Inventor · disambiguated record
Yun Heub Song
Also filed as: SONG YUN HEUB
35 granted patents·26 pending applications·151 citations·filing 2001–2025
96Inventor score
Files withSAMSUNG ELECTRONICS CO LTD30IUCF HYU20UNIV HANYANG IND UNIV COOP FOUND4SK HYNIX INC2INDUSTRY UNIV COOPERATION FOUNDATION HANYANG UNIV IUCF HYU1
Top patents by PatentIndex Score
61 records- 0191US9099637B2Phase change memory and method of fabricating the phase change memoryINTELLECTUAL DISCOVERY CO LTD·Filed 2014·Granted Aug 4, 2015·9 cites·5 claims
- 0290US9922990B2Three dimensional flash memory using electrode layers and/or interlayer insulation layers having different properties, and preparation method thereforUNIV HANYANG IND UNIV COOP FOUND·Filed 2014·Granted Mar 20, 2018·13 cites·12 claims
- 0388US11882705B2Three-dimensional semiconductor memory device, operating method of the same and electronic system including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jan 23, 2024·1 cites·18 claims
- 0487US6635532B2Method for fabricating NOR type flash memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Oct 21, 2003·36 cites·17 claims
- 0585US7045413B2Method of manufacturing a semiconductor integrated circuit using a selective disposable spacer technique and semiconductor integrated circuit manufactured therebySAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted May 16, 2006·30 cites·27 claims
- 0683US12211940B2Thin film transistor and vertical non-volatile memory device including transition metal-induced polycrystalline metal oxide channel layerSAMSUNG ELECTRONICS CO LTD·Filed 2024·Granted Jan 28, 2025·0 cites·16 claims
- 0781US7436017B2Semiconductor integrated circuit using a selective disposable spacerSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 14, 2008·7 cites·11 claims
- 0878US11688462B2Three-dimensional flash memory with back gateIUCF HYU·Filed 2021·Granted Jun 27, 2023·1 cites·13 claims
- 0978US11456319B2Three-dimensional semiconductor memory device, operating method of the same and electronic system including the sameUNIV HANYANG IND UNIV COOP FOUND·Filed 2021·Granted Sep 27, 2022·1 cites·15 claims
- 1078US9136359B2Three-dimensional flash memory using fringing effect and method for manufacturingSONG YUN HEUB·Filed 2012·Granted Sep 15, 2015·7 cites·20 claims
- 1177US12238928B2Three-dimensional flash memory with reduced wire length and manufacturing method thereforSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Feb 25, 2025·0 cites·17 claims
- 1277US8222684B2Method of manufacturing a semiconductor integrated circuit using a selective disposal spacer technique and semiconductor integrated circuit manufactured therebyLEE SANG-EUN·Filed 2009·Granted Jul 17, 2012·5 cites·15 claims
- 1375US6507522B2Method for erasing memory cells in a nonvolatile memorySAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Jan 14, 2003·22 cites·20 claims
- 1474US10892366B2Thin film transistor and vertical non-volatile memory device including transition metal-induced polycrystalline metal oxide channel layerSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jan 12, 2021·1 cites·18 claims
- 1574US2025151331A1Thin film transistor and vertical non-volatile memory device including transition metal-induced polycrystalline metal oxide channel layerSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 1672US2025169073A1Three-dimensional flash memory with reduced wire length and manufacturing method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 1771US11942553B2Method for fabricating a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Mar 26, 2024·0 cites·14 claims
- 1868US2025024678A1Method for manufacturing three-dimensional flash memory on basis of stacking processIUCF HYU·Filed 2024·Application pending·0 cites
- 1967US11812661B2Phase-change memory device having reversed phase-change characteristics and phase-change memory having highly integrated three-dimensional architecture using sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Nov 7, 2023·0 cites·8 claims
- 2067US6791196B2Semiconductor devices with bonding pads having intermetal dielectric layer of hybrid configuration and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Sep 14, 2004·15 cites·45 claims
- 2166US12374411B2Three-dimensional flash memory for improving integration and operation method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jul 29, 2025·0 cites·8 claims
- 2266US2025176445A1Switching device having bi-directional drive characteristics and method of operating sameSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 2364US7928501B2Semiconductor device and methods of forming and operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Apr 19, 2011·2 cites·14 claims
- 2463US2024422968A1Stack process-based three-dimensional flash memory and manufacturing method thereforIUCF HYU·Filed 2024·Application pending·0 cites
- 2562US12232430B2Switching device having bi-directional drive characteristics and method of operating sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Feb 18, 2025·0 cites·16 claims
- 2662US11988702B2Method and system for inspection of defective MTJ cell in STT-MRAMSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted May 21, 2024·0 cites·21 claims
- 2762US7588979B2Method of manufacturing a semiconductor integrated circuit using a selective disposable spacer technique and semiconductor integrated circuit manufactured therebySAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Sep 15, 2009·1 cites·18 claims
- 2862US2025078942A1Method of operating a three-dimensional semiconductor memory deviceSK HYNIX INC·Filed 2024·Application pending·0 cites
- 2958US11581327B2Three-dimensional flash memory with reduced wire length and manufacturing method thereforSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Feb 14, 2023·0 cites·5 claims
- 3055US11980109B2Selection element-integrated phase-change memory and method for producing sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted May 7, 2024·0 cites·14 claims
- 3155US2024431103A13d flash memory and manufacturing method thereofIUCF HYU·Filed 2022·Application pending·0 cites
- 3254US11616081B2Three-dimensional semiconductor memory device including ferroelectric thin film and manufacturing method of the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Mar 28, 2023·0 cites·9 claims
- 3353US2024404602A1Operation method for three-dimensional flash memory including ferroelectric-based data storage pattern and back gateIUCF HYU·Filed 2024·Application pending·0 cites
- 3453US2024049467A1Three dimensional semiconductor device having a back-gate electrodeSK HYNIX INC·Filed 2023·Application pending·0 cites
- 3553US2024312520A1Three-dimensional flash memory having structure with extended memory cell areaIUCF HYU·Filed 2021·Application pending·0 cites
- 3652US12475951B2Method for operating three-dimensional flash memoryIUCF HYU·Filed 2022·Granted Nov 18, 2025·0 cites·11 claims
- 3752US11955177B2Three-dimensional flash memory including middle metallization layer and manufacturing method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Apr 9, 2024·0 cites·20 claims
- 3852US2024260272A1Three-dimensional flash memory comprising connection part, and manufacturing method thereforIUCF HYU·Filed 2022·Application pending·0 cites
- 3951US12067478B2PCM-based neural network deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Aug 20, 2024·0 cites·12 claims
- 4051US2024164104A1Three-dimensional flash memory having improved stack connection part and method for manufacturing sameIUCF HYU·Filed 2021·Application pending·0 cites
- 4150US12082417B23-dimensional flash memory having air gap, and method for manufacturing sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Sep 3, 2024·0 cites·2 claims
- 4250US11544538B2Pulse driving apparatus for minimising asymmetry with respect to weight in synapse element, and method thereforSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jan 3, 2023·0 cites·15 claims
- 4350US10014348B2Artificial neuron semiconductor element having three-dimensional structure and artificial neuron semiconductor system using sameUNIV HANYANG IND UNIV COOP FOUND·Filed 2017·Granted Jul 3, 2018·0 cites·14 claims
- 4450US2022245437A1Three-dimensional neuromorphic device having multiple synapses per neuronUNIV HANYANG IND UNIV COOP FOUND·Filed 2020·Application pending·0 cites
- 4549US2024096414A1Three-dimensional flash memory including floating devices, and manufacturing method thereforIUCF HYU·Filed 2021·Application pending·0 cites
- 4649US2023157021A13d flush memory having improved structureIUCF HYU·Filed 2021·Application pending·0 cites
- 4748US11037954B2Three dimensional flash memory element with middle source-drain line and manufacturing method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jun 15, 2021·0 cites·21 claims
- 4848US8354708B2Methods of forming and operating semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2011·Granted Jan 15, 2013·0 cites·12 claims
- 4947US11195996B2Phase-change memory device having reversed phase-change characteristics and phase-change memory having highly integrated three-dimensional architecture using sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Dec 7, 2021·0 cites·14 claims
- 5047US2023301110A1Three dimensional flash memory for integrating and manufacturing method thereofIUCF HYU INDUSTRY UNVERSITY COOPERATION FOUNDATION HANYANG UNIV·Filed 2021·Application pending·0 cites
Showing the top 50 of 61 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →