Inventor · disambiguated record
Yuichiro Tokuda
Also filed as: Tokuda yuichiro
6 granted patents·1 pending application·2 citations·filing 2016–2023
68Inventor score
Top patents by PatentIndex Score
7 records- 0192US12071709B2Methods for manufacturing silicon carbide single crystal ingot and silicon carbide single crystal waferDENSO CORP·Filed 2023·Granted Aug 27, 2024·2 cites·2 claims
- 0266US11846040B2Silicon carbide single crystalDENSO CORP·Filed 2020·Granted Dec 19, 2023·0 cites·12 claims
- 0362US11542631B2Method for producing p-type 4H-SiC single crystalAIST·Filed 2020·Granted Jan 3, 2023·0 cites·20 claims
- 0455US12252808B2Silicon carbide single crystal wafer, and methods for manufacturing silicon carbide single crystal ingot and the silicon carbide single crystal waferDENSO CORP·Filed 2020·Granted Mar 18, 2025·0 cites·9 claims
- 0553US12331423B2Reaction chamber for a deposition reactor with interspace and lower closing element and reactorLPE SPA·Filed 2020·Granted Jun 17, 2025·0 cites·24 claims
- 0650US12371779B2Reaction chamber comprising a rotating element for the deposition of a semiconductor materialLPE SPA·Filed 2020·Granted Jul 29, 2025·0 cites·13 claims
- 0744US2018274125A1P-type 4h-sic single crystal and method for producing p-type 4h-sic single crystalAIST·Filed 2016·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →