Cubic silicon carbide film manufacturing method, and cubic silicon carbide film-attached substrate manufacturing method

Abstract

A method for manufacturing a cubic silicon carbide film includes: a first step of introducing a carbon-containing gas onto a silicon substrate and rapidly heating the silicon substrate to an epitaxial growth temperature of cubic silicon carbide so as to carbonize a surface of the silicon substrate and form a cubic silicon carbide film; and a second step of introducing a carbon-containing gas and a silicon-containing gas onto the cubic silicon carbide film while maintaining the cubic silicon carbide film at the epitaxial growth temperature of cubic silicon carbide, so as to allow further epitaxial growth of the cubic silicon carbide film.

What is claimed is: 
     
         1 . A method of manufacturing a cubic silicon carbide film, comprising:
 introducing a first gas that contains carbon onto a silicon substrate or onto a monocrystalline silicon film disposed on the substrate,   forming a first cubic silicon carbide film by heating the silicon substrate or the monocrystalline silicon film to an epitaxial growth temperature of cubic silicon carbide so as to carbonize a surface of the silicon substrate or the monocrystalline silicon film; and   forming a second cubic carbide film by introducing the first gas that contains carbon and a second gas that contains silicon onto the first cubic silicon carbide film while maintaining the first cubic silicon carbide film at the epitaxial growth temperature of cubic silicon carbide so as to perform further epitaxial growth of cubic silicon carbide film.   
     
     
         2 . The method according to  claim 1 , further comprising:
 forming a monocrystalline silicon film on the second cubic silicon carbide film by introducing the second gas that contains silicon onto the second cubic silicon carbide film, a temperature of the second cubic silicon carbide film being set to the epitaxial growth temperature of monocrystalline silicon;   after the forming the monocrystalline silicon on the second cubic silicon carbide film, introducing the first gas that contains the carbon;   forming a third cubic silicon carbide film by heating the monocrystalline silicon film to an epitaxial growth temperature of cubic silicon carbide so as to carbonize a surface of the monocrystalline silicon film; and   forming a fourth cubic carbide film by introducing the first gas that contains the carbon and the second gas that contains silicon onto the third cubic silicon carbide film while maintaining the third cubic silicon carbide film at the epitaxial growth temperature of cubic silicon carbide so as to perform further epitaxial growth of the cubic silicon carbide film.   
     
     
         3 . The method according to  claim 1 ,
 a rate of temperature rising of the heating being in a range of 5° C./sec to 200° C./sec.   
     
     
         4 . The method according to  claim 1 ,
 switching of the first gas and the second gas being performed by controlling a flow rate of the first gas and a flow rate of the second gas.   
     
     
         5 . The method according to  claim 1 ,
 the first gas containing hydrocarbon.   
     
     
         6 . The method according to  claim 1 ,
 the second gas containing silane.   
     
     
         7 . A method of manufacturing a substrate including cubic silicon carbide film the method comprising:
 introducing a first gas that contains carbon onto a silicon substrate or onto a monocrystalline silicon film disposed on the substrate,   forming a first cubic silicon carbide film by heating the silicon substrate or the monocrystalline silicon film to an epitaxial growth temperature of cubic silicon carbide so as to carbonize a surface of the silicon substrate or the monocrystalline silicon film; and   forming a second cubic carbide film by introducing the first gas that contains carbon and the second gas that contains silicon onto the first cubic silicon carbide film while maintaining the first cubic silicon carbide film at the epitaxial growth temperature of cubic silicon carbide so as to perform further epitaxial growth of cubic silicon carbide film.   
     
     
         8 . The method according to  claim 7 , further comprising:
 forming a monocrystalline silicon film on the second cubic silicon carbide film by introducing a second gas that contains silicon onto the second cubic silicon carbide film, a temperature of the second cubic silicon carbide film being set to the epitaxial growth temperature of monocrystalline silicon;
 after the forming the monocrystalline silicon on the second cubic silicon carbide film, introducing the first gas that contains the carbon; 
 forming a third cubic silicon carbide film by heating the monocrystalline silicon film to an epitaxial growth temperature of cubic silicon carbide so as to carbonize a surface of the monocrystalline silicon film; and 
 forming a fourth cubic carbide film by introducing the first gas that contains the carbon and the second gas that contains the silicon onto the third cubic silicon carbide film while maintaining the third cubic silicon carbide film at the epitaxial growth temperature of cubic silicon carbide so as to perform further epitaxial growth of the cubic silicon carbide film.