Inventor · disambiguated record

Yun-Feng Kao

Also filed as: KAO YUN-FENG

19 granted patents·26 pending applications·0 citations·filing 2021–2025

87Inventor score

Technology areasH10D H10W G11C H10B H10P

Files withTAIWAN SEMICONDUCTOR MFG CO LTD45

Top patents by PatentIndex Score

45 records

0186US2025356915A1Physically unclonable function deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
0281US2025318154A1Capacitor structure and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
0381US2025359045A1U-shaped channel access transistors and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
0480US2025359338A1Back-end-of-line semiconductor device structure providing a not-gate logic function and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
0579US2025357321A1Back-end-of-line cmos inverter having reduced size and reduced short-channel effects and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
0677US12513940B2Vertical transistors and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 30, 2025·0 cites·20 claims
0777US2025351554A1High density capacitor and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
0877US2024379735A1Capacitor structure and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
0974US12394707B2Back-end-of-line CMOS inverter having reduced size and reduced short-channel effects and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 19, 2025·0 cites·20 claims
1074US2025029918A1Method for forming three-dimensional integrated structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
1174US2024379876A1Transistor device having fin-shaped channel and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
1273US2024381613A1Data backup unit for static random-access memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
1373US2024395322A1Reconfigurable in-memory physically unclonable function device and method of operating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
1472US12300294B2Cantilever nanoelectromechanical decoder circuit and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 13, 2025·0 cites·20 claims
1572US2025316595A1Back-end-of-line memory devices and methods for operating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1671US12363919B2Capacitor structure and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 15, 2025·0 cites·20 claims
1771US2024224538A1Back-end active device and logic gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
1871US2025069648A1Programming and reading circuit for dynamic random access memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
1969US12419113B2Back-end-of-line semiconductor device structure providing a not-gate logic function and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 16, 2025·0 cites·20 claims
2069US12142695B2Transistor device having fin-shaped channel and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 12, 2024·0 cites·20 claims
2169US12002884B2Dual gate vertical thin film transistors and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 4, 2024·0 cites·20 claims
2268US12309990B2Data backup unit for static random-access memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 20, 2025·0 cites·20 claims
2368US12249371B2Reconfigurable in-memory physically unclonable functionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 11, 2025·0 cites·20 claims
2468US12148691B2Three-dimensional integrated structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 19, 2024·0 cites·20 claims
2568US2025203842A1Memory device having capacitor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2667US12424547B2Back-end-of-line memory devices and methods for operating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 23, 2025·0 cites·20 claims
2767US11963365B2Back-end active device, semiconductor device and semiconductor chipTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 16, 2024·0 cites·20 claims
2867US11895825B2Semiconductor device including integrated capacitor and vertical channel transistor and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 6, 2024·0 cites·18 claims
2966US12267992B2Memory device having capacitor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 1, 2025·0 cites·20 claims
3066US12176022B2Programming and reading circuit for dynamic random access memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 24, 2024·0 cites·19 claims
3166US2023011756A1High density capacitor and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
3262US2025318106A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
3361US2025240940A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
3461US2023164989A1U-shaped channel access transistors and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
3559US2025374608A1Semiconductor device and methods of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
3658US12249608B2Method for manufacturing semiconductor structure and semiconductor structure thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 11, 2025·0 cites·20 claims
3756US2024421036A1Back end dielectric-based memory structure in a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
3855US2024395824A1Back-end-of-line cmos inverter with vertical channels and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
3954US11895832B2Memory integrated circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 6, 2024·0 cites·20 claims
4054US2024387542A1Semiconductor device and semiconductor dieTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
4153US2024074137A1Capacitorless dynamic random access memory and methods of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
4252US11695039B2Semiconductor device including an active component and a barrier pattern surrounding the active component and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 4, 2023·0 cites·20 claims
4352US2025239286A1Memory circuit and method of operating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
4451US2024086692A1Back end floating gate structure in a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
4550US12148471B2Reconfigurable computational memory device, operation method of the reconfigurable computational memory device and semiconductor die including the reconfigurable computational memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 19, 2024·0 cites·20 claims

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →