Inventor · disambiguated record
Yu-Cheng Tung
Also filed as: TUNG YU- CHENG
207 granted patents·44 pending applications·663 citations·filing 2002–2025
99Inventor score
Files withUNITED MICROELECTRONICS CORP164FUJIAN JINHUA INTEGRATED CIRCUIT CO LTD77TUNG YU-CHENG4CHUNGHWA PICTURE TUBES LTD2WINBOND ELECTRONICS CORP2
Top patents by PatentIndex Score
251 records- 0199US9899267B1Semiconductor device and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2016·Granted Feb 20, 2018·81 cites·12 claims
- 0298US9496361B1Selectively deposited metal gates and method of manufacturing thereofUNITED MICROELECTRONICS CORP·Filed 2015·Granted Nov 15, 2016·25 cites·20 claims
- 0398US9406521B1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2015·Granted Aug 2, 2016·21 cites·10 claims
- 0497US9722093B1Oxide semiconductor transistor and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2016·Granted Aug 1, 2017·47 cites·13 claims
- 0596US9679819B1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2016·Granted Jun 13, 2017·14 cites·19 claims
- 0696US9660022B2Semiconductive device with a single diffusion break and method of fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2015·Granted May 23, 2017·17 cites·13 claims
- 0796US9530851B1Semiconductor device and manufacturing methods thereofUNITED MICROELECTRONICS CORP·Filed 2015·Granted Dec 27, 2016·15 cites·20 claims
- 0896US9397008B1Semiconductor device and manufacturing method of conductive structure in semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2015·Granted Jul 19, 2016·14 cites·15 claims
- 0995US10504791B2Semiconductor device and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2018·Granted Dec 10, 2019·9 cites·20 claims
- 1095US9859283B1Semiconductor memory structureUNITED MICROELECTRONICS CORP·Filed 2017·Granted Jan 2, 2018·10 cites·18 claims
- 1195US9748139B1Method of fabricating dual damascene structureUNITED MICROELECTRONICS CORP·Filed 2016·Granted Aug 29, 2017·14 cites·8 claims
- 1295US9570339B2Semiconductor structure and process thereofUNITED MICROELECTRONICS CORP·Filed 2015·Granted Feb 14, 2017·11 cites·6 claims
- 1395US9543211B1Semiconductor structure and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2015·Granted Jan 10, 2017·15 cites·17 claims
- 1495US8664060B2Semiconductor structure and method of fabricating the sameLIU AN-CHI·Filed 2012·Granted Mar 4, 2014·22 cites·20 claims
- 1594US11825644B2Semiconductor memory deviceFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2021·Granted Nov 21, 2023·2 cites·12 claims
- 1694US11600622B2Method of forming semiconductor memory device comprises a bit line having a plurality of pins extending along a direction being perpendicular to a substrateFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2021·Granted Mar 7, 2023·2 cites·18 claims
- 1794US10355019B1Semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2018·Granted Jul 16, 2019·11 cites·15 claims
- 1894US10354876B1Semiconductor device and method of forming the sameUNITED MICROELECTRONICS CORP·Filed 2018·Granted Jul 16, 2019·10 cites·20 claims
- 1994US10205005B1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2017·Granted Feb 12, 2019·8 cites·9 claims
- 2094US9607892B2Method for forming a two-layered hard mask on top of a gate structureUNITED MICROELECTRONICS CORP·Filed 2016·Granted Mar 28, 2017·9 cites·7 claims
- 2194US9378973B1Method of using sidewall image transfer process to form fin-shaped structuresUNITED MICROELECTRONICS CORP·Filed 2015·Granted Jun 28, 2016·10 cites·11 claims
- 2293US11665885B2Semiconductor memory deviceFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2021·Granted May 30, 2023·2 cites·11 claims
- 2393US11380754B2Manufacturing method of semiconductor device and semiconductor deviceFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2021·Granted Jul 5, 2022·2 cites·14 claims
- 2493US10056463B2Transistor and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2017·Granted Aug 21, 2018·13 cites·18 claims
- 2593US10043807B1Semiconductor device and method of forming the sameUNITED MICROELECTRONICS CORP·Filed 2017·Granted Aug 7, 2018·9 cites·19 claims
- 2693US9837417B1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2016·Granted Dec 5, 2017·6 cites·20 claims
- 2793US9490341B2Semiconductor device having metal gate and method for manufacturing semiconductor device having metal gateUNITED MICROELECTRONICS CORP·Filed 2015·Granted Nov 8, 2016·8 cites·13 claims
- 2893US8546202B2Manufacturing method for semiconductor structuresTUNG YU-CHENG·Filed 2011·Granted Oct 1, 2013·21 cites·15 claims
- 2992US11557645B2Semiconductor memory device and method of forming the sameFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2021·Granted Jan 17, 2023·3 cites·20 claims
- 3092US10332884B2FinFET semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2017·Granted Jun 25, 2019·13 cites·5 claims
- 3192US10164039B2Semiconductor device having metal gateUNITED MICROELECTRONICS CORP·Filed 2016·Granted Dec 25, 2018·7 cites·7 claims
- 3291US11818880B2Semiconductor structure including capacitor and method for forming the sameFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2022·Granted Nov 14, 2023·1 cites·20 claims
- 3391US10600790B2Manufacturing method of semiconductor memory deviceUNITED MICROELECTRONICS CORP·Filed 2018·Granted Mar 24, 2020·6 cites·19 claims
- 3491US10332877B2Semiconductor device and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2016·Granted Jun 25, 2019·7 cites·13 claims
- 3591US10153353B1Semiconductor structureUNITED MICROELECTRONICS CORP·Filed 2017·Granted Dec 11, 2018·6 cites·20 claims
- 3691US10062613B1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2017·Granted Aug 28, 2018·6 cites·10 claims
- 3791US9882054B2FinFET with merged, epitaxial source/drain regionsUNITED MICROELECTRONICS CORP·Filed 2015·Granted Jan 30, 2018·6 cites·11 claims
- 3891US9576859B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2016·Granted Feb 21, 2017·6 cites·18 claims
- 3990US10580864B2Method of forming semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2018·Granted Mar 3, 2020·5 cites·15 claims
- 4090US10068969B2Nanowire transistor and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2016·Granted Sep 4, 2018·5 cites·6 claims
- 4190US9385236B1Fin shaped semiconductor device structures having tipped end shape and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2015·Granted Jul 5, 2016·9 cites·17 claims
- 4289US10381439B2Nanowire transistor having two spacers between gate structure and source/drain structureUNITED MICROELECTRONICS CORP·Filed 2018·Granted Aug 13, 2019·4 cites·19 claims
- 4389US10170362B2Semiconductor memory device with bit line contact structure and method of forming the sameUNITED MICROELECTRONICS CORP·Filed 2017·Granted Jan 1, 2019·5 cites·7 claims
- 4489US9780193B2Device with reinforced metal gate spacer and method of fabricatingUNITED MICROELECTRONICS CORP·Filed 2015·Granted Oct 3, 2017·6 cites·6 claims
- 4588US9985035B1Semiconductor memory structureUNITED MICROELECTRONICS CORP·Filed 2017·Granted May 29, 2018·4 cites·19 claims
- 4688US9054187B2Semiconductor structureUNITED MICROELECTRONICS CORP·Filed 2013·Granted Jun 9, 2015·8 cites·12 claims
- 4787US11784184B2Semiconductor memory deviceFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2021·Granted Oct 10, 2023·1 cites·20 claims
- 4887US10312353B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2018·Granted Jun 4, 2019·3 cites·9 claims
- 4987US9496182B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2014·Granted Nov 15, 2016·7 cites·14 claims
- 5087US9466564B1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2015·Granted Oct 11, 2016·4 cites·11 claims
Showing the top 50 of 251 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →