Inventor · disambiguated record
Yunsong Qiu
Also filed as: QIU YUNSONG
24 granted patents·8 pending applications·3 citations·filing 2022–2023
89Inventor score
Top patents by PatentIndex Score
32 records- 0196US12310005B2Semiconductor structure and manufacturing method thereofCHANGXIN MEMORY TECH INC·Filed 2022·Granted May 20, 2025·2 cites·20 claims
- 0288US11854862B2Semiconductor structure and manufacturing method thereofCHANGXIN MEMORY TECH INC·Filed 2022·Granted Dec 26, 2023·1 cites·7 claims
- 0363US12408326B2Semiconductor structure and formation method thereof, and memoryCHANGXIN MEMORY TECH INC·Filed 2022·Granted Sep 2, 2025·0 cites·16 claims
- 0462US12513893B2Semiconductor structure and method for fabricating sameCHANGXIN MEMORY TECH INC·Filed 2022·Granted Dec 30, 2025·0 cites·18 claims
- 0562US12402303B2Semiconductor structure having a plurality of bit lines spaced apart from each other in a first direction and extend in a second directionCHANGXIN MEMORY TECH INC·Filed 2022·Granted Aug 26, 2025·0 cites·16 claims
- 0662US12389586B2Semiconductor memory device and method for manufacturing the same including a plurality of mutually perpendicular trenches having the same depthCHANGXIN MEMORY TECH INC·Filed 2022·Granted Aug 12, 2025·0 cites·15 claims
- 0761US12317473B2Semiconductor device having plurality of trenches with different depthCHANGXIN MEMORY TECH INC·Filed 2022·Granted May 27, 2025·0 cites·5 claims
- 0861US12309998B2Semiconductor structure and method for manufacturing semiconductor structureCHANGXIN MEMORY TECH INC·Filed 2022·Granted May 20, 2025·0 cites·20 claims
- 0960US12446212B2Semiconductor structure, method for manufacturing same and memoryCHANGXIN MEMORY TECH INC·Filed 2023·Granted Oct 14, 2025·0 cites·18 claims
- 1059US12426250B2Semiconductor structure, method for manufacturing same and memoryCHANGXIN MEMORY TECH INC·Filed 2022·Granted Sep 23, 2025·0 cites·9 claims
- 1159US12369311B2Semiconductor device and manufacturing method thereofCHANGXIN MEMORY TECH INC·Filed 2022·Granted Jul 22, 2025·0 cites·15 claims
- 1259US12300744B2Semiconductor structure and manufacturing method thereofCHANGXIN MEMORY TECH INC·Filed 2022·Granted May 13, 2025·0 cites·20 claims
- 1358US12426251B2Semiconductor structure, method for manufacturing semiconductor structure, and memoryCHANGXIN MEMORY TECH INC·Filed 2023·Granted Sep 23, 2025·0 cites·17 claims
- 1458US12342534B2Method for fabricating a semiconductor structure with pillar array and semiconductor structureCHANGXIN MEMORY TECH INC·Filed 2022·Granted Jun 24, 2025·0 cites·15 claims
- 1557US12376283B2Semiconductor structure, method for manufacturing sameCHANGXIN MEMORY TECH INC·Filed 2022·Granted Jul 29, 2025·0 cites·10 claims
- 1657US12376289B2Semiconductor structure and method for fabricating sameCHANGXIN MEMORY TECH INC·Filed 2022·Granted Jul 29, 2025·0 cites·15 claims
- 1757US12369297B2Semiconductor structure and manufacturing method thereofCHANGXIN MEMORY TECH INC·Filed 2022·Granted Jul 22, 2025·0 cites·14 claims
- 1857US12225718B2Semiconductor structure and method for forming semiconductor structureCHANGXIN MEMORY TECH INC·Filed 2022·Granted Feb 11, 2025·0 cites·17 claims
- 1957US2024155834A1Semiconductor structure and method for forming sameCHANGXIN MEMORY TECH INC·Filed 2023·Application pending·0 cites
- 2056US12402294B2Semiconductor structure and fabrication method thereofCHANGXIN MEMORY TECH INC·Filed 2022·Granted Aug 26, 2025·0 cites·12 claims
- 2156US12309997B2Semiconductor structure and method for fabricating sameCHANGXIN MEMORY TECH INC·Filed 2022·Granted May 20, 2025·0 cites·12 claims
- 2255US12446207B2Semiconductor device having bottom bit line and narrow channel, and forming method thereofCHANGXIN MEMORY TECH INC·Filed 2022·Granted Oct 14, 2025·0 cites·8 claims
- 2355US2022416049A1Semiconductor structure and fabrication method thereofCHANGXIN MEMORY TECH INC·Filed 2022·Application pending·0 cites
- 2455US2023292488A1Semiconductor structure, array structure, multi-layer stack structure, and method for fabricating array structureCHANGXIN MEMORY TECH INC·Filed 2022·Application pending·0 cites
- 2554US2023016558A1Capacitor stack structure and method for forming sameCHANGXIN MEMORY TECHNOKKOGIES INC·Filed 2022·Application pending·0 cites
- 2653US2023063473A1Semiconductor structure and method for manufacturing sameCHANGXIN MEMORY TECH INC·Filed 2022·Application pending·0 cites
- 2753US2023171951A1Semiconductor structure and manufacturing method thereofCHANGXIN MEMORY TECH INC·Filed 2022·Application pending·0 cites
- 2852US12471314B2Semiconductor structure and fabrication method thereofCHANGXIN MEMORY TECH INC·Filed 2022·Granted Nov 11, 2025·0 cites·7 claims
- 2952US12426256B2Semiconductor structure including a plurality of semicondcutor pillars and bit line isolation trenches and method for forming sameCHANGXIN MEMORY TECH INC·Filed 2022·Granted Sep 23, 2025·0 cites·11 claims
- 3052US12336169B2Semiconductor structure and manufacturing method thereofCHANGXIN MEMORY TECH INC·Filed 2022·Granted Jun 17, 2025·0 cites·11 claims
- 3152US2023413523A1Semiconductor structure and method for forming semiconductor structureCHANGXIN MEMORY TECH INC·Filed 2023·Application pending·0 cites
- 3250US2023064521A1Semiconductor structure and method for forming semiconductor structureCHANGXIN MEMORY TECH INC·Filed 2022·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →