Inventor · disambiguated record
Yu-Wei Jiang
Also filed as: JIANG YU · JIANG YU-WEI
72 granted patents·28 pending applications·277 citations·filing 2010–2025
98Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD70MACRONIX INT CO LTD24LEE SI-CHEN4AGENCY SCIENCE TECH & RES2
Top patents by PatentIndex Score
100 records- 0199US9412752B1Reference line and bit line structure for 3D memoryMACRONIX INT CO LTD·Filed 2015·Granted Aug 9, 2016·171 cites·17 claims
- 0297US10593697B1Memory deviceMACRONIX INT CO LTD·Filed 2019·Granted Mar 17, 2020·15 cites·20 claims
- 0397US9748264B1Semiconductor structure and manufacturing method thereofMACRONIX INT CO LTD·Filed 2016·Granted Aug 29, 2017·20 cites·18 claims
- 0496US11710790B2Memory array channel regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 25, 2023·4 cites·20 claims
- 0595US11903214B2Three-dimensional ferroelectric random access memory devices and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 13, 2024·2 cites·20 claims
- 0692US11723199B2Protective liner layers in 3D memory structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 8, 2023·2 cites·20 claims
- 0792US11640974B2Memory array isolation structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 2, 2023·2 cites·20 claims
- 0892US9425209B1Multilayer 3-D structure with mirror image landing regionsMACRONIX INT CO LTD·Filed 2015·Granted Aug 23, 2016·22 cites·20 claims
- 0991US12376310B2Memory cell having source or drain electrode with kink portion, memory array and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 29, 2025·1 cites·20 claims
- 1090US11257836B2Dummy vertical structures for etching in 3D NAND memory and other circuitsMACRONIX INT CO LTD·Filed 2020·Granted Feb 22, 2022·2 cites·11 claims
- 1190US10930669B2Three dimensional memory device and method for fabricating the sameMACRONIX INT CO LTD·Filed 2019·Granted Feb 23, 2021·5 cites·15 claims
- 1288US2025366006A1Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1388US2025318140A1Semiconductor structure and method for forming thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1487US2025311225A1Memory device and method for making sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1586US2025287603A1Three-dimensional ferroelectric random access memory devices and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1685US12336183B2Three-dimensional ferroelectric random access memory devices and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jun 17, 2025·0 cites·20 claims
- 1785US10910402B1Three-dimensional and flash memory and manufacturing method thereofMACRONIX INT CO LTD·Filed 2019·Granted Feb 2, 2021·3 cites·16 claims
- 1885US10811427B1Semiconductor structure and manufacturing method thereofMACRONIX INT CO LTD·Filed 2019·Granted Oct 20, 2020·4 cites·7 claims
- 1985US9685408B1Contact pad structure and method for fabricating the sameMACRONIX INT CO LTD·Filed 2016·Granted Jun 20, 2017·7 cites·12 claims
- 2085US2025294771A1High selectivity isolation structure for improving effectiveness of 3d memory fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2184US12419054B2Three-dimensional memory array with local line selectorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 16, 2025·0 cites·20 claims
- 2284US12356628B2Memory device and method for making sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 8, 2025·0 cites·20 claims
- 2384US12058860B2Memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 6, 2024·1 cites·20 claims
- 2483US12363911B2Semiconductor structure and method for forming thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 15, 2025·0 cites·20 claims
- 2583US11094711B2Memory deviceMACRONIX INT CO LTD·Filed 2019·Granted Aug 17, 2021·3 cites·19 claims
- 2683US10340281B2Three-dimensional semiconductor device and method of manufacturing the sameMACRONIX INT CO LTD·Filed 2017·Granted Jul 2, 2019·4 cites·20 claims
- 2783US2025318137A1Three-dimensional memory device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2882US12363907B2Memory device comprising conductive pillarsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 15, 2025·0 cites·20 claims
- 2982US12288820B2Transistor, integrated circuit, and manufacturing method of transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 29, 2025·0 cites·20 claims
- 3082US2024349508A1Method of forming memory device including conductive pillarsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3181US12349362B2High selectivity isolation structure for improving effectiveness of 3D memory fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 1, 2025·0 cites·20 claims
- 3281US12218250B2Oxide semiconductor transistor structure in 3-d device and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 4, 2025·0 cites·20 claims
- 3381US2024389318A1Semiconductor memory device and method for making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3481US2025133774A1Oxide Semiconductor Transistor Structure in 3-D Device and Methods for Forming the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3580US12464755B2Integrated circuit, transistor and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 4, 2025·0 cites·20 claims
- 3680US12382639B2Three-dimensional memory device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 5, 2025·0 cites·20 claims
- 3780US2025120091A1Memory array source/drain electrode structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3879US12144182B2Memory device and method for making sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 12, 2024·0 cites·20 claims
- 3979US12069863B2Method of forming memory device comprising conductive pillarsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 20, 2024·0 cites·20 claims
- 4079US11069708B2Memory device and method for manufacturing the sameMACRONIX INT CO LTD·Filed 2019·Granted Jul 20, 2021·2 cites·20 claims
- 4179US2024365550A1Memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4279US2024363527A1Semiconductor device, and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4379US2025331190A1Method of forming memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4479US2024389333A1Memory device and method for making sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4579US2024387727A1Manufacturing method of transistor and manufacturing method of integrated circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4678US12219777B2Memory array source/drain electrode structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 4, 2025·0 cites·20 claims
- 4778US12068245B2Memory device, semiconductor device, and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 20, 2024·0 cites·20 claims
- 4878US12035534B2Three-dimensional memory array with local line selectorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 9, 2024·0 cites·20 claims
- 4978US2024379778A1Memory Array Isolation StructuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 5076US12471346B2Memory array isolation structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 11, 2025·0 cites·20 claims
Showing the top 50 of 100 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →