Inventor · disambiguated record
Yu-Hao Tsai
Also filed as: TSAI YU-HAO
12 granted patents·9 pending applications·3 citations·filing 2020–2024
80Inventor score
Files withTOKYO ELECTRON LTD21
Top patents by PatentIndex Score
21 records- 0186US11024508B2Independent control of etching and passivation gas components for highly selective silicon oxide/silicon nitride etchingTOKYO ELECTRON LTD·Filed 2020·Granted Jun 1, 2021·2 cites·19 claims
- 0279US11837471B2Methods of patterning small featuresTOKYO ELECTRON LTD·Filed 2020·Granted Dec 5, 2023·1 cites·18 claims
- 0363US12400863B2Method for etching for semiconductor fabricationTOKYO ELECTRON LTD·Filed 2022·Granted Aug 26, 2025·0 cites·20 claims
- 0460US12308212B2In-situ adsorbate formation for plasma etch processTOKYO ELECTRON LTD·Filed 2022·Granted May 20, 2025·0 cites·16 claims
- 0560US2025308895A1Selective in-situ carbon-based mask protectionTOKYO ELECTRON LTD·Filed 2024·Application pending·0 cites
- 0659US12287578B2Cyclic method for reactive development of photoresistsTOKYO ELECTRON LTD·Filed 2022·Granted Apr 29, 2025·0 cites·20 claims
- 0759US2025300007A1Plasma assisted metal oxide reductionTOKYO ELECTRON LTD·Filed 2024·Application pending·0 cites
- 0857US2025188608A1Selective non-plasma deposition of mask protection materialTOKYO ELECTRON LTD·Filed 2023·Application pending·0 cites
- 0956US2025046614A1SELECTIVE ATOMIC LAYER ETCH OF Si-BASED MATERIALSTOKYO ELECTRON LTD·Filed 2023·Application pending·0 cites
- 1055US12424447B2Method to selectively etch silicon nitride to silicon oxide using water crystallizationTOKYO ELECTRON LTD·Filed 2022·Granted Sep 23, 2025·0 cites·19 claims
- 1155US12272558B2Selective and isotropic etch of silicon over silicon-germanium alloys and dielectrics; via new chemistry and surface modificationTOKYO ELECTRON LTD·Filed 2022·Granted Apr 8, 2025·0 cites·20 claims
- 1255US11804380B2High-throughput dry etching of films containing silicon-oxygen components or silicon-nitrogen components by proton-mediated catalyst formationTOKYO ELECTRON LTD·Filed 2021·Granted Oct 31, 2023·0 cites·17 claims
- 1352US2024162043A1Sidewall Inorganic Passivation for Dielectric Etching Via Surface ModificationTOKYO ELECTRON LTD·Filed 2022·Application pending·0 cites
- 1452US2024071746A1Plasma surface treatment for wafer bonding methodsTOKYO ELECTRON LTD·Filed 2022·Application pending·0 cites
- 1551US11189499B2Atomic layer etch (ALE) of tungsten or other metal layersTOKYO ELECTRON LTD·Filed 2020·Granted Nov 30, 2021·0 cites·23 claims
- 1651US2024112888A1In-Situ Adsorbate Formation for Dielectric EtchTOKYO ELECTRON LTD·Filed 2022·Application pending·0 cites
- 1750US11152217B2Highly selective silicon oxide/silicon nitride etching by selective boron nitride or aluminum nitride depositionTOKYO ELECTRON LTD·Filed 2020·Granted Oct 19, 2021·0 cites·20 claims
- 1848US11232954B2Sidewall protection layer formation for substrate processingTOKYO ELECTRON LTD·Filed 2020·Granted Jan 25, 2022·0 cites·22 claims
- 1948US11158517B2Selective plasma etching of silicon oxide relative to silicon nitride by gas pulsingTOKYO ELECTRON LTD·Filed 2020·Granted Oct 26, 2021·0 cites·19 claims
- 2046US2023081862A1Focus Ring RegenerationTOKYO ELECTRON LTD·Filed 2021·Application pending·0 cites
- 2145US2021233775A1High-throughput dry etching of silicon oxide and silicon nitride materials by in-situ autocatalyst formationTOKYO ELECTRON LTD·Filed 2021·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →