Inventor · disambiguated record
Yukihiko Watanabe
Also filed as: WATANABE YUKIHIKO
54 granted patents·19 pending applications·152 citations·filing 1992–2024
97Inventor score
Top patents by PatentIndex Score
73 records- 0195US9136372B2Silicon carbide semiconductor deviceMIYAHARA SHINICHIRO·Filed 2012·Granted Sep 15, 2015·37 cites·1 claims
- 0291US8440524B2Semiconductor device manufacturing methodFUJIWARA HIROKAZU·Filed 2011·Granted May 14, 2013·14 cites·15 claims
- 0387US9818860B2Silicon carbide semiconductor device and method for producing the sameDENSO CORP·Filed 2016·Granted Nov 14, 2017·4 cites·6 claims
- 0486US12324187B2Switching elementDENSO CORP·Filed 2022·Granted Jun 3, 2025·1 cites·3 claims
- 0585US8748975B2Switching element and manufacturing method thereofFUJIWARA HIROKAZU·Filed 2012·Granted Jun 10, 2014·7 cites·9 claims
- 0682US9793376B2Silicon carbide semiconductor device and method of manufacturing the sameDENSO CORP·Filed 2013·Granted Oct 17, 2017·5 cites·5 claims
- 0782US9647108B2Silicon carbide semiconductor deviceDENSO CORP·Filed 2014·Granted May 9, 2017·6 cites·8 claims
- 0881US9543428B2Silicon carbide semiconductor device and method for producing the sameDENSO CORP·Filed 2013·Granted Jan 10, 2017·4 cites·13 claims
- 0981US8575689B2Silicon carbide semiconductor device and manufacturing method of the sameMIMURA TOMOHIRO·Filed 2011·Granted Nov 5, 2013·9 cites·3 claims
- 1080US9337298B2Silicon carbide semiconductor device and method for producing the sameDENSO CORP·Filed 2013·Granted May 10, 2016·4 cites·6 claims
- 1179US8334541B2SiC semiconductor deviceMIYAHARA SHINICHIRO·Filed 2011·Granted Dec 18, 2012·6 cites·10 claims
- 1278US10516046B2Silicon carbide semiconductor deviceDENSO CORP·Filed 2019·Granted Dec 24, 2019·2 cites·11 claims
- 1377US10734515B2Silicon carbide semiconductor device and manufacturing method thereforDENSO CORP·Filed 2017·Granted Aug 4, 2020·2 cites·9 claims
- 1476US9391190B2Field effect transistor incorporating a Schottky diodeTOYOTA MOTOR CO LTD·Filed 2014·Granted Jul 12, 2016·4 cites·2 claims
- 1576US8618555B2Silicon carbide semiconductor device and method of manufacturing the sameSUZUKI NAOHIRO·Filed 2011·Granted Dec 31, 2013·5 cites·11 claims
- 1676US8470672B2Method of manufacturing silicon carbide semiconductor deviceENDO TAKESHI·Filed 2011·Granted Jun 25, 2013·4 cites·8 claims
- 1776US2025107166A1Semiconductor device and manufacturing method of semiconductor deviceDENSO CORP·Filed 2024·Application pending·0 cites
- 1875US9780205B2Insulated gate type semiconductor device having floating regions at bottom of trenches in cell region and circumferential region and manufacturing method thereofSAITO JUN·Filed 2014·Granted Oct 3, 2017·3 cites·6 claims
- 1974US10170470B2Switching deviceTOYOTA MOTOR CO LTD·Filed 2017·Granted Jan 1, 2019·2 cites·5 claims
- 2073US9219142B2Semiconductor device having element region and termination region surrounding element regionTOYOTA MOTOR CO LTD·Filed 2014·Granted Dec 22, 2015·3 cites·12 claims
- 2173US8492867B2Semiconductor device including cell region and peripheral region having high breakdown voltage structureYAMAMOTO KENSAKU·Filed 2011·Granted Jul 23, 2013·4 cites·15 claims
- 2272US8324704B2Silicon carbide semiconductor device with Schottky barrier diode and method of manufacturing the sameYAMAMOTO TAKEO·Filed 2010·Granted Dec 4, 2012·3 cites·5 claims
- 2367US9911803B2Semiconductor deviceTOYOTA MOTOR CO LTD·Filed 2014·Granted Mar 6, 2018·2 cites·9 claims
- 2467US9024330B2Semiconductor device and manufacturing method thereofWATANABE YUKIHIKO·Filed 2013·Granted May 5, 2015·3 cites·4 claims
- 2566US9853141B2Semiconductor device with front and rear surface electrodes on a substrate having element and circumferential regions, an insulating gate type switching element in the element region being configured to switch between the front and rear surface electrodesSAITO JUN·Filed 2014·Granted Dec 26, 2017·2 cites·2 claims
- 2666US9214526B2Semiconductor deviceTOYOTA MOTOR CO LTD·Filed 2014·Granted Dec 15, 2015·2 cites·9 claims
- 2766US8525223B2Silicon carbide semiconductor deviceWATANABE HIROKI·Filed 2012·Granted Sep 3, 2013·2 cites·7 claims
- 2865US9865723B2Switching deviceTOYOTA MOTOR CO LTD·Filed 2017·Granted Jan 9, 2018·1 cites·3 claims
- 2963US12471312B2Switching elementDENSO CORP·Filed 2022·Granted Nov 11, 2025·0 cites·3 claims
- 3063US12205983B2Semiconductor device and manufacturing method of semiconductor deviceDENSO CORP·Filed 2021·Granted Jan 21, 2025·0 cites·6 claims
- 3163US9825123B2Schottky barrier diode and method for manufacturing the sameTOYOTA MOTOR CO LTD·Filed 2015·Granted Nov 21, 2017·1 cites·7 claims
- 3263US9660046B2Method of manufacturing semiconductor deviceTOYOTA CHUO KENKYUSHO KK·Filed 2014·Granted May 23, 2017·1 cites·8 claims
- 3362US9673288B2Silicon carbide semiconductor device including conductivity layer in trenchDENSO CORP·Filed 2013·Granted Jun 6, 2017·1 cites·10 claims
- 3462US8975139B2Manufacturing method of silicon carbide semiconductor deviceMIYAHARA SHINICHIRO·Filed 2012·Granted Mar 10, 2015·1 cites·17 claims
- 3561US9640651B2Semiconductor device and method of manufacturing semiconductor deviceTAKAYA HIDEFUMI·Filed 2014·Granted May 2, 2017·1 cites·7 claims
- 3661US8168485B2Semiconductor device making methodENDO TAKESHI·Filed 2009·Granted May 1, 2012·2 cites·19 claims
- 3760US10446649B2Silicon carbide semiconductor deviceDENSO CORP·Filed 2013·Granted Oct 15, 2019·1 cites·19 claims
- 3856US2023420523A1Semiconductor deviceDENSO CORP·Filed 2023·Application pending·0 cites
- 3955US7796442B2Nonvolatile semiconductor memory device and method of erasing and programming the sameDENSO CORP·Filed 2008·Granted Sep 14, 2010·1 cites·11 claims
- 4050US12205984B2Semiconductor device with surface and deep guard ringsDENSO CORP·Filed 2022·Granted Jan 21, 2025·0 cites·4 claims
- 4148US9515160B2Silicon carbide semiconductor device and method for producing the sameDENSO CORP·Filed 2016·Granted Dec 6, 2016·0 cites·7 claims
- 4246US11387326B2Silicon carbide semiconductor device and method for manufacturing the sameDENSO CORP·Filed 2020·Granted Jul 12, 2022·0 cites·17 claims
- 4344US10020390B2Semiconductor device and semiconductor device manufacturing methodSAITO JUN·Filed 2014·Granted Jul 10, 2018·0 cites·9 claims
- 4444US2017040441A1Vertical semiconductor deviceTOYOTA CHUO KENKYUSHO KK·Filed 2014·Application pending·0 cites
- 4543US11233147B2Semiconductor deviceDENSO CORP·Filed 2020·Granted Jan 25, 2022·0 cites·7 claims
- 4643US2009224353A1DiodeDENSO CORP·Filed 2009·Application pending·0 cites
- 4743US2009230405A1Diode having Schottky junction and PN junction and method for manufacturing the sameDENSO CORP·Filed 2009·Application pending·0 cites
- 4842US10153345B2Insulated gate switching device and method for manufacturing the sameTOYOTA MOTOR CO LTD·Filed 2016·Granted Dec 11, 2018·0 cites·7 claims
- 4942US9276075B2Semiconductor device having vertical MOSFET structure that utilizes a trench-type gate electrode and method of producing the sameTAKAYA HIDEFUMI·Filed 2012·Granted Mar 1, 2016·0 cites·7 claims
- 5042US8518809B2Manufacturing method of silicon carbide single crystalWATANABE HIROKI·Filed 2011·Granted Aug 27, 2013·0 cites·18 claims
Showing the top 50 of 73 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →