Inventor · disambiguated record
Yukimune Watanabe
Also filed as: WATANABE YUKIMUNE
14 granted patents·4 pending applications·27 citations·filing 2006–2019
87Inventor score
Top patents by PatentIndex Score
18 records- 0181US7645655B2Semiconductor device and manufacturing method of the semiconductor deviceSEIKO EPSON CORP·Filed 2006·Granted Jan 12, 2010·7 cites·6 claims
- 0279US7713884B2Method of manufacturing semiconductor device that includes forming metal oxide film on semiconductor waferRENESAS TECH CORP·Filed 2008·Granted May 11, 2010·6 cites·20 claims
- 0378US7968396B2Semiconductor device and manufacturing method of the semiconductor deviceSEIKO EPSON CORP·Filed 2009·Granted Jun 28, 2011·5 cites·2 claims
- 0468US9064802B2Method of manufacturing semiconductor device and semiconductor device having oxide film crystallized by a thermal treatmentWATANABE YUKIMUNE·Filed 2008·Granted Jun 23, 2015·5 cites·14 claims
- 0567US9882010B2Silicon carbide substrate and method for producing silicon carbide substrateSEIKO EPSON CORP·Filed 2016·Granted Jan 30, 2018·1 cites·11 claims
- 0665US7947560B2Method of nickel disilicide formation and method of nickel disilicate source/drain formationSEIKO EPSON CORP·Filed 2007·Granted May 24, 2011·2 cites·8 claims
- 0762US8847236B2Semiconductor substrate and semiconductor substrate manufacturing methodSEIKO EPSON CORP·Filed 2013·Granted Sep 30, 2014·1 cites·13 claims
- 0859US9732439B2Method of forming a laminate of epitaxially grown cubic silicon carbide layers, and method of forming a substrate-attached laminate of epitaxially grown cubic silicon carbide layersSEIKO EPSON CORP·Filed 2015·Granted Aug 15, 2017·0 cites·6 claims
- 0955US2012037067A1Cubic silicon carbide film manufacturing method, and cubic silicon carbide film-attached substrate manufacturing methodWATANABE YUKIMUNE·Filed 2011·Application pending·0 cites
- 1047US2019280141A1Photoelectric conversion element, photoelectric conversion module, and electronic deviceSEIKO EPSON CORP·Filed 2019·Application pending·0 cites
- 1143US11404269B2Single crystal substrate with undulating ridges and silicon carbide substrateSEIKO EPSON CORP·Filed 2018·Granted Aug 2, 2022·0 cites·11 claims
- 1242US9758902B2Method for producing 3C-SiC epitaxial layer, 3C-SiC epitaxial substrate, and semiconductor deviceSEIKO EPSON CORP·Filed 2014·Granted Sep 12, 2017·0 cites·2 claims
- 1341US9536954B2Substrate with silicon carbide film, semiconductor device, and method for producing substrate with silicon carbide filmSEIKO EPSON CORP·Filed 2015·Granted Jan 3, 2017·0 cites·14 claims
- 1440US8986464B2Semiconductor substrate and method for producing semiconductor substrateWATANABE YUKIMUNE·Filed 2012·Granted Mar 24, 2015·0 cites·9 claims
- 1540US2008067590A1Semiconductor device and manufacturing method of the sameNAT INST OF ADVANCED IND SCIEN·Filed 2007·Application pending·0 cites
- 1638US11142821B2Method for producing single crystal substrate having a plurality of grooves using a pair of masksSEIKO EPSON CORP·Filed 2018·Granted Oct 12, 2021·0 cites·1 claims
- 1738US9362368B2Substrate with silicon carbide film, method for producing substrate with silicon carbide film, and semiconductor deviceSEIKO EPSON CORP·Filed 2015·Granted Jun 7, 2016·0 cites·19 claims
- 1838US2006281273A1Semiconductor device and manufacturing method of the semiconductor deviceRENESAS TECH CORP·Filed 2006·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →