Inventor · disambiguated record
Yueh-Ching Pai
Also filed as: Pai Yueh-Ching
34 granted patents·24 pending applications·47 citations·filing 2017–2025
95Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD56PARABELLUM STRATEGIC OPPORTUNITIES FUND LLC1TAIWAN SSEMICONDUCTOR MFG CO LTD1
Top patents by PatentIndex Score
58 records- 0195US11973124B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 30, 2024·2 cites·20 claims
- 0295US10985061B2Methods for forming contact plugs with reduced corrosionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 20, 2021·8 cites·20 claims
- 0395US10535523B1Formation and in-situ etching processes for metal layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 14, 2020·12 cites·20 claims
- 0495US10483165B2Methods for forming contact plugs with reduced corrosionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 19, 2019·8 cites·20 claims
- 0594US10186456B2Methods for forming contact plugs with reduced corrosionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 22, 2019·8 cites·20 claims
- 0688US12446255B2Semiconductor structure with source/drain multi-layer structure and method for forming the samePARABELLUM STRATEGIC OPPORTUNITIES FUND LLC·Filed 2024·Granted Oct 14, 2025·0 cites·16 claims
- 0788US11410889B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 9, 2022·2 cites·20 claims
- 0886US11545363B2Formation and in-situ etching processes for metal layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 3, 2023·1 cites·20 claims
- 0986US10468530B2Semiconductor structure with source/drain multi-layer structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 5, 2019·2 cites·20 claims
- 1085US2024363409A1Methods for forming contact plugs with reduced corrosionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1185US2024363350A1Formation and in-situ etching processes for metal layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1283US11990550B2Semiconductor structure with source/drain multi-layer structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 21, 2024·0 cites·20 claims
- 1383US2025366164A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1482US12170202B2Formation and in-situ etching processes for metal layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 17, 2024·0 cites·20 claims
- 1582US11742404B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 29, 2023·1 cites·20 claims
- 1682US2025366093A1Semiconductor device and methods of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1781US2025366099A1Semiconductor device and methods of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1881US2025299958A1Silicon intermixing layer for blocking diffusionTAIWAN SSEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1980US2025359258A1Semiconductor device having improved gate stacks and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2080US2025357344A1Semiconductor device with backside power rail and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2180US2025359111A1Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2279US12170325B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 17, 2024·0 cites·20 claims
- 2379US2025351477A1Isolation structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2479US2025063759A1Method of forming gate structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2579US2025072027A1Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2678US12490508B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 2, 2025·0 cites·20 claims
- 2778US12484257B2Method of forming gate structures for nanostructuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 25, 2025·1 cites·20 claims
- 2878US2025351424A1Void-free conductive contact formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2977US12394624B2Silicon intermixing layer for blocking diffusionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 19, 2025·0 cites·20 claims
- 3077US2024395611A1Contact metallization processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3177US2025324704A1Semiconductor device and methods of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3276US11527655B2Semiconductor structure with source/drain multi-layer structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 13, 2022·0 cites·20 claims
- 3375US12166126B2Gate structure and semiconductor device having the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 10, 2024·0 cites·20 claims
- 3475US11587791B2Silicon intermixing layer for blocking diffusionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 21, 2023·1 cites·19 claims
- 3573US12068197B2Methods for forming contact plugs with reduced corrosionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 20, 2024·0 cites·20 claims
- 3671US11398482B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 26, 2022·0 cites·20 claims
- 3770US12484291B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 25, 2025·0 cites·20 claims
- 3870US10964590B2Contact metallization processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Mar 30, 2021·1 cites·20 claims
- 3970US2024387747A1Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4069US12191199B2Contact metallization processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 7, 2025·0 cites·20 claims
- 4168US11411112B2Gate structure, method of forming the same, and semiconductor device having the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 9, 2022·0 cites·20 claims
- 4268US10937910B2Semiconductor structure with source/drain multi-layer structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 2, 2021·0 cites·20 claims
- 4368US10872769B2Formation and in-situ etching processes for metal layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 22, 2020·0 cites·20 claims
- 4467US12382693B2Semiconductor device and methods of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 5, 2025·0 cites·20 claims
- 4566US2023387328A1Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4666US2024055476A1Isolation Structures in Semiconductor DevicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4765US12506079B2Semiconductor device with backside power rail and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 23, 2025·0 cites·20 claims
- 4865US2024021687A1Void-Free Conductive Contact FormationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4964US10971602B2High-k metal gate process and deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 6, 2021·0 cites·20 claims
- 5064US2023352546A1Semiconductor device having improved gate stacks and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
Showing the top 50 of 58 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →