Inventor · disambiguated record
Yu-Chung Lien
Also filed as: LIEN YU-CHUNG
75 granted patents·62 pending applications·205 citations·filing 2013–2025
98Inventor score
Files withMICRON TECHNOLOGY INC83SANDISK TECHNOLOGIES LLC45WESTERN DIGITAL TECH INC6NAT APPLIED RES LABORATORIES2MICRO TECH INC1
Top patents by PatentIndex Score
137 records- 0198US11373710B1Time division peak power management for non-volatile storageSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Jun 28, 2022·22 cites·20 claims
- 0298US11270776B1Countermeasure for reducing peak current during program operation under first read conditionSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Mar 8, 2022·27 cites·20 claims
- 0397US11081162B1Source side precharge and boosting improvement for reverse order programSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Aug 3, 2021·9 cites·20 claims
- 0497US11037635B1Power management for multi-plane read operationsSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Jun 15, 2021·10 cites·17 claims
- 0596US11189337B1Multi-stage voltage control for peak and average current reduction of open blocksWESTERN DIGITAL TECH INC·Filed 2020·Granted Nov 30, 2021·6 cites·20 claims
- 0696US10861537B1Countermeasures for first read issueSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Dec 8, 2020·30 cites·20 claims
- 0795US11361835B1Countermeasure for reducing peak current during programming by optimizing timing of latch scan operationsSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Jun 14, 2022·5 cites·20 claims
- 0895US11335411B1Erase operation for memory device with staircase word line voltage during erase pulseSANDISK TECHNOLOGIES LLC·Filed 2021·Granted May 17, 2022·14 cites·20 claims
- 0995US11114178B1Physical defect detection in an integrated memory assemblyWESTERN DIGITAL TECH INC·Filed 2020·Granted Sep 7, 2021·5 cites·20 claims
- 1095US10727276B1Three-dimensional NAND memory device containing two terminal selector and methods of using and making thereofSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Jul 28, 2020·15 cites·14 claims
- 1194US11972122B2Memory read operation using a voltage pattern based on a read command typeMICRON TECHNOLOGY INC·Filed 2022·Granted Apr 30, 2024·2 cites·25 claims
- 1294US10636498B1Managing bit-line settling time in non-volatile memorySANDISK TECHNOLOGIES LLC·Filed 2019·Granted Apr 28, 2020·15 cites·20 claims
- 1393US12014049B2Adaptive sensing time for memory operationsMICRON TECHNOLOGY INC·Filed 2022·Granted Jun 18, 2024·2 cites·20 claims
- 1492US11475959B1Reduced program time for memory cells using negative bit line voltage for enhanced step up of program biasSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Oct 18, 2022·4 cites·20 claims
- 1592US11385810B2Dynamic staggering for programming in nonvolatile memorySANDISK TECHNOLOGIES LLC·Filed 2020·Granted Jul 12, 2022·3 cites·18 claims
- 1691US11335413B2Ramp rate control for peak and average current reduction of open blocksWESTERN DIGITAL TECH INC·Filed 2020·Granted May 17, 2022·3 cites·20 claims
- 1790US10902925B1Peak and average current reduction for open block conditionSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Jan 26, 2021·11 cites·20 claims
- 1889US12189961B2Charge loss mitigation through dynamic programming sequenceMICRON TECHNOLOGY INC·Filed 2022·Granted Jan 7, 2025·1 cites·20 claims
- 1989US11790992B2State dependent VPVD voltages for more uniform threshold voltage distributions in a memory deviceSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Oct 17, 2023·2 cites·13 claims
- 2087US12073905B2Adaptive error avoidance in the memory devicesMICRON TECHNOLOGY INC·Filed 2022·Granted Aug 27, 2024·1 cites·20 claims
- 2187US11398280B1Lockout mode for reverse order read operationSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Jul 26, 2022·2 cites·20 claims
- 2286US12254926B2Memory device with fast write mode to mitigate power lossMICRON TECHNOLOGY INC·Filed 2022·Granted Mar 18, 2025·1 cites·25 claims
- 2385US11328754B2Pre-charge timing control for peak current based on data latch countWESTERN DIGITAL TECH INC·Filed 2020·Granted May 10, 2022·2 cites·17 claims
- 2484US11107901B2Charge storage memory device including ferroelectric layer between control gate electrode layers and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Aug 31, 2021·3 cites·20 claims
- 2582US11758718B2Three dimensional memory device containing truncated channels and method of operating the same with different erase voltages for different bit linesSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Sep 12, 2023·1 cites·20 claims
- 2682US2025291500A1Memory read operation using a voltage pattern based on a read command typeMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 2782US2025370925A1Dynamic erase operation selection using erase policyMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 2881US12333160B2Memory read operation using a voltage pattern based on a read command typeMICRON TECHNOLOGY INC·Filed 2024·Granted Jun 17, 2025·0 cites·20 claims
- 2980US11699494B2Peak and average ICC reduction by tier-based sensing during program verify operations of non-volatile memory structuresSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Jul 11, 2023·1 cites·20 claims
- 3080US11664075B2Sub-block programming mode with multi-tier blockSANDISK TECHNOLOGIES LLC·Filed 2021·Granted May 30, 2023·1 cites·19 claims
- 3180US11226772B1Peak power reduction management in non-volatile storage by delaying start times operationsSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Jan 18, 2022·1 cites·20 claims
- 3279US12417026B2Adaptive sensing time for memory operationsMICRON TECHNOLOGY INC·Filed 2024·Granted Sep 16, 2025·0 cites·20 claims
- 3379US11521686B2Memory apparatus and method of operation using state bit-scan dependent ramp rate for peak current reduction during program operationSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Dec 6, 2022·1 cites·20 claims
- 3479US2025328267A1Dynamic read retry voltage sequences in a memory subsystemMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 3578US12450154B2Selection of erase policy in a memory deviceMICRON TECHNOLOGY INC·Filed 2024·Granted Oct 21, 2025·0 cites·20 claims
- 3678US12417028B2Dynamic erase operation selection using erase policyMICRON TECHNOLOGY INC·Filed 2024·Granted Sep 16, 2025·0 cites·20 claims
- 3778US12373116B2Dynamic read retry voltage sequences in a memory subsystemMICRON TECHNOLOGY INC·Filed 2024·Granted Jul 29, 2025·0 cites·20 claims
- 3876US11211127B1Loop dependent plane skew methodology for program operationSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Dec 28, 2021·1 cites·20 claims
- 3976US2025094063A1Charge loss mitigation through dynamic programming sequenceMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 4075US11189351B2Peak and average current reduction for sub block memory operationSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Nov 30, 2021·1 cites·20 claims
- 4175US2024419543A1Proximity based parity data managementMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 4274US2025044953A1Error detection for programming single level cellsMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 4373US10861571B1Wordline voltage overdrive methods and systemsSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Dec 8, 2020·2 cites·13 claims
- 4472US12079079B2Proximity based parity data managementMICRON TECHNOLOGY INC·Filed 2022·Granted Sep 3, 2024·0 cites·20 claims
- 4572US2025103215A1Adaptive bitline voltage for memory operationsMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 4671US2025182827A1Memory device with fast write mode to mitigate power lossMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 4771US2024420783A1Detecting a memory write reliability risk without using a write verify operationMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 4871US2025037774A13d nand memory with fast corrective readMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 4971US2025029665A1Adaptive programming delay scheme in a memory sub-systemMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 5070US12237003B2Management of dynamic read voltage sequences in a memory subsystemMICRON TECHNOLOGY INC·Filed 2022·Granted Feb 25, 2025·0 cites·20 claims
Showing the top 50 of 137 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →