Inventor · disambiguated record

Yu-Ping Wang

Also filed as: WANG YU · WANG YU-PING

119 granted patents·56 pending applications·600 citations·filing 2010–2025

99Inventor score

Technology areasH10N H10W H10D H10P G06F

Files withUNITED MICROELECTRONICS CORP136 BEIJING DIDI INFINITY TECHNOLOGY & DEV CO LTD13 WALMART APOLLO LLC4 NAT CHUNG SHAN INST SCIENCE & TECH3 NAT INST CHUNG SHAN SCIENCE & TECHNOLOGY3

Top patents by PatentIndex Score

175 records

0199US8377779B1Methods of manufacturing semiconductor devices and transistorsTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Feb 19, 2013·437 cites·20 claims
0298US11706996B2Magnetoresistive random access memoryUNITED MICROELECTRONICS CORP·Filed 2021·Granted Jul 18, 2023·3 cites·10 claims
0396US12029044B2Semiconductor structure and method for forming the sameUNITED MICROELECTRONICS CORP·Filed 2023·Granted Jul 2, 2024·1 cites·11 claims
0496US12029139B2Magnetoresistive random access memoryUNITED MICROELECTRONICS CORP·Filed 2023·Granted Jul 2, 2024·1 cites·8 claims
0596US10529920B1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2018·Granted Jan 7, 2020·18 cites·13 claims
0695US11877520B2Magnetoresistive random access memory having a ring of magnetic tunneling junction region surrounding an array regionUNITED MICROELECTRONICS CORP·Filed 2023·Granted Jan 16, 2024·1 cites·17 claims
0795US11849648B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2021·Granted Dec 19, 2023·2 cites·6 claims
0895US11063206B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2019·Granted Jul 13, 2021·6 cites·6 claims
0995US11055463B1Systems and methods for gate array with partial common inputsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 6, 2021·6 cites·20 claims
1095US8679925B2Methods of manufacturing semiconductor devices and transistorsTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Mar 25, 2014·19 cites·20 claims
1193US10971676B2Magnetoresistive random access memory having a ring of magnetic tunneling junction region surrounding an array regionUNITED MICROELECTRONICS CORP·Filed 2019·Granted Apr 6, 2021·4 cites·18 claims
1293US10276633B1Semiconductor device and method of forming the sameUNITED MICROELECTRONICS CORP·Filed 2018·Granted Apr 30, 2019·8 cites·8 claims
1393US9379242B1Method of fabricating fin field effect transistorUNITED MICROELECTRONICS CORP·Filed 2015·Granted Jun 28, 2016·13 cites·16 claims
1492US11950513B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2022·Granted Apr 2, 2024·1 cites·10 claims
1592US10727397B1Magnetoresistive random access memory cellUNITED MICROELECTRONICS CORP·Filed 2019·Granted Jul 28, 2020·5 cites·16 claims
1692US2025366375A1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2025·Application pending·0 cites
1791US11355700B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2020·Granted Jun 7, 2022·2 cites·6 claims
1891US10374006B1Magnetic random access memory cell structureUNITED MICROELECTRONICS CORP·Filed 2018·Granted Aug 6, 2019·8 cites·17 claims
1991US2024423095A1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2024·Application pending·0 cites
2091US2025344611A1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2025·Application pending·0 cites
2190US12290005B2Magnetoresistive random access memoryUNITED MICROELECTRONICS CORP·Filed 2024·Granted Apr 29, 2025·0 cites·8 claims
2290US12262544B2Magnetoresistive random access memory and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2024·Granted Mar 25, 2025·0 cites·9 claims
2390US12256556B2Magnetoresistive random access memory and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2024·Granted Mar 18, 2025·0 cites·7 claims
2490US11139428B2Magnetoresistive random access memoryUNITED MICROELECTRONICS CORP·Filed 2019·Granted Oct 5, 2021·2 cites·8 claims
2590US9524967B1Semiconductor device and method of forming the sameUNITED MICROELECTRONICS CORP·Filed 2016·Granted Dec 20, 2016·8 cites·18 claims
2689US12284812B2Semiconductor structure and method for forming the sameUNITED MICROELECTRONICS CORP·Filed 2024·Granted Apr 22, 2025·0 cites·9 claims
2789US12262647B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2024·Granted Mar 25, 2025·0 cites·5 claims
2889US10930839B2Magnetoresistive random access memory having a ring of magnetic tunneling junction region surrounding an array regionUNITED MICROELECTRONICS CORP·Filed 2020·Granted Feb 23, 2021·2 cites·20 claims
2989US2025035718A1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2024·Application pending·0 cites
3088US12369499B2Magnetoresistive random access memory and method of manufacturing the sameUNITED MICROELECTRONICS CORP·Filed 2024·Granted Jul 22, 2025·0 cites·4 claims
3188US12310249B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2023·Granted May 20, 2025·0 cites·5 claims
3288US11005030B2Magnetoresistive random access memoryUNITED MICROELECTRONICS CORP·Filed 2019·Granted May 11, 2021·2 cites·9 claims
3388US10930704B2Magnetic memory cellUNITED MICROELECTRONICS CORP·Filed 2020·Granted Feb 23, 2021·2 cites·9 claims
3488US10608045B2Method of forming semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2019·Granted Mar 31, 2020·2 cites·7 claims
3587US12439832B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2024·Granted Oct 7, 2025·0 cites·5 claims
3687US12402540B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2023·Granted Aug 26, 2025·0 cites·5 claims
3787US12310259B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2024·Granted May 20, 2025·0 cites·7 claims
3887US12306274B2Magnetoresistive random access memory and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2023·Granted May 20, 2025·0 cites·8 claims
3987US12268098B2Magnetoresistive random access memory having a ring of magnetic tunneling junction region surrounding an array regionUNITED MICROELECTRONICS CORP·Filed 2023·Granted Apr 1, 2025·0 cites·16 claims
4087US12146927B2Magnetoresistive random access memory and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2023·Granted Nov 19, 2024·0 cites·8 claims
4187US12108680B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2023·Granted Oct 1, 2024·0 cites·11 claims
4287US10622407B1Magnetic memory cell and fabrication method thereofUNITED MICROELECTRONICS CORP·Filed 2019·Granted Apr 14, 2020·6 cites·20 claims
4387US2025113742A1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2024·Application pending·0 cites
4486US11637233B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2020·Granted Apr 25, 2023·1 cites·5 claims
4586US11508904B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2021·Granted Nov 22, 2022·1 cites·9 claims
4686US11387408B2Magnetoresistive random access memory and method of manufacturing the sameUNITED MICROELECTRONICS CORP·Filed 2020·Granted Jul 12, 2022·1 cites·6 claims
4786US10818108B2Methods and systems for vehicle managementBEIJING DIDI INFINITY TECHNOLOGY & DEV CO LTD·Filed 2020·Granted Oct 27, 2020·2 cites·18 claims
4886US2025048936A1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2024·Application pending·0 cites
4985US12408559B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2024·Granted Sep 2, 2025·0 cites·9 claims
5085US12207564B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2023·Granted Jan 21, 2025·0 cites·11 claims

Showing the top 50 of 175 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →