Inventor · disambiguated record
Yue Ke
Also filed as: KE YUE
20 granted patents·3 pending applications·90 citations·filing 2013–2019
94Inventor score
Top patents by PatentIndex Score
23 records- 0194US9577100B2FinFET and nanowire semiconductor devices with suspended channel regions and gate structures surrounding the suspended channel regionsGLOBALFOUNDRIES INC·Filed 2014·Granted Feb 21, 2017·17 cites·13 claims
- 0294US9287264B1Epitaxially grown silicon germanium channel FinFET with silicon underlayerGLOBALFOUNDRIES INC·Filed 2014·Granted Mar 15, 2016·15 cites·12 claims
- 0392US9634084B1Conformal buffer layer in source and drain regions of fin-type transistorsGLOBALFOUNDRIES INC·Filed 2016·Granted Apr 25, 2017·12 cites·19 claims
- 0488US9875939B1Methods of forming uniform and pitch independent fin recessGLOBALFOUNDRIES INC·Filed 2016·Granted Jan 23, 2018·5 cites·20 claims
- 0587US9123826B1Single crystal source-drain merged by polycrystalline materialIBM·Filed 2014·Granted Sep 1, 2015·8 cites·20 claims
- 0686US9685334B1Methods of forming semiconductor fin with carbon dopant for diffusion controlGLOBALFOUNDRIES INC·Filed 2016·Granted Jun 20, 2017·6 cites·19 claims
- 0785US9246003B2FINFET structures with fins recessed beneath the gateGLOBALFOUNDRIES INC·Filed 2013·Granted Jan 26, 2016·7 cites·18 claims
- 0883US10243077B2FinFET with dielectric isolation after gate module for improved source and drain region epitaxial growthIBM·Filed 2017·Granted Mar 26, 2019·2 cites·10 claims
- 0980US9917190B2FinFET with dielectric isolation after gate module for improved source and drain region epitaxial growthIBM·Filed 2015·Granted Mar 13, 2018·2 cites·7 claims
- 1080US9312364B2finFET with dielectric isolation after gate module for improved source and drain region epitaxial growthIBM·Filed 2014·Granted Apr 12, 2016·3 cites·11 claims
- 1178US9318608B1Uniform junction formation in FinFETsIBM·Filed 2014·Granted Apr 19, 2016·3 cites·5 claims
- 1277US9349650B2Low resistance and defect free epitaxial semiconductor material for providing merged FinFETsGLOBALFOUNDRIES INC·Filed 2014·Granted May 24, 2016·3 cites·16 claims
- 1376US9577099B2Diamond shaped source drain epitaxy with underlying buffer layerGLOBALFOUNDRIES INC·Filed 2015·Granted Feb 21, 2017·2 cites·17 claims
- 1469US9466616B2Uniform junction formation in FinFETsGLOBALFOUNDRIES INC·Filed 2016·Granted Oct 11, 2016·1 cites·5 claims
- 1567US11081583B2FinFET with dielectric isolation after gate module for improved source and drain region epitaxial growthIBM·Filed 2019·Granted Aug 3, 2021·0 cites·10 claims
- 1667US9536985B2Epitaxial growth of material on source/drain regions of FinFET structureGLOBALFOUNDRIES INC·Filed 2014·Granted Jan 3, 2017·2 cites·11 claims
- 1766US9349649B2Low resistance and defect free epitaxial semiconductor material for providing merged FinFETsGLOBALFOUNDRIES INC·Filed 2014·Granted May 24, 2016·1 cites·17 claims
- 1862US9752251B2Self-limiting selective epitaxy process for preventing merger of semiconductor finsIBM·Filed 2013·Granted Sep 5, 2017·1 cites·25 claims
- 1957US10615279B2FinFET with dielectric isolation after gate module for improved source and drain region epitaxial growthIBM·Filed 2016·Granted Apr 7, 2020·0 cites·11 claims
- 2048US2016163707A1Epitaxially grown silicon germanium channel finfet with silicon underlayerGLOBALFOUNDRIES INC·Filed 2016·Application pending·0 cites
- 2139US9075135B2Reporting connection failureIBM·Filed 2013·Granted Jul 7, 2015·0 cites·8 claims
- 2239US2014034818A1Reporting connection failureIBM·Filed 2013·Application pending·0 cites
- 2339US2019113469A1Angled beam inspection system for semiconductor devicesGLOBALFOUNDRIES INC·Filed 2017·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →