Inventor · disambiguated record
Yujin Terasawa
Also filed as: TERASAWA YUJIN
8 granted patents·2 pending applications·40 citations·filing 2018–2023
81Inventor score
Top patents by PatentIndex Score
10 records- 0195US10608010B2Three-dimensional memory device containing replacement contact via structures and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Mar 31, 2020·28 cites·11 claims
- 0294US11532570B2Three-dimensional memory device containing bridges for enhanced structural support and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Dec 20, 2022·3 cites·16 claims
- 0393US11778818B2Three-dimensional memory device with punch-through-resistant word lines and methods for forming the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Oct 3, 2023·3 cites·7 claims
- 0488US12176203B2Methods and apparatuses for forming semiconductor devices containing tungsten layers using a tungsten growth suppressantSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Dec 24, 2024·1 cites·4 claims
- 0587US10916504B2Three-dimensional memory device including electrically conductive layers with molybdenum-containing linersSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Feb 9, 2021·5 cites·19 claims
- 0660US12414296B2Three dimensional memory device and method of making thereof by forming channel and memory film after word line replacementSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Sep 9, 2025·0 cites·10 claims
- 0757US12217965B2Methods and apparatuses for forming semiconductor devices containing tungsten layers using a tungsten growth suppressantSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Feb 4, 2025·0 cites·12 claims
- 0857US2025048641A1Memory device including hafnium or zirconium oxide containing blocking dielectric and tungsten nitride barrier and methods of forming the sameWESTERN DIGITAL TECH INC·Filed 2023·Application pending·0 cites
- 0953US12185540B2Three dimensional memory device and method of making thereof by forming channel and memory film after word line replacementSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Dec 31, 2024·0 cites·2 claims
- 1051US2023223267A1Methods and apparatuses for forming semiconductor devices containing tungsten layers using a tungsten growth suppressantSANDISK TECHNOLOGIES LLC·Filed 2022·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →