Inventor · disambiguated record
Yukihiro Nagai
Also filed as: NAGAI YUKIHIRO
54 granted patents·9 pending applications·294 citations·filing 1998–2024
98Inventor score
Files withUNITED MICROELECTRONICS CORP24MITSUBISHI ELECTRIC CORP11FUJIAN JINHUA INTEGRATED CIRCUIT CO LTD5RENESAS TECH CORP4WATANABE HIROSHI4
Top patents by PatentIndex Score
63 records- 0196US10559570B2Semiconductor memory device and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2018·Granted Feb 11, 2020·13 cites·10 claims
- 0295US6445613B1Magnetic random access memoryMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Sep 3, 2002·89 cites·17 claims
- 0393US10083968B1Semiconductor structure, semiconductor structure for memory device and method for forming the sameUNITED MICROELECTRONICS CORP·Filed 2017·Granted Sep 25, 2018·7 cites·11 claims
- 0492US10211086B2Semiconductor structure capable of improving row hammer effect in dynamic random access memory and fabrication method thereofUNITED MICROELECTRONICS CORP·Filed 2018·Granted Feb 19, 2019·7 cites·10 claims
- 0590US10785022B2Network without abuse of a private keyWATANABE HIROSHI·Filed 2017·Granted Sep 22, 2020·9 cites·31 claims
- 0688US12317474B2Method for forming memory device with buried gate in peripheral circuit regionUNITED MICROELECTRONICS CORP·Filed 2024·Granted May 27, 2025·0 cites·4 claims
- 0787US10453518B1Layout of sense amplifierUNITED MICROELECTRONICS CORP·Filed 2018·Granted Oct 22, 2019·5 cites·6 claims
- 0886US10840248B2Resistor for dynamic random access memoryUNITED MICROELECTRONICS CORP·Filed 2018·Granted Nov 17, 2020·4 cites·6 claims
- 0986US10164008B1Semiconductor structure and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2017·Granted Dec 25, 2018·4 cites·14 claims
- 1082US8390062B2Vertical channel transistor array and manufacturing method thereofKOBAYASHI HEIJI·Filed 2010·Granted Mar 5, 2013·6 cites·9 claims
- 1181US10341122B2Electronic appliance and network of the sameWATANABE HIROSHI·Filed 2017·Granted Jul 2, 2019·3 cites·21 claims
- 1280US8786014B2Vertical channel transistor array and manufacturing method thereofNAGAI YUKIHIRO·Filed 2011·Granted Jul 22, 2014·6 cites·9 claims
- 1376US12495545B2Semiconductor memory device and method of fabricating the sameFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2022·Granted Dec 9, 2025·0 cites·20 claims
- 1475US8536008B2Manufacturing method of vertical channel transistor arrayPOWERCHIP TECHNOLOGY CORP·Filed 2013·Granted Sep 17, 2013·3 cites·13 claims
- 1574US9484349B1Static random access memoryPOWERCHIP TECH CORP·Filed 2015·Granted Nov 1, 2016·2 cites·15 claims
- 1670US6104053ASemiconductor device comprising capacitor in logic circuit area and method of fabricating the sameMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Aug 15, 2000·30 cites·6 claims
- 1769US10177923B2Electronic appliance and network of the sameWATANABE HIROSHI·Filed 2017·Granted Jan 8, 2019·1 cites·21 claims
- 1869US9899402B2Flash memory having a U-shaped charge storage layerIMSOLUTION CO LTD·Filed 2017·Granted Feb 20, 2018·2 cites·16 claims
- 1969US6787878B1Semiconductor device having a potential fuse, and method of manufacturing the sameRENESAS TECH CORP·Filed 2000·Granted Sep 7, 2004·17 cites·1 claims
- 2069US2025338490A1Semiconductor device and method of fabricating the sameFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2024·Application pending·0 cites
- 2167US10460824B2Semiconductor apparatus with reduced risks of chip counterfeiting and network invasionWATANABE HIROSHI·Filed 2017·Granted Oct 29, 2019·1 cites·9 claims
- 2267US6175156B1Semiconductor device with improved interconnectionMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Jan 16, 2001·35 cites·7 claims
- 2366US9536890B2Semiconductor transistor and flash memory, and manufacturing method thereofPOWERCHIP TECH CORP·Filed 2015·Granted Jan 3, 2017·1 cites·19 claims
- 2464US2025338489A1Semiconductor DEVICE AND METHOD OF FABRICATING THE SAMEFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2024·Application pending·0 cites
- 2562US11943911B2DRAM with buried gate structureUNITED MICROELECTRONICS CORP·Filed 2018·Granted Mar 26, 2024·0 cites·8 claims
- 2662US10903215B2Layout structure of semiconductor structure for dynamic random access memory device and method for forming the sameUNITED MICROELECTRONICS CORP·Filed 2018·Granted Jan 26, 2021·0 cites·10 claims
- 2761US12426242B2Semiconductor memory device having a bit line contact disposed in the substrateFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2022·Granted Sep 23, 2025·0 cites·12 claims
- 2860US11139304B2Manufacturing method of semiconductor memory deviceUNITED MICROELECTRONICS CORP·Filed 2020·Granted Oct 5, 2021·0 cites·7 claims
- 2960US10388656B2Semiconductor device having thyristor and metal-oxide semiconductor transistorUNITED MICROELECTRONICS CORP·Filed 2018·Granted Aug 20, 2019·0 cites·8 claims
- 3059US10541241B2Semiconductor device having thyristor and metal-oxide semiconductor transistorUNITED MICROELECTRONICS CORP·Filed 2018·Granted Jan 21, 2020·0 cites·11 claims
- 3159US10490627B2Semiconductor structure and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2018·Granted Nov 26, 2019·0 cites·12 claims
- 3258US10529423B2DRAM device with embedded flash memory for redundancy and fabrication method thereofUNITED MICROELECTRONICS CORP·Filed 2019·Granted Jan 7, 2020·0 cites·8 claims
- 3358US8956961B2Semiconductor device and method for making the sameTAKESAKO KAZUAKI·Filed 2012·Granted Feb 17, 2015·2 cites·14 claims
- 3457US8846485B2Method for fabricating bottom electrode of capacitors of DRAMKOBAYASHI HEIJI·Filed 2010·Granted Sep 30, 2014·1 cites·13 claims
- 3556US12213303B2Semiconductor device and method of fabricating the sameFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2022·Granted Jan 28, 2025·0 cites·20 claims
- 3656US10460979B2Semiconductor structure capable of improving row hammer effect in dynamic random access memory and fabrication method thereofUNITED MICROELECTRONICS CORP·Filed 2019·Granted Oct 29, 2019·0 cites·7 claims
- 3756US10373683B2DRAM device with embedded flash memory for redundancy and fabrication method thereofUNITED MICROELECTRONICS CORP·Filed 2018·Granted Aug 6, 2019·0 cites·6 claims
- 3856US10134736B2Method of integrating thyristor and metal-oxide semiconductor transistor on a semiconductor substrateUNITED MICROELECTRONICS CORP·Filed 2017·Granted Nov 20, 2018·0 cites·12 claims
- 3955US6744143B1Semiconductor device having test markRENESAS TECH CORP·Filed 2000·Granted Jun 1, 2004·5 cites·8 claims
- 4054US10608000B1Semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2018·Granted Mar 31, 2020·0 cites·17 claims
- 4154US6337268B1Method of manufacturing contact structureMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Jan 8, 2002·7 cites·9 claims
- 4254US6313005B1Method of manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Nov 6, 2001·7 cites·11 claims
- 4353US9576963B2Manufacturing method of vertical channel transistor arrayPOWERCHIP TECH CORP·Filed 2014·Granted Feb 21, 2017·0 cites·22 claims
- 4451US10475740B2Fuse structure of dynamic random access memoryUNITED MICROELECTRONICS CORP·Filed 2018·Granted Nov 12, 2019·0 cites·20 claims
- 4551US6040615ASemiconductor device with moisture resistant fuse portionMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Mar 21, 2000·17 cites·6 claims
- 4650US6503804B2Method of manufacturing a semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Jan 7, 2003·2 cites·16 claims
- 4747US9922982B1Electric fuse structureUNITED MICROELECTRONICS CORP·Filed 2016·Granted Mar 20, 2018·0 cites·18 claims
- 4846US6673671B1Semiconductor device, and method of manufacturing the sameRENESAS TECH CORP·Filed 2000·Granted Jan 6, 2004·3 cites·3 claims
- 4944US6552379B2Semiconductor device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 2002·Granted Apr 22, 2003·2 cites·10 claims
- 5042US2015255614A1Split gate flash memory and manufacturing method thereofPOWERCHIP TECHNOLOGY CORP·Filed 2014·Application pending·0 cites
Showing the top 50 of 63 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →