystal substrateMOMOSE KENJI·Filed 2012·Granted May 6, 2014·15 cites·13 claims
- 0269US8293623B2Epitaxial SiC single crystal substrate and method of manufacture of epitaxial SiC single crystal substrateMOMOSE KENJI·Filed 2008·Granted Oct 23, 2012·3 cites·14 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →