Inventor · disambiguated record
Yueh-Chuan Lee
Also filed as: LEE YUEH-CHUAN
46 granted patents·12 pending applications·578 citations·filing 1999–2024
97Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD34PROMOS TECHNOLOGIES INC14NAT SCIENCE COUNCIL4LEE YUEH-CHUAN1NI BAI-ROU1
Top patents by PatentIndex Score
58 records- 0198US6855610B2Method of forming self-aligned contact structure with locally etched gate conductive layerPROMOS TECHNOLOGIES INC·Filed 2002·Granted Feb 15, 2005·375 cites·29 claims
- 0290US12363459B2Photosensing pixel including self-aligned light shielding layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 15, 2025·1 cites·20 claims
- 0389US9761623B2Backside illuminated (BSI) image sensor with a reflectorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 12, 2017·7 cites·20 claims
- 0487US9318630B2Pixel with raised photodiode structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Apr 19, 2016·8 cites·17 claims
- 0586US10170517B2Method for forming image sensor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 1, 2019·6 cites·17 claims
- 0685US6294832B1Semiconductor device having structure of copper interconnect/barrier dielectric liner/low-k dielectric trench and its fabrication methodNAT SCIENCE COUNCIL·Filed 2000·Granted Sep 25, 2001·42 cites·23 claims
- 0778US6821842B1[DRAM structure and fabricating method thereof]PROMOS TECHNOLOGIES INC·Filed 2004·Granted Nov 23, 2004·21 cites·18 claims
- 0877US12507491B2Storage node light shield for pixel of image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 23, 2025·0 cites·20 claims
- 0976US11735609B2Image sensor with shallow trench edge dopingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 22, 2023·0 cites·20 claims
- 1076US6680237B2Method of manufacturing deep trench capacitorPROMOS TECHNOLOGIES INC·Filed 2001·Granted Jan 20, 2004·22 cites·20 claims
- 1176US6486057B1Process for preparing Cu damascene interconnectionNAT SCIENCE COUNCIL·Filed 2002·Granted Nov 26, 2002·24 cites·7 claims
- 1273US10998360B2Image sensor with shallow trench edge dopingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 4, 2021·0 cites·20 claims
- 1372US10998359B2Image sensor with shallow trench edge dopingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 4, 2021·0 cites·20 claims
- 1470US11133340B2Device comprising photodiode and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 28, 2021·0 cites·20 claims
- 1570US9368543B2Image sensor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jun 14, 2016·0 cites·14 claims
- 1670US2022367538A1Apparatus and methods for effective impurity getteringTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 1768US12113079B2Image sensor with shallow trench edge dopingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 8, 2024·0 cites·20 claims
- 1868US11158591B2Bond pad structure for bonding improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 26, 2021·0 cites·20 claims
- 1967US12046614B2Apparatus and methods for effective impurity getteringTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 23, 2024·0 cites·19 claims
- 2067US10714516B2Image sensor with shallow trench edge dopingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 14, 2020·0 cites·20 claims
- 2165US9748187B2Wafer structure and method for wafer dicingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Aug 29, 2017·1 cites·19 claims
- 2265US6774461B2Method of reducing thick film stress of spin-on dielectric and the resulting sandwich dielectric structureNAT SCIENCE COUNCIL·Filed 2002·Granted Aug 10, 2004·10 cites·7 claims
- 2362US10672810B2CMOS image sensor with shallow trench edge dopingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 2, 2020·0 cites·20 claims
- 2462US9748290B2Mechanisms for forming image sensor with lateral doping gradientTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Aug 29, 2017·1 cites·17 claims
- 2562US2025393318A1Methods for improving image lag in image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2661US6849529B2Deep-trench capacitor with hemispherical grain silicon surface and method for making the samePROMOS TECHNOLOGIES INC·Filed 2002·Granted Feb 1, 2005·8 cites·17 claims
- 2760US10879123B2Protected chip-scale package (CSP) pad structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 29, 2020·0 cites·20 claims
- 2859US10734339B2Bond pad structure for bonding improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 4, 2020·0 cites·20 claims
- 2958US10510606B2Protected chip-scale package (CSP) pad structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 17, 2019·0 cites·20 claims
- 3058US7098102B2Shallow trench isolation structure and dynamic random access memory, and fabricating methods thereofPROMOS TECHNOLOGIES INC·Filed 2003·Granted Aug 29, 2006·8 cites·16 claims
- 3157US7009238B2Deep-trench capacitor with hemispherical grain silicon surface and method for making the samePROMOS TECHNOLOGIES INC·Filed 2004·Granted Mar 7, 2006·6 cites·12 claims
- 3257US6251753B1Method of sidewall capping for degradation-free damascene trenches of low dielectric constant dielectric by selective liquid-phase depositionFiled 1999·Granted Jun 26, 2001·25 cites·13 claims
- 3357US2025224365A1Semiconductor structure including micro wells with different heightsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3454US11139212B2Semiconductor arrangement and method for makingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 5, 2021·0 cites·20 claims
- 3554US10276441B2Protected chip-scale package (CSP) pad structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 30, 2019·0 cites·20 claims
- 3654US10014269B2Method for wafer dicingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 3, 2018·0 cites·20 claims
- 3753US10276524B2Bond pad structure for bonding improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 30, 2019·0 cites·20 claims
- 3853US2024151686A1Biological material sensing semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3952US7034354B2Semiconductor structure with lining layer partially etched on sidewall of the gatePROMOS TECHNOLOGIES INC·Filed 2003·Granted Apr 25, 2006·4 cites·15 claims
- 4052US6953961B2DRAM structure and fabricating method thereofPROMOS TECHNOLOGIES INC·Filed 2004·Granted Oct 11, 2005·4 cites·10 claims
- 4150US10515989B2Device comprising photodiode and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 24, 2019·0 cites·20 claims
- 4250US9502463B2Method for fabricating image sensor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 22, 2016·0 cites·20 claims
- 4349US2009008781A1Semiconductor devicePROMOS TECHNOLOGIES INC·Filed 2008·Application pending·0 cites
- 4447US6987044B2Volatile memory structure and method for forming the samePROMOS TECHNOLOGIES INC·Filed 2003·Granted Jan 17, 2006·3 cites·12 claims
- 4545US2006128157A1Semiconductor structure with partially etched gate and method of fabricating the sameLEE YUEH-CHUAN·Filed 2006·Application pending·0 cites
- 4645US2005127453A1Method of forming self-aligned contact structure with locally etched gate conductive layerPROMOS TECHNOLOGIES INC·Filed 2005·Application pending·0 cites
- 4743US2006017165A1Semiconductor device and manufacturing method thereofNI BAI-ROU·Filed 2005·Application pending·0 cites
- 4842US9859325B2Complementary metal-oxide-semiconductor (CMOS) image sensor with silicon and silicon germaniumTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 2, 2018·0 cites·20 claims
- 4941US9721987B2Pixel with transistor gate covering photodiodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Aug 1, 2017·0 cites·20 claims
- 5040US7241659B2Volatile memory devices and methods for forming samePROMOS TECHNOLOGIES INC·Filed 2004·Granted Jul 10, 2007·2 cites·5 claims
Showing the top 50 of 58 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →