Inventor · disambiguated record
Yuan-Ching Peng
Also filed as: PENG YUAN-CHING
58 granted patents·38 pending applications·182 citations·filing 1997–2025
98Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD82TAIWAN SEMICONDUCTOR MFG4UNITED MICROELECTRONICS CORP3CHEN HUNG KAI1IND TECH RES INST1
Top patents by PatentIndex Score
96 records- 0198US11935781B2Integrated circuit structure with backside dielectric layer having air gapTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 19, 2024·5 cites·20 claims
- 0295US11888049B2Dielectric isolation structure for multi-gate transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 30, 2024·2 cites·20 claims
- 0395US11450559B2Integrated circuit structure with backside dielectric layer having air gapTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 20, 2022·3 cites·20 claims
- 0494US11437245B2Germanium hump reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 6, 2022·5 cites·20 claims
- 0594US11417767B2Semiconductor devices including backside vias and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 16, 2022·3 cites·20 claims
- 0693US12426297B2Method and structure for air gap inner spacer in gate-all-around devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 23, 2025·1 cites·20 claims
- 0793US12113113B2Semiconductor device with a core-shell feature and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 8, 2024·2 cites·20 claims
- 0892US12040407B2Semiconductor devices including backside vias and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 16, 2024·1 cites·20 claims
- 0992US8937353B2Dual epitaxial process for a finFET deviceCHEN HUNG-KAI·Filed 2010·Granted Jan 20, 2015·23 cites·18 claims
- 1091US7663237B2Butted contact structureTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Feb 16, 2010·35 cites·15 claims
- 1190US9029912B2Semiconductor substructure having elevated strain material-sidewall interface and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted May 12, 2015·8 cites·20 claims
- 1289US11374128B2Method and structure for air gap inner spacer in gate-all-around devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 28, 2022·2 cites·20 claims
- 1388US8404538B2Device with self aligned stressor and method of making sameLAI KAO-TING·Filed 2009·Granted Mar 26, 2013·17 cites·20 claims
- 1486US11862709B2Inner spacer structure and methods of forming suchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 2, 2024·1 cites·20 claims
- 1584US12369334B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 22, 2025·0 cites·20 claims
- 1684US12308287B2Integrated circuit structure with backside dielectric layer having air gapTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted May 20, 2025·0 cites·20 claims
- 1784US12310057B2Semiconductor devices including backside vias and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted May 20, 2025·0 cites·20 claims
- 1884US2025311265A1Dielectric isolation structure for multi-gate transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1983US12349381B2Dielectric isolation structure for multi-gate transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 1, 2025·0 cites·20 claims
- 2083US2025318156A1Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2182US8372719B2Hard mask removal for semiconductor devicesTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Feb 12, 2013·5 cites·20 claims
- 2281US12255102B2Methods of forming of inner spacer structure using semiconductor material with variable germanium concentrationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 18, 2025·0 cites·20 claims
- 2380US12230712B2Dielectric fin structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 18, 2025·0 cites·20 claims
- 2480US2025254913A1Semiconductor Devices Including Backside Vias and Methods of Forming the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2580US2025351512A1Inner spacers for multi-gate transistors and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2680US2025266293A1Integrated circuit structure with backside dielectric layer having air gapTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2779US2025359215A1Transition between different active regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2879US2025351549A1Gate-all-around devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2978US2025194141A1Dielectric fin structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3077US7349234B2Magnetic memory arrayTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Mar 25, 2008·9 cites·20 claims
- 3176US11735665B2Dielectric fin structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 22, 2023·0 cites·20 claims
- 3276US9224737B2Dual epitaxial process for a finFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Dec 29, 2015·3 cites·20 claims
- 3376US2025311387A1Multi-Gate Transistor Channel Height AdjustmentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3476US2025212498A1Inner spacer structure and methods of forming suchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3575US2025015080A1Fin-type field effect transistor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3675US2025261433A1Gate-all-around devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3775US2025118559A1Mandrel structures and methods of fabricating the same in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3875US2025056851A1Semiconductor device and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3975US2025364259A1Semiconductor fin cut process and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4075US2024379455A1Methods For Forming Source/Drain FeaturesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4174US11532733B1Dielectric isolation structure for multi-gate transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 20, 2022·0 cites·20 claims
- 4274US2025107207A1Semiconductor Device Structure with Uneven Gate ProfileTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4374US2024363635A1Semiconductor device with varying gate dimensions and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4474US2024379673A1Gate isolation features and methods of fabricating the same in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4573US12002845B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 4, 2024·0 cites·20 claims
- 4673US2024395893A1Semiconductor device and forming method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4773US2024371959A1Semiconductor device with a core-shell feature and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4872US2025254942A1Devices with improved operational current and reduced leakage currentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4971US12166096B2Semiconductor device structure with uneven gate profileTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 10, 2024·0 cites·20 claims
- 5071US11404576B2Dielectric fin structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 2, 2022·0 cites·20 claims
Showing the top 50 of 96 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →