Inventor · disambiguated record
Yu-Ren Wang
Also filed as: WANG YU · WANG YU-REN
112 granted patents·26 pending applications·611 citations·filing 2003–2025
99Inventor score
Top patents by PatentIndex Score
138 records- 0197US9847247B2Method for filling gaps of semiconductor device and semiconductor device formed by the sameUNITED MICROELECTRONICS CORP·Filed 2017·Granted Dec 19, 2017·284 cites·13 claims
- 0296US11508818B2Semiconductor device with strain relaxed layerUNITED MICROELECTRONICS CORP·Filed 2021·Granted Nov 22, 2022·2 cites·6 claims
- 0396US10475709B1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2018·Granted Nov 12, 2019·16 cites·10 claims
- 0496US9685533B1Transistor with SiCN/SiOCN mulitlayer spacerUNITED MICROELECTRONICS CORP·Filed 2016·Granted Jun 20, 2017·17 cites·6 claims
- 0596US9431483B1Nanowire and method of fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2015·Granted Aug 30, 2016·16 cites·11 claims
- 0695US9793174B1FinFET device on silicon-on-insulator and method of forming the sameUNITED MICROELECTRONICS CORP·Filed 2016·Granted Oct 17, 2017·22 cites·17 claims
- 0795US9716165B1Field-effect transistor and method of making the sameUNITED MICROELECTRONICS CORP·Filed 2016·Granted Jul 25, 2017·15 cites·13 claims
- 0892US11527448B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2020·Granted Dec 13, 2022·2 cites·1 claims
- 0991US9419089B1Semiconductor structure and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2015·Granted Aug 16, 2016·7 cites·9 claims
- 1090US8183118B2Method for fabricating MOS transistorLU TSUO-WEN·Filed 2010·Granted May 22, 2012·12 cites·20 claims
- 1190US7312139B2Method of fabricating nitrogen-containing gate dielectric layer and semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2005·Granted Dec 25, 2007·18 cites·30 claims
- 1289US10910277B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2020·Granted Feb 2, 2021·2 cites·8 claims
- 1389US10332981B1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2018·Granted Jun 25, 2019·5 cites·7 claims
- 1489US9646889B1Method of removing a hard mask layer on a gate structure while forming a protective layer on the surface of a substrateUNITED MICROELECTRONICS CORP·Filed 2016·Granted May 9, 2017·5 cites·11 claims
- 1589US9356125B1Manufacturing method of semiconductor structureUNITED MICROELECTRONICS CORP·Filed 2015·Granted May 31, 2016·7 cites·15 claims
- 1689US9130014B2Method for fabricating shallow trench isolation structureUNITED MICROELECTRONICS CORP·Filed 2013·Granted Sep 8, 2015·8 cites·7 claims
- 1788US9685319B2Method for filling gaps of semiconductor device and semiconductor device formed by the sameUNITED MICROELECTRONICS CORP·Filed 2015·Granted Jun 20, 2017·5 cites·7 claims
- 1888US8536038B2Manufacturing method for metal gate using ion implantationWang shao-wei·Filed 2011·Granted Sep 17, 2013·10 cites·35 claims
- 1988US8426277B2Semiconductor processLIN CHIEN-LIANG·Filed 2011·Granted Apr 23, 2013·9 cites·22 claims
- 2087US7037773B2Method of manufacturing metal-oxide-semiconductor transistorUNITED MICROELECTRONICS CORP·Filed 2004·Granted May 2, 2006·44 cites·20 claims
- 2187US2025014948A1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2024·Application pending·0 cites
- 2285US12369371B2High electron mobility transistor and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2022·Granted Jul 22, 2025·1 cites·6 claims
- 2385US10312084B2Semiconductor device and fabrication method thereofUNITED MICROELECTRONICS CORP·Filed 2017·Granted Jun 4, 2019·3 cites·8 claims
- 2484US12119272B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2023·Granted Oct 15, 2024·0 cites·10 claims
- 2584US12046640B2Semiconductor device with strain relaxed layerUNITED MICROELECTRONICS CORP·Filed 2023·Granted Jul 23, 2024·0 cites·7 claims
- 2684US11955519B2Semiconductor device with strain relaxed layerUNITED MICROELECTRONICS CORP·Filed 2023·Granted Apr 9, 2024·0 cites·7 claims
- 2784US10079143B2Method of forming semiconductor device having wick structureUNITED MICROELECTRONICS CORP·Filed 2017·Granted Sep 18, 2018·3 cites·10 claims
- 2884US9449829B1Semiconductor processUNITED MICROELECTRONICS CORP·Filed 2015·Granted Sep 20, 2016·4 cites·20 claims
- 2983US11049971B2Semiconductor device having epitaxial structureUNITED MICROELECTRONICS CORP·Filed 2018·Granted Jun 29, 2021·2 cites·13 claims
- 3082US12317547B2Method of fabricating semiconductor device having epitaxial structureUNITED MICROELECTRONICS CORP·Filed 2023·Granted May 27, 2025·0 cites·12 claims
- 3182US2025254931A1Method of fabricating semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2025·Application pending·0 cites
- 3282US2025261412A1Method of fabricating semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2025·Application pending·0 cites
- 3381US11791219B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2022·Granted Oct 17, 2023·0 cites·14 claims
- 3481US9960084B1Method for forming semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2016·Granted May 1, 2018·3 cites·11 claims
- 3580US11664426B2Semiconductor device with strain relaxed layerUNITED MICROELECTRONICS CORP·Filed 2022·Granted May 30, 2023·0 cites·6 claims
- 3680US10446667B2Method for fabricating semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2019·Granted Oct 15, 2019·2 cites·11 claims
- 3779US12046639B2Semiconductor device with strain relaxed layerUNITED MICROELECTRONICS CORP·Filed 2022·Granted Jul 23, 2024·0 cites·9 claims
- 3879US9882022B2Method for manufacturing transistor with SiCN/SiOCN multilayer spacerUNITED MICROELECTRONICS CORP·Filed 2017·Granted Jan 30, 2018·2 cites·4 claims
- 3978US10796943B2Manufacturing method of semiconductor structureUNITED MICROELECTRONICS CORP·Filed 2018·Granted Oct 6, 2020·2 cites·12 claims
- 4078US9728397B1Semiconductor device having the insulating layers cover a bottom portion of the fin shaped structureUNITED MICROELECTRONICS CORP·Filed 2016·Granted Aug 8, 2017·2 cites·7 claims
- 4177US8501636B1Method for fabricating silicon dioxide layerWang shao-wei·Filed 2012·Granted Aug 6, 2013·5 cites·16 claims
- 4276US9793105B1Fabricating method of fin field effect transistor (FinFET)UNITED MICROELECTRONICS CORP·Filed 2016·Granted Oct 17, 2017·2 cites·20 claims
- 4376US9613808B1Method of forming multilayer hard mask with treatment for removing impurities and forming dangling bondsUNITED MICROELECTRONICS CORP·Filed 2016·Granted Apr 4, 2017·2 cites·7 claims
- 4476US9117878B2Method for manufacturing shallow trench isolationUNITED MICROELECTRONICS CORP·Filed 2012·Granted Aug 25, 2015·3 cites·19 claims
- 4575US11876122B2Method for forming semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2022·Granted Jan 16, 2024·0 cites·6 claims
- 4675US10366991B1Semiconductor device and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2018·Granted Jul 30, 2019·2 cites·22 claims
- 4775US9748111B2Method of fabricating semiconductor structure using planarization process and cleaning processUNITED MICROELECTRONICS CORP·Filed 2016·Granted Aug 29, 2017·2 cites·18 claims
- 4875US9543408B1Method of forming patterned hard mask layerUNITED MICROELECTRONICS CORP·Filed 2015·Granted Jan 10, 2017·2 cites·12 claims
- 4975US9330902B1Method for forming HfOx film based on atomic layer deposition (ALD) processUNITED MICROELECTRONICS CORP·Filed 2015·Granted May 3, 2016·2 cites·13 claims
- 5075US8802579B2Semiconductor structure and fabrication method thereofLIN CHIEN-LIANG·Filed 2011·Granted Aug 12, 2014·3 cites·17 claims
Showing the top 50 of 138 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →